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Study of the photoresponse of ITO/SiO2/Si/SiO2/Al MIS capacitor structures ITO/SiO2/Si/SiO2/Al MIS电容器结构的光响应研究
2022 IEEE Latin American Electron Devices Conference (LAEDC) Pub Date : 2022-07-04 DOI: 10.1109/LAEDC54796.2022.9908220
J. M. G.-Martinez, K. González-Flores, Paulo Braulio, M. Moreno-Moreno, A. Sánchez
{"title":"Study of the photoresponse of ITO/SiO2/Si/SiO2/Al MIS capacitor structures","authors":"J. M. G.-Martinez, K. González-Flores, Paulo Braulio, M. Moreno-Moreno, A. Sánchez","doi":"10.1109/LAEDC54796.2022.9908220","DOIUrl":"https://doi.org/10.1109/LAEDC54796.2022.9908220","url":null,"abstract":"In this work, we report on the photoresponse properties of metal-insulator-semiconductor (MIS) devices using a SiO2/Si/SiO2 multilayer (ML) as active I-layer and deposited on p-type and n-type Si substrates. The effect of a post-thermal annealing of the SiO2/Si/SiO2 ML was analyzed. Thermally annealed (TA)-MLs did not show any photoresponse, while devices with as-deposited (AD)-SiO2/Si/SiO2 ML (without TA) exhibit a strong photoresponse. Current vs voltage curves were performed in dark and under illumination using white, blue, green, yellow, and red LEDs; the (white) light/dark current ratio obtained at 0V is about 8.54E3 and 7.95E3 for n-type and p-type substrates, respectively. Moreover, AD-ML devices on n-type Si substrate exhibit the best results with a spectral response and external quantum efficiency values (at 0V) of 58.28 mA/W and 13.58% at 532 nm, respectively.","PeriodicalId":276855,"journal":{"name":"2022 IEEE Latin American Electron Devices Conference (LAEDC)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-07-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122133305","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Modular design of the Digital Control and Measurement System of a Falling Weight Deflectometer 落锤式偏转仪数字控制与测量系统的模块化设计
2022 IEEE Latin American Electron Devices Conference (LAEDC) Pub Date : 2022-07-04 DOI: 10.1109/LAEDC54796.2022.9907770
D. Flores, Cinthia Irias Padilla, Daniel Martinez Teruel
{"title":"Modular design of the Digital Control and Measurement System of a Falling Weight Deflectometer","authors":"D. Flores, Cinthia Irias Padilla, Daniel Martinez Teruel","doi":"10.1109/LAEDC54796.2022.9907770","DOIUrl":"https://doi.org/10.1109/LAEDC54796.2022.9907770","url":null,"abstract":"Due to the devices required for deflection bowl based analysis, the timing of the processes is key as is how versatile and robust the control system must be for use on road sections. This document presents the methodology followed to create a control device that meets certain requirements for the tests considering the synchrony of the electro valves control, geophones sampling window, analog signal conditioning and digital processing, allowing the possibility of maintenance on field making it reliable, robust and easy to implement, especially in countries with limitations in the manufacture of electronic devices. The experimental results are presented with the help of a Python-based HMI.","PeriodicalId":276855,"journal":{"name":"2022 IEEE Latin American Electron Devices Conference (LAEDC)","volume":"75 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-07-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123805012","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
On-Line PEM Fuel Cell Hydration Marker Based on Frequency Response Analysis 基于频响分析的PEM燃料电池水化在线标记
2022 IEEE Latin American Electron Devices Conference (LAEDC) Pub Date : 2022-07-04 DOI: 10.1109/LAEDC54796.2022.9908205
J. Ponce-Hernandez, Antonio Estrada-Torres, Eloy Rodriguez-Vazquez, V. S. Balderrama
{"title":"On-Line PEM Fuel Cell Hydration Marker Based on Frequency Response Analysis","authors":"J. Ponce-Hernandez, Antonio Estrada-Torres, Eloy Rodriguez-Vazquez, V. S. Balderrama","doi":"10.1109/LAEDC54796.2022.9908205","DOIUrl":"https://doi.org/10.1109/LAEDC54796.2022.9908205","url":null,"abstract":"PEM fuel cell hydration monitoring is a key factor to keep a humid balance inside the proton exchange membrane. It is well known that, high humid level inside of the fuel cell can flooding the diffusion layer and decreasing the mass flow of reactant gases. On the other hand, a drying condition decreases the charge transfer between the cell anode and cathode. Both conditions cause irreversible damage in the proton exchange membrane and drop the fuel cell performance. In this study, the experimental data obtained from PEM fuel single-cell are analyzed by electrochemical impedance spectroscopy (EIS). These data are treated and analyzed to be modeled using a circuital model. Also, it is developed a method to predict the humid that the single-cell is experimenting when the EIS is on-line by injecting the perturbation current to fuel cell system operating in the field. The results obtained from the model against experimental data, they fit in 95%.","PeriodicalId":276855,"journal":{"name":"2022 IEEE Latin American Electron Devices Conference (LAEDC)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-07-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131716845","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Chemical polishing of titanium foil and detachment of TiO2 nanotubes as key synthesis parameters to gas sensing applications 化学抛光钛箔和剥离TiO2纳米管是气敏应用的关键合成参数
