Approaching the GHz-Threshold with Organic Permeable Base Transistors

H. Kleemann, A. Bonil, Juan Wang, G. Darbandy
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引用次数: 0

Abstract

The vision of flexible electronics based on organic semiconductors is to enable lightweight, cost-effective, power-efficient, and versatile electronic devices that can support people in any aspect of life. However, horizontal transistor configurations face severe contact resistance and device integration challenges when targeting short-channel geometries, required to reach device operation above 100 MHz. Here we discuss the idea of employing vertical organic transistors - a structure that holds great promise for high-frequency applications as the channel length is defined only by the thicknesses of the layers in these devices (as low as 100 nm). As an archetype device, we focus on so-called organic permeable base transistors to explain the device physics and scaling laws of vertical organic transistors.
利用有机可渗透基极晶体管逼近ghz阈值
基于有机半导体的柔性电子产品的愿景是实现轻量化,经济高效,节能和多功能的电子设备,可以支持人们生活的任何方面。然而,当瞄准短通道几何形状时,水平晶体管配置面临严重的接触电阻和器件集成挑战,需要达到100 MHz以上的器件工作。在这里,我们讨论了采用垂直有机晶体管的想法——这种结构在高频应用中具有很大的前景,因为通道长度仅由这些器件中的层厚度(低至100纳米)来定义。作为一种原型器件,我们重点介绍了所谓的有机渗透基晶体管,以解释垂直有机晶体管的器件物理和缩放规律。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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