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2022 IEEE Latin American Electron Devices Conference (LAEDC)最新文献

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Effect of Negative Back Bias on FD-SOI Device Parameters down to Cryogenic Temperature 负背偏置对FD-SOI器件低温参数的影响
2022 IEEE Latin American Electron Devices Conference (LAEDC) Pub Date : 2022-07-04 DOI: 10.1109/LAEDC54796.2022.9908200
Anuj Bhardwaj, S. K. Singh, A. Mishra, D. Petit, Francois Paolini, A. Dixit
{"title":"Effect of Negative Back Bias on FD-SOI Device Parameters down to Cryogenic Temperature","authors":"Anuj Bhardwaj, S. K. Singh, A. Mishra, D. Petit, Francois Paolini, A. Dixit","doi":"10.1109/LAEDC54796.2022.9908200","DOIUrl":"https://doi.org/10.1109/LAEDC54796.2022.9908200","url":null,"abstract":"In this work, we aim to present the effect of negative back bias on various device parameters down to cryogenic temperatures. We have performed wafer-level DC measurements on a RVT (Regular Voltage Threshold) short channel n-type and p-type ultra-thin body ultra-thin buried oxide (UTBB) FD-SOI MOSFETs with different geometries across temperatures ranging from 300K down to 10K. Our analysis shows that while the threshold voltage behavior is aligned with the theoretical expectation, the subthreshold slope behavior with back bias is counter intuitive. With this work, we are trying to address the origin of the same to contribute towards the understanding of cryogenic CMOS behavior.","PeriodicalId":276855,"journal":{"name":"2022 IEEE Latin American Electron Devices Conference (LAEDC)","volume":"46 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-07-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127069111","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Field-Effect Transistors as THz radiation detectors 场效应晶体管作为太赫兹辐射探测器
2022 IEEE Latin American Electron Devices Conference (LAEDC) Pub Date : 2022-07-04 DOI: 10.1109/LAEDC54796.2022.9908179
D. Tomaszewski, M. Zaborowski, J. Marczewski, K. Kucharski, P. Bajurko
{"title":"Field-Effect Transistors as THz radiation detectors","authors":"D. Tomaszewski, M. Zaborowski, J. Marczewski, K. Kucharski, P. Bajurko","doi":"10.1109/LAEDC54796.2022.9908179","DOIUrl":"https://doi.org/10.1109/LAEDC54796.2022.9908179","url":null,"abstract":"The paper presents our works on the measurement and characterization of two types of field-effect transistors (FETs) used for efficient detection of THz radiation: standard MOSFETs manufactured in a CMOS process on Si and SOI substrates and junctionless field-effect transistors (JLFETs) on SOI wafers. Based on the measurement results, we critically review and discuss the validity of the existing models: plasmonic and resistive mixing. The conclusions open space for further studies on the THz detection mechanism and on modeling this effect.","PeriodicalId":276855,"journal":{"name":"2022 IEEE Latin American Electron Devices Conference (LAEDC)","volume":"526 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-07-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127066618","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
The Flipped Voltage Follower as a Super-Regenerative Receiver for Internet of Medical Things 翻转电压跟随器作为医疗物联网的超再生接收器
2022 IEEE Latin American Electron Devices Conference (LAEDC) Pub Date : 2022-07-04 DOI: 10.1109/LAEDC54796.2022.9908228
Aldair Lara Tenorio, Jorge Arturo Rodriguez Sánchez, Francisco Javier Martinez, A. Bautista-Castillo, José Miguel Rocha Pérez
{"title":"The Flipped Voltage Follower as a Super-Regenerative Receiver for Internet of Medical Things","authors":"Aldair Lara Tenorio, Jorge Arturo Rodriguez Sánchez, Francisco Javier Martinez, A. Bautista-Castillo, José Miguel Rocha Pérez","doi":"10.1109/LAEDC54796.2022.9908228","DOIUrl":"https://doi.org/10.1109/LAEDC54796.2022.9908228","url":null,"abstract":"Super-Regenerative Receiver (SRR) is an ultra-low-power RF Transceiver for low-data rate applications. This paper present the synthesis and design of a SRR. With the SRR, it is possible to reach low power consumption performance. The circuit was designed by using TSMC 180nm Mixed Mode/RF CMOS technology. According to the performance exhibited by the proposed SRR, it may be useful in narrow-band short-range communication technologies, such as Wireless Body Area Network (WBAN).","PeriodicalId":276855,"journal":{"name":"2022 IEEE Latin American Electron Devices Conference (LAEDC)","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-07-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115515010","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Study of the resistive switching behavior in Si/N:SiOx (x<2) multilayer-based MOS devices Si/N:SiOx (x<2)多层MOS器件的阻性开关行为研究
2022 IEEE Latin American Electron Devices Conference (LAEDC) Pub Date : 2022-07-04 DOI: 10.1109/LAEDC54796.2022.9908211
B. Palacios–Márquez, Z. Montiel-González, S. Pérez-García, M. Moreno, A. Morales-Sánchez