2022 IEEE Latin American Electron Devices Conference (LAEDC) Pub Date : 2022-07-04 DOI: 10.1109/LAEDC54796.2022.9908234
Alba Arenas-Hernandez, C. Zuniga, A. Jacome, M. Moreno, Julio César Mendoza-Cervantes, C. Ascencio-Hurtado, A. Orduña-Díaz
{"title":"Chemical polishing of titanium foil and detachment of TiO2 nanotubes as key synthesis parameters to gas sensing applications","authors":"Alba Arenas-Hernandez, C. Zuniga, A. Jacome, M. Moreno, Julio César Mendoza-Cervantes, C. Ascencio-Hurtado, A. Orduña-Díaz","doi":"10.1109/LAEDC54796.2022.9908234","DOIUrl":"https://doi.org/10.1109/LAEDC54796.2022.9908234","url":null,"abstract":"In this work, we present two key parameters, chemical polishing and detachment, to improve the synthesis and organization of TiO2 nanotubes for gas sensing applications. Chemical polishing with an acid solution was applied to a titanium foil to reduce its roughness before synthesis. Next, TiO2 nanotubes were synthesized through a three-step anodization process, after the first and second steps, the detachment process was performed using two chemical solutions: one for partial detachment and one for complete detachment. The effect of these parameters was studied by FE-SEM and AFM. We found a significant decrease in roughness because the chemical polishing decreases the irregularities of titanium foil. Furthermore, the complete detachment improves the organization of nanotubes, like a honeycomb, because Ti nanobowls operate as a template. The TiO2 nanotubes were subjected to gas sensing tests, which showed that a better organization of nanotubes leads to an increase in the change of electrical resistance for reducing gas.","PeriodicalId":276855,"journal":{"name":"2022 IEEE Latin American Electron Devices Conference (LAEDC)","volume":"150 1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-07-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124605957","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Impact of Chuck Temperature on Flicker Noise (1/f) Performance of PDSOI n-channel MOSFETs 卡盘温度对PDSOI n沟道mosfet闪烁噪声(1/f)性能的影响
2022 IEEE Latin American Electron Devices Conference (LAEDC) Pub Date : 2022-07-04 DOI: 10.1109/LAEDC54796.2022.9908198
S. Pathak, Asif Amin, P. Srinivasan, F. Guarín, A. Dixit
{"title":"Impact of Chuck Temperature on Flicker Noise (1/f) Performance of PDSOI n-channel MOSFETs","authors":"S. Pathak, Asif Amin, P. Srinivasan, F. Guarín, A. Dixit","doi":"10.1109/LAEDC54796.2022.9908198","DOIUrl":"https://doi.org/10.1109/LAEDC54796.2022.9908198","url":null,"abstract":"This paper reports the flicker noise (1/f) analysis of NFETs fabricated using a 45-nm partially depleted silicon on insulator (PDSOI) RFCMOS technology. The noise characterization and analysis are performed at different chuck temperatures down to −20 °C in linear region of operation. It has been found that the normalized drain current noise power spectral density increases with increasing temperature up to 120 °C. The carrier number fluctuation model has been used to successfully explain the measured 1/f noise at these temperatures. The trap densities extracted at gate overdrive voltage of 0.1 V and 0.15 V are found to increase with increasing temperature, as only electrically active traps within a few kT of the surface Fermi level (EF) contribute to 1/f noise. In addition, the frequency exponent γ is < 1 for all temperatures, which indicates non-uniform distribution of traps across the energy bandgap.","PeriodicalId":276855,"journal":{"name":"2022 IEEE Latin American Electron Devices Conference (LAEDC)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-07-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131219197","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
In Situ Monitoring Technique of Self-Heating in Bulk MOSFETs at Cryogenic Temperatures using Subthreshold Current 基于亚阈值电流的体mosfet低温自热原位监测技术
2022 IEEE Latin American Electron Devices Conference (LAEDC) Pub Date : 2022-07-04 DOI: 10.1109/LAEDC54796.2022.9908242
