Self-consistent Compact Modeling of First- and Third Quadrant I–V behavior in SiC MOSFETs

Abstract

In this paper, we present a self-consistent accurate model for the current-voltage (I–V) behavior of SiC MOSFETs in the first- and the third quadrant (3Q) of I–V plane. The gate voltage (Vgs) dependence of 3Q operation of SiC MOSFETs is first analyzed with the help of TCAD. It is found that a change in Vg affects the 3Q I–V by affecting the barrier height and current flow paths for the body-diode. For larger Vgs the channel current is also significant in 3Q operation. These effects have been modeled consistently leading to development of physics-based self-consistent model valid in both quadrants of the I-V plane. The developed model shows good agreement to I–V measurements performed on a a commercial SiC MOSFET.