{"title":"Study of the resistive switching behavior in Si/N:SiOx (x<2) multilayer-based MOS devices","authors":"B. Palacios–Márquez, Z. Montiel-González, S. Pérez-García, M. Moreno, A. Morales-Sánchez","doi":"10.1109/LAEDC54796.2022.9908211","DOIUrl":"https://doi.org/10.1109/LAEDC54796.2022.9908211","url":null,"abstract":"This work studies the resistive switching properties in Si/N:SiOx (x<2) multilayer (ML) structures. The thickness of Si layers was kept constant (4 nm) while the thickness of the N:SiOx layer was changed from 2 to 6 nm to obtain three different MLs labeled as L42, L44 and L46, respectively. In this MLs, Si nanocrystals (Si-ncs) isolated by N:SiOx are formed after a thermal annealing process. All MLs exhibit the electroforming process (SET, ON) at forward bias. However, only the L42 ML was able to obtain the RESET (OFF) process allowing the resistive switching between high and low resistance states. ON/OFF ratios of about 10E9 were obtained with SET and RESET voltages below 5V. Moreover, the LRS in the L42 ML was also activated with light.","PeriodicalId":276855,"journal":{"name":"2022 IEEE Latin American Electron Devices Conference (LAEDC)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-07-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115520745","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Post-CMOS Devices: Landau’s Anisotropy Sensitivity Analyses for Organic Ferroelectric Gate Stack and Its Application to NCTFET 后cmos器件:有机铁电栅极堆的Landau各向异性灵敏度分析及其在NCTFET中的应用
2022 IEEE Latin American Electron Devices Conference (LAEDC) Pub Date : 2022-07-04 DOI: 10.1109/LAEDC54796.2022.9908182
Khoirom Johnson Singh, Lomash Chandra Acharya, Mahipal Dargupally, A. Bulusu, Sudeb Dasgupta
{"title":"Post-CMOS Devices: Landau’s Anisotropy Sensitivity Analyses for Organic Ferroelectric Gate Stack and Its Application to NCTFET","authors":"Khoirom Johnson Singh, Lomash Chandra Acharya, Mahipal Dargupally, A. Bulusu, Sudeb Dasgupta","doi":"10.1109/LAEDC54796.2022.9908182","DOIUrl":"https://doi.org/10.1109/LAEDC54796.2022.9908182","url":null,"abstract":"This study aims to offer a generic simulation framework for metal/organic ferroelectric/metal (M/OFE/M) devices using Ginzburg-Landau-Khalatnikov (GLK) model for post-CMOS ultralow voltage applications. The M/OFE/M device with and without the external resistor (R) is simulated within the Synopsys© technology computer-aided design (TCAD) environment. The OFE material poly(vinylidene fluoride-co-trifluoroethylene) [P(VDF-TrFE)] is modeled as an ad-hoc OFE material in the TCAD material library because it is not yet included in the standard TCAD material library. The significance of the GLK model in harnessing the negative capacitance (NC) effect at an ultralow voltage (VG = 0.5 V) over the conventional Preisach model is discussed briefly. Moreover, the sensitivity analyses on quasistatic and non-quasistatic M/OFE/M devices with 10 nm OFE to the anisotropy constants, switching resistivity, and OFE thickness within 10% to 20% of the benchmark values are investigated. Our simulation findings show that: P(VDF-TrFE)’s coercivity is reduced by 84.89% with respect to its HfZrO counterpart; the speed of the occurrence of the NC effect is closely related to the input signal rising time and switching resistivity offered by the OFE; the total switched charge density of the proposed M/OFE/M is almost comparable to the channel charge density of a CMOS transistor. Finally, this study suggests an OFE-NC tunnel field-effect transistor as a potential post-CMOS transistor with a minimum subthreshold swing of 14.17 mV/decade, which is significantly steeper than the fundamental thermionic constraint of 60 mV/decade in CMOS.","PeriodicalId":276855,"journal":{"name":"2022 IEEE Latin American Electron Devices Conference (LAEDC)","volume":"47 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-07-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133445977","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Simulation of Single-shot Qubit Readout of a 2-Qubit Superconducting System with Noise Analysis 含噪声分析的2量子位超导系统单次量子位读出仿真
2022 IEEE Latin American Electron Devices Conference (LAEDC) Pub Date : 2022-07-04 DOI: 10.1109/LAEDC54796.2022.9908196
Harsaroop Dhillon, Y. Rosen, K. Beck, H. Wong
{"title":"Simulation of Single-shot Qubit Readout of a 2-Qubit Superconducting System with Noise Analysis","authors":"Harsaroop Dhillon, Y. Rosen, K. Beck, H. Wong","doi":"10.1109/LAEDC54796.2022.9908196","DOIUrl":"https://doi.org/10.1109/LAEDC54796.2022.9908196","url":null,"abstract":"It is desirable to reduce the readout time in a quantum computer so that more operations can be performed before decoherence occurs. In this paper, we propose and study a novel readout scheme of two qubits through simulations with a calibrated noise model. Two resonators with resonant frequencies only ~5MHz apart are designed and coupled to two superconducting qubits, respectively. A single shot readout is performed using one single frequency pulse to read the states of the two qubits. This has the potential to increase the number of qubits for a given bandwidth. The simulator used is written in Matlab which takes S21 calculated by Ansys HFSS as inputs. The know-how of performing repeatable and accurate simulations in HFSS is also discussed.","PeriodicalId":276855,"journal":{"name":"2022 IEEE Latin American Electron Devices Conference (LAEDC)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-07-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121197032","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
