非对称自级联码与梯度通道SOI nmosfet的跨电容比较分析

2022 IEEE Latin American Electron Devices Conference (LAEDC) Pub Date : 2022-07-04 DOI:10.1109/LAEDC54796.2022.9907771

C. Alves, L. d'Oliveira, M. de Souza

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引用次数: 0

摘要

本文通过二维数值模拟的方法，对非对称自级联码(a - sc)和梯度通道(GC)绝缘体上硅(SOI) nmosfet的跨电容进行了比较研究。仿真结果表明，尽管施加了VDS, ASC SOI器件的栅极漏极电容比GC SOI器件小。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Comparative Analysis of Transcapacitances in Asymmetric Self-Cascode and Graded-Channel SOI nMOSFETs

This work presents a comparative study of the transcapacitances of asymmetric self-cascode (A-SC) and graded-channel (GC) silicon-on-insulator (SOI) nMOSFETs, by means of two-dimensional numerical simulations. Simulated results show that the gate-to-drain capacitance is smaller for the ASC SOI device if compared to the GC SOI device, despite of the applied VDS.

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2022 IEEE Latin American Electron Devices Conference (LAEDC)

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