Evaluation of the influence of hydrogen-dilution ratio and doping on the properties of a-SiGe:H films

2022 IEEE Latin American Electron Devices Conference (LAEDC) Pub Date : 2022-07-04 DOI:10.1109/LAEDC54796.2022.9908236

C. Ascencio-Hurtado, Alfonso Torres, R. Ambrosio, M. Moreno, Alba Arenas-Hernandez

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引用次数: 1

Abstract

The influence of hydrogen-dilution ratio (R) and phosphorus doping on the electrical and structural properties of a-SiGe:H thin films deposited by PECVD at 200 °C is evaluated. The electrical characterization results showed that a-SiGe:H films possess an optimized resistivity due to doping and the set of deposition conditions, which comes from R with an optimal value. From FTIR analysis, it is found that phosphorus doping promotes the formation of Si–H and Ge–H bonds and reduces the weak Si–Si bonds. While the hydrogen dilution ratio is directly related to the incorporation of Ge in the solid phase. Furthermore, the Raman spectroscopy confirms that every analyzed sample possesses an amorphous phase. In conclusion, hydrogen-dilution ratio and phosphorus doping improved the quality of a-SiGe:H alloy films deposited by low-frequency PECVD at low temperatures. Therefore, a-SiGe:H material with improved properties obtained in this work has a potential application in flexible electronics as an inorganic semiconductor and a solar cell as an emitter.

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氢稀释比和掺杂对a-SiGe:H薄膜性能影响的评价

考察了氢稀释比(R)和磷掺杂对200℃PECVD沉积a-SiGe:H薄膜电学和结构性能的影响。电学表征结果表明，a-SiGe:H薄膜的电阻率由于掺杂和一组沉积条件而达到了最佳，其电阻率来源于R的最优值。FTIR分析发现，磷的掺杂促进了Si-H和Ge-H键的形成，减弱了弱Si-Si键。而氢的稀释率与固相中Ge的掺入有直接关系。此外，拉曼光谱证实了每个分析样品都具有非晶相。综上所述，氢稀释比和磷的掺杂提高了低温下低频PECVD沉积的a-SiGe:H合金薄膜的质量。因此，在本工作中获得的性能得到改善的a- sige:H材料在柔性电子中作为无机半导体和作为发射极的太阳能电池具有潜在的应用前景。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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2022 IEEE Latin American Electron Devices Conference (LAEDC)

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