A Contribution to GaN HEMT Modeling and Parameter Extraction Including Temperature Dependence 氮化镓HEMT模型和包括温度依赖的参数提取的贡献
2022 IEEE Latin American Electron Devices Conference (LAEDC) Pub Date : 2022-07-04 DOI: 10.1109/LAEDC54796.2022.9908184
Loukas Chevas, N. Makris, M. Kayambaki, A. Kostopoulos, A. Stavrinidis, G. Konstantinidis, M. Bucher
{"title":"A Contribution to GaN HEMT Modeling and Parameter Extraction Including Temperature Dependence","authors":"Loukas Chevas, N. Makris, M. Kayambaki, A. Kostopoulos, A. Stavrinidis, G. Konstantinidis, M. Bucher","doi":"10.1109/LAEDC54796.2022.9908184","DOIUrl":"https://doi.org/10.1109/LAEDC54796.2022.9908184","url":null,"abstract":"The increased usage of high electron mobility transistors (HEMTs), especially using GaN, for a large range of applications demands for efficient circuit design models. The paper discusses the procedures for determining key parameters of a physics-based HEMT model for circuit design. HEMTs using AlGaN/GaN epitaxy on Si substrate fabricated at IESL-FORTH are used. Basic parameters such as barrier capacitance, threshold voltage, slope factor, and mobility are determined from experimental characteristics over a large range of temperature. It is shown that the behavior of HEMTs, in terms of transconductance efficiency, is in many ways similar to that of MOSFETs.","PeriodicalId":276855,"journal":{"name":"2022 IEEE Latin American Electron Devices Conference (LAEDC)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-07-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123510386","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Algorithm for ECG Signal Delineation through Delta-Sigma Modulation Delta-Sigma调制心电信号圈定算法
2022 IEEE Latin American Electron Devices Conference (LAEDC) Pub Date : 2022-07-04 DOI: 10.1109/LAEDC54796.2022.9907766
Luis A. Esperanza-Hernandez, V. R. González-Díaz
{"title":"Algorithm for ECG Signal Delineation through Delta-Sigma Modulation","authors":"Luis A. Esperanza-Hernandez, V. R. González-Díaz","doi":"10.1109/LAEDC54796.2022.9907766","DOIUrl":"https://doi.org/10.1109/LAEDC54796.2022.9907766","url":null,"abstract":"This manuscript reports the operation of a new algorithm for the fiducial points extraction from an electrocardiogram signal. The algorithm analyzes the Delta-sigma modulated slope of the ECG using a set of counters and thresholds to locate characteristic patterns of a specific wave. The algorithm successfully processes recordings from the QT database achieving a 99.57% detection accuracy for the R peak, 99.51% for the P wave, and 97.85% for the T wave.","PeriodicalId":276855,"journal":{"name":"2022 IEEE Latin American Electron Devices Conference (LAEDC)","volume":"118 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-07-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128127067","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Numerical Modeling of Organic Electrochemical Transistors 有机电化学晶体管的数值模拟
2022 IEEE Latin American Electron Devices Conference (LAEDC) Pub Date : 2022-07-04 DOI: 10.1109/LAEDC54796.2022.9908245
Malte Koch, Hsin-Hsien Tseng, Anton Weissbach, B. Iñíguez, K. Leo, A. Kloes, H. Kleemann, G. Darbandy
{"title":"Numerical Modeling of Organic Electrochemical Transistors","authors":"Malte Koch, Hsin-Hsien Tseng, Anton Weissbach, B. Iñíguez, K. Leo, A. Kloes, H. Kleemann, G. Darbandy","doi":"10.1109/LAEDC54796.2022.9908245","DOIUrl":"https://doi.org/10.1109/LAEDC54796.2022.9908245","url":null,"abstract":"Organic electrochemical transistors (OECTs) are of significant research interest as building blocks for the realization of synaptic behavior, bioelectronics, and neuromorphic applications. This work presents a numerical method considering the Poisson-Boltzmann statistics to reproduce associated charge densities and distributions depending on pH values as well as the electrolyte behavior, thus enabling numerical modeling and TCAD simulation of OECTs. We have fabricated and characterized OECTs based on PEDOT:PSS as a channel material. The proposed model does not take non-faradaic processes into account, but yet it reveals important properties of the device working mechanism and shows a good agreement with the measured data of OECTs.","PeriodicalId":276855,"journal":{"name":"2022 IEEE Latin American Electron Devices Conference (LAEDC)","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-07-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127048995","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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