发布求助
文献互助 智能选刊 最新文献

2022 IEEE Latin American Electron Devices Conference (LAEDC)最新文献

筛选
英文 中文
Approaching the GHz-Threshold with Organic Permeable Base Transistors 利用有机可渗透基极晶体管逼近ghz阈值
2022 IEEE Latin American Electron Devices Conference (LAEDC) Pub Date : 2022-07-04 DOI: 10.1109/LAEDC54796.2022.9908235
H. Kleemann, A. Bonil, Juan Wang, G. Darbandy
{"title":"Approaching the GHz-Threshold with Organic Permeable Base Transistors","authors":"H. Kleemann, A. Bonil, Juan Wang, G. Darbandy","doi":"10.1109/LAEDC54796.2022.9908235","DOIUrl":"https://doi.org/10.1109/LAEDC54796.2022.9908235","url":null,"abstract":"The vision of flexible electronics based on organic semiconductors is to enable lightweight, cost-effective, power-efficient, and versatile electronic devices that can support people in any aspect of life. However, horizontal transistor configurations face severe contact resistance and device integration challenges when targeting short-channel geometries, required to reach device operation above 100 MHz. Here we discuss the idea of employing vertical organic transistors - a structure that holds great promise for high-frequency applications as the channel length is defined only by the thicknesses of the layers in these devices (as low as 100 nm). As an archetype device, we focus on so-called organic permeable base transistors to explain the device physics and scaling laws of vertical organic transistors.","PeriodicalId":276855,"journal":{"name":"2022 IEEE Latin American Electron Devices Conference (LAEDC)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-07-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114533171","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Temperature Dependence of AlGaN/GaN High Electron Mobility Transistors on 200 mm Si wafers 200mm硅片上AlGaN/GaN高电子迁移率晶体管的温度依赖性
2022 IEEE Latin American Electron Devices Conference (LAEDC) Pub Date : 2022-07-04 DOI: 10.1109/LAEDC54796.2022.9908239
Braz Baptista Júnior, M. G. C. de Andrade, Luis Felipe de Oliveira Bergamim, Carlos Roberto Nogueira, Renan Baptista Abud, E. Simoen
{"title":"Temperature Dependence of AlGaN/GaN High Electron Mobility Transistors on 200 mm Si wafers","authors":"Braz Baptista Júnior, M. G. C. de Andrade, Luis Felipe de Oliveira Bergamim, Carlos Roberto Nogueira, Renan Baptista Abud, E. Simoen","doi":"10.1109/LAEDC54796.2022.9908239","DOIUrl":"https://doi.org/10.1109/LAEDC54796.2022.9908239","url":null,"abstract":"In this paper, the temperature dependence of AlGaN/GaN High Electron Mobility Transistors (HEMTs) on silicon substrates is studied experimentally. Drain current (ID), transconductance (gm), threshold voltage (VT) and drain-induced barrier lowering (DIBL) were analyzed in the temperature range from −35°C to 200°C. In addition, gate current (IG) and subthreshold slope (SS) were also analyzed in order to understand the physical mechanisms involved. The results indicate that gate current increases with increasing temperature. Also, as the gate current (IG) increases, the drain current (ID) decreases. The characteristics of AlGaN/GaN HEMTs on silicon substrates indicate that they may be a promising candidate for analog and radio frequency (RF) applications.","PeriodicalId":276855,"journal":{"name":"2022 IEEE Latin American Electron Devices Conference (LAEDC)","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-07-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114675576","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Extraction of the Back Channel Mobility in SOI Nanowire MOS Transistors under Substrate Biasing 衬底偏置条件下SOI纳米线MOS晶体管的后通道迁移率提取
2022 IEEE Latin American Electron Devices Conference (LAEDC) Pub Date : 2022-07-04 DOI: 10.1109/LAEDC54796.2022.9908214
F. Bergamaschi, G. Wirth, S. Barraud, M. Cassé, M. Vinet, O. Faynot, M. Pavanello
