Sensor readout circuit using AOSTFTs for IGZO (In-Ga-ZnO) sensors

E. Prieto, Luis Abad, A. Cerdeira, M. Estrada, B. Iñíguez
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Abstract

In this work, we present two simple readout circuits, using amorphous oxide semiconductor thin film transistor (AOSTFT), to be used with a photoconductivity amorphous semiconductor sensor that detects volatile organic solvent. One circuit uses IGZO TFTs with 5 V operating voltage, and the other uses HIZO TFTs with 3 V operating voltage. The specifics of the circuits are analyzed, and their validation is done by Smartspice simulation. Both readout circuits, with IGZO and HIZO TFTs, have the advantage of the fabrication process compatibility of the sensor and the readout circuit. Another advantage is the possibility of portable applications, due to the reduced operating voltage of 5 V, and even 3 V in the case of HIZO circuit.
用于IGZO (In-Ga-ZnO)传感器的aostft传感器读出电路
在这项工作中,我们提出了两个简单的读出电路,使用非晶氧化物半导体薄膜晶体管(AOSTFT),与光电导非晶半导体传感器一起使用,检测挥发性有机溶剂。一个电路使用工作电压为5v的IGZO tft,另一个电路使用工作电压为3v的HIZO tft。分析了电路的具体特点,并通过Smartspice仿真对其进行了验证。采用IGZO和HIZO tft的读出电路都具有传感器和读出电路制造工艺兼容的优点。另一个优点是便携式应用的可能性,由于降低了5 V的工作电压,甚至在HIZO电路的情况下降低了3 V。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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