{"title":"Extraction of the Back Channel Mobility in SOI Nanowire MOS Transistors under Substrate Biasing","authors":"F. Bergamaschi, G. Wirth, S. Barraud, M. Cassé, M. Vinet, O. Faynot, M. Pavanello","doi":"10.1109/LAEDC54796.2022.9908214","DOIUrl":"https://doi.org/10.1109/LAEDC54796.2022.9908214","url":null,"abstract":"In this work, an analysis of the effective mobility of SOI nanowire MOS transistors is performed by separating the mobility of electrons in the back channel, which is created when substrate bias is applied. Measurements are done in n-type devices with an Ω-gate structure and variable channel length. Both longer and shorter channel devices present higher mobility in the back channel, but strong mobility reduction is observed with the increase of the substrate bias, reaching values close to that of the front channel at strong back bias levels. This effect is independent of the applied gate voltage overdrive. Three-dimensional TCAD simulation validates the method used to separate the back channel mobility, showing that the front channel mobility is not changed by the increase in substrate bias.","PeriodicalId":276855,"journal":{"name":"2022 IEEE Latin American Electron Devices Conference (LAEDC)","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-07-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121611421","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Ultra-Low-Power Diodes Composed by SOI UTBB Transistors 由SOI UTBB晶体管组成的超低功率二极管
2022 IEEE Latin American Electron Devices Conference (LAEDC) Pub Date : 2022-07-04 DOI: 10.1109/LAEDC54796.2022.9908183
F. Costa, R. Trevisoli, R. Doria
{"title":"Ultra-Low-Power Diodes Composed by SOI UTBB Transistors","authors":"F. Costa, R. Trevisoli, R. Doria","doi":"10.1109/LAEDC54796.2022.9908183","DOIUrl":"https://doi.org/10.1109/LAEDC54796.2022.9908183","url":null,"abstract":"The main objective of this work is to present an analysis of the performance of Ultra-Thin-Body and Buried Oxide transistors working as Ultra-Low-Power diodes. The implementation of different ground planes and substrate biases are analyzed. It is shown a reduced leakage current and increased ratio between the on and off-state currents for the Ultra-Low-Power diode with the N-substrate biased at −2V. However, this condition results in increased threshold voltage. The ground planes do not provoke a significant change in the leakage current, but a noticeable variation can be observed in the ratio between the on and off-state currents due to the higher threshold voltage in relation to the system without ground plane.","PeriodicalId":276855,"journal":{"name":"2022 IEEE Latin American Electron Devices Conference (LAEDC)","volume":"83 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-07-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127505696","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Evaluation of the influence of hydrogen-dilution ratio and doping on the properties of a-SiGe:H films 氢稀释比和掺杂对a-SiGe:H薄膜性能影响的评价
2022 IEEE Latin American Electron Devices Conference (LAEDC) Pub Date : 2022-07-04 DOI: 10.1109/LAEDC54796.2022.9908236
C. Ascencio-Hurtado, Alfonso Torres, R. Ambrosio, M. Moreno, Alba Arenas-Hernandez
{"title":"Evaluation of the influence of hydrogen-dilution ratio and doping on the properties of a-SiGe:H films","authors":"C. Ascencio-Hurtado, Alfonso Torres, R. Ambrosio, M. Moreno, Alba Arenas-Hernandez","doi":"10.1109/LAEDC54796.2022.9908236","DOIUrl":"https://doi.org/10.1109/LAEDC54796.2022.9908236","url":null,"abstract":"The influence of hydrogen-dilution ratio (R) and phosphorus doping on the electrical and structural properties of a-SiGe:H thin films deposited by PECVD at 200 °C is evaluated. The electrical characterization results showed that a-SiGe:H films possess an optimized resistivity due to doping and the set of deposition conditions, which comes from R with an optimal value. From FTIR analysis, it is found that phosphorus doping promotes the formation of Si–H and Ge–H bonds and reduces the weak Si–Si bonds. While the hydrogen dilution ratio is directly related to the incorporation of Ge in the solid phase. Furthermore, the Raman spectroscopy confirms that every analyzed sample possesses an amorphous phase. In conclusion, hydrogen-dilution ratio and phosphorus doping improved the quality of a-SiGe:H alloy films deposited by low-frequency PECVD at low temperatures. Therefore, a-SiGe:H material with improved properties obtained in this work has a potential application in flexible electronics as an inorganic semiconductor and a solar cell as an emitter.","PeriodicalId":276855,"journal":{"name":"2022 IEEE Latin American Electron Devices Conference (LAEDC)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-07-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129329995","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Sensor readout circuit using AOSTFTs for IGZO (In-Ga-ZnO) sensors 用于IGZO (In-Ga-ZnO)传感器的aostft传感器读出电路
2022 IEEE Latin American Electron Devices Conference (LAEDC) Pub Date : 2022-07-04 DOI: 10.1109/LAEDC54796.2022.9908178
E. Prieto, Luis Abad, A. Cerdeira, M. Estrada, B. Iñíguez
{"title":"Sensor readout circuit using AOSTFTs for IGZO (In-Ga-ZnO) sensors","authors":"E. Prieto, Luis Abad, A. Cerdeira, M. Estrada, B. Iñíguez","doi":"10.1109/LAEDC54796.2022.9908178","DOIUrl":"https://doi.org/10.1109/LAEDC54796.2022.9908178","url":null,"abstract":"In this work, we present two simple readout circuits, using amorphous oxide semiconductor thin film transistor (AOSTFT), to be used with a photoconductivity amorphous semiconductor sensor that detects volatile organic solvent. One circuit uses IGZO TFTs with 5 V operating voltage, and the other uses HIZO TFTs with 3 V operating voltage. The specifics of the circuits are analyzed, and their validation is done by Smartspice simulation. Both readout circuits, with IGZO and HIZO TFTs, have the advantage of the fabrication process compatibility of the sensor and the readout circuit. Another advantage is the possibility of portable applications, due to the reduced operating voltage of 5 V, and even 3 V in the case of HIZO circuit.","PeriodicalId":276855,"journal":{"name":"2022 IEEE Latin American Electron Devices Conference (LAEDC)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-07-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116929538","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Self-consistent Compact Modeling of First- and Third Quadrant I–V behavior in SiC MOSFETs SiC mosfet第一和第三象限I-V行为的自洽紧凑建模
2022 IEEE Latin American Electron Devices Conference (LAEDC) Pub Date : 2022-07-04 DOI: 10.1109/LAEDC54796.2022.9908186
D. Bavi, S. Khandelwal
{"title":"Self-consistent Compact Modeling of First- and Third Quadrant I–V behavior in SiC MOSFETs","authors":"D. Bavi, S. Khandelwal","doi":"10.1109/LAEDC54796.2022.9908186","DOIUrl":"https://doi.org/10.1109/LAEDC54796.2022.9908186","url":null,"abstract":"In this paper, we present a self-consistent accurate model for the current-voltage (I–V) behavior of SiC MOSFETs in the first- and the third quadrant (3Q) of I–V plane. The gate voltage (Vgs) dependence of 3Q operation of SiC MOSFETs is first analyzed with the help of TCAD. It is found that a change in Vg affects the 3Q I–V by affecting the barrier height and current flow paths for the body-diode. For larger Vgs the channel current is also significant in 3Q operation. These effects have been modeled consistently leading to development of physics-based self-consistent model valid in both quadrants of the I-V plane. The developed model shows good agreement to I–V measurements performed on a a commercial SiC MOSFET.","PeriodicalId":276855,"journal":{"name":"2022 IEEE Latin American Electron Devices Conference (LAEDC)","volume":"117 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-07-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117292022","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Circuit Design Flow dedicated to 3D vertical nanowire FET 电路设计流程专门用于3D垂直纳米线场效应管
2022 IEEE Latin American Electron Devices Conference (LAEDC) Pub Date : 2022-07-04 DOI: 10.1109/LAEDC54796.2022.9908233
C. Maneux, C. Mukherjee, M. Deng, Bruno N. Wesling, Lucas Réveil, Z. Stanojević, O. Baumgartner, G. Larrieu, I. O’Connor, A. Poittevin
{"title":"Circuit Design Flow dedicated to 3D vertical nanowire FET","authors":"C. Maneux, C. Mukherjee, M. Deng, Bruno N. Wesling, Lucas Réveil, Z. Stanojević, O. Baumgartner, G. Larrieu, I. O’Connor, A. Poittevin","doi":"10.1109/LAEDC54796.2022.9908233","DOIUrl":"https://doi.org/10.1109/LAEDC54796.2022.9908233","url":null,"abstract":"To continue transistor downscaling beyond lateral 7nm devices, gate-all-around (GAA) junction-less vertical nanowire field effect transistors (VNWFET) represent a promising option. This invited paper presents the circuit design flow based on a vertical junctionless transistor technology. On the basis of state-of-the-art junctionless nanowire transistors (JLNT), DC characterization, compact modelling, EM simulation and parameter extraction are described in details. Using this circuit design flow, a set of innovative 3D circuit architectures are explored.","PeriodicalId":276855,"journal":{"name":"2022 IEEE Latin American Electron Devices Conference (LAEDC)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-07-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128094232","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A Compact HMSIW Coupler Based on Slow Wave Structures 基于慢波结构的紧凑型HMSIW耦合器
2022 IEEE Latin American Electron Devices Conference (LAEDC) Pub Date : 2022-07-04 DOI: 10.1109/LAEDC54796.2022.9908241
Yunfan Peng, Liguo Sun
{"title":"A Compact HMSIW Coupler Based on Slow Wave Structures","authors":"Yunfan Peng, Liguo Sun","doi":"10.1109/LAEDC54796.2022.9908241","DOIUrl":"https://doi.org/10.1109/LAEDC54796.2022.9908241","url":null,"abstract":"A new slow-wave structure is proposed in this article to miniaturize the half mode substrate integrated waveguide (HMSIW). Consequently, SW-HMSIW in this article achieves a reduction about 66.81% of the SIW transverse dimension. Moreover, the phase velocity in HMSIW declines by 66.7% at the wanted frequency, which corresponds to the reduction of the longitudinal dimension. Based on SW-HMSIW, a compact Riblet-type directional coupler for 3-dB coupling is fabricated and measured. The measured S31 is about −3.56 (±0.5) dB at 7.5 GHz covering a fractional bandwidth of 28.32% while the isolation is better than 15 dB. And the area of the coupler is only 0.524λg2.","PeriodicalId":276855,"journal":{"name":"2022 IEEE Latin American Electron Devices Conference (LAEDC)","volume":"47 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-07-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123662770","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Comparison of TiO2 nanoparticles and Fe3O4@TiO2 core-shell nanostructures and their photocatalytic activity TiO2纳米粒子与Fe3O4@TiO2核壳纳米结构的比较及其光催化活性
2022 IEEE Latin American Electron Devices Conference (LAEDC) Pub Date : 2022-07-04 DOI: 10.1109/LAEDC54796.2022.9907775
César de Jesús Alarcón-Hernández, Alba Arenas-Hernandez, A. Garzon-Roman, Carlos Zuniga
{"title":"Comparison of TiO2 nanoparticles and Fe3O4@TiO2 core-shell nanostructures and their photocatalytic activity","authors":"César de Jesús Alarcón-Hernández, Alba Arenas-Hernandez, A. Garzon-Roman, Carlos Zuniga","doi":"10.1109/LAEDC54796.2022.9907775","DOIUrl":"https://doi.org/10.1109/LAEDC54796.2022.9907775","url":null,"abstract":"The catalytic activity is very important in the applications of gas sensors and pollutant degradation because this can increase the reactivity of sensing films and degradation rate. In this paper, we report TiO<inf>2</inf> and Fe<inf>3</inf>O<inf>4</inf> nanoparticles (NP’s) prepared by hydrothermal and coprecipitation methods, respectively, as well as, Fe<inf>3</inf>O<inf>4</inf>@TiO<inf>2</inf> core-shell nanostructures fabricated by the hydrothermal method. The morphological and structural characterization were studied by Scanning Electron Microscopy (SEM), and X-ray diffraction (XRD). TiO<inf>2</inf> nanoparticles (NP’s-TiO<inf>2</inf>) and Fe<inf>3</inf>O<inf>4</inf> core-shell nanostructures were used as catalysts to degrade methylene blue (MB). The results showed that Fe<inf>3</inf>O<inf>4</inf>@TiO<inf>2</inf> core-shell nanostructures have good catalytic performance because of their grainy texture, which increases the active sites.","PeriodicalId":276855,"journal":{"name":"2022 IEEE Latin American Electron Devices Conference (LAEDC)","volume":"194 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-07-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121555625","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
首页 上一页 下一页 尾页
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整，为了账户安全，请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们：info@booksci.cn Book学术提供免费学术资源搜索服务，方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号：604180095
Book学术官方微信