Masayuki Ichikawa, Takahisa Tanaka, K. Uchida, Tomohisa Miyao, Munehiro Tada, H. Ishikuro
{"title":"In Situ Monitoring Technique of Self-Heating in Bulk MOSFETs at Cryogenic Temperatures using Subthreshold Current","authors":"Masayuki Ichikawa, Takahisa Tanaka, K. Uchida, Tomohisa Miyao, Munehiro Tada, H. Ishikuro","doi":"10.1109/LAEDC54796.2022.9908242","DOIUrl":"https://doi.org/10.1109/LAEDC54796.2022.9908242","url":null,"abstract":"This work proposes an evaluation technique of self-heating (SH) in a 65-nm bulk CMOS transistor at cryogenic temperature (4.2K). For the in-situ monitoring of self-heating in cryo-CMOS circuits, transient response of the subthreshold drain current is used, which makes it possible to estimate the temperature at on-state of MOSFETs. The relation between the temperature increase by self-heating and power consumption of MOSFET has been experimentally obtained, which will help a design of high performance cryo-CMOS circuits for quantum computer application.","PeriodicalId":276855,"journal":{"name":"2022 IEEE Latin American Electron Devices Conference (LAEDC)","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-07-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132063806","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Electrical Performance of Fractal Web as Flexible Interconnects 分形网作为柔性互连体的电性能研究
2022 IEEE Latin American Electron Devices Conference (LAEDC) Pub Date : 2022-07-04 DOI: 10.1109/LAEDC54796.2022.9908197
Ananya Bhattacharjee, R. K. Baruah
{"title":"Electrical Performance of Fractal Web as Flexible Interconnects","authors":"Ananya Bhattacharjee, R. K. Baruah","doi":"10.1109/LAEDC54796.2022.9908197","DOIUrl":"https://doi.org/10.1109/LAEDC54796.2022.9908197","url":null,"abstract":"Spiderweb is one of the most mechanically robust and optimized naturally available structure, which can withstand multidirectional forces, in addition to the fact that the structure works even if one or more spiral lines are broken. Such a design can be worked with as an important model to develop conformal, lightweight, and stretchable electronic configuration like arrays of sensors environment for healthcare applications. Interconnects in flexible electronic circuit play a significant role on its performance and multiple types of geometries have its inspiration from biological world. In this work, fractal spiderweb based interconnect design is studied for mechanical strength and compared with similar dimensional other available intercommons using finite element method (FEM). A third order fractal web architecture is designed with gold layer integrated over polyimide. Prominent flexible interconnect geometries and their electrical performance is compared with that of fractal web architecture. The design is studied under axial load in two perpendicular directions and under shear load in six radial directions. Electrical parameters i.e., resistance and maximum electric field intensity of the simulated structure under loading conditions were observed when the fractal nodes are cut radially and spirally.","PeriodicalId":276855,"journal":{"name":"2022 IEEE Latin American Electron Devices Conference (LAEDC)","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-07-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133056503","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Modeling of silicon stacked nanowire and nanosheet transistors at high temperatures 高温下硅堆叠纳米线和纳米片晶体管的建模
2022 IEEE Latin American Electron Devices Conference (LAEDC) Pub Date : 2022-07-04 DOI: 10.1109/LAEDC54796.2022.9908193
A. Cerdeira, M. Estrada, Genaro Mariniello Da Silva, J. C. Rodrigues, M. Pavanello
{"title":"Modeling of silicon stacked nanowire and nanosheet transistors at high temperatures","authors":"A. Cerdeira, M. Estrada, Genaro Mariniello Da Silva, J. C. Rodrigues, M. Pavanello","doi":"10.1109/LAEDC54796.2022.9908193","DOIUrl":"https://doi.org/10.1109/LAEDC54796.2022.9908193","url":null,"abstract":"In this work, we demonstrate that the Symmetric Doped Double-Gate Model (SDDGM), previously validated for modeling FinFETs, stacked nanowire, and nanosheet transistors at room temperature, can be extended for modeling stacked nanowire and nanosheet transistors at high temperatures. The modeled results are validated by comparison with experimental data.","PeriodicalId":276855,"journal":{"name":"2022 IEEE Latin American Electron Devices Conference (LAEDC)","volume":"76 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-07-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134250417","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Exploring the suitability of Dual Step Gate Oxide Design on β – Ga2O3 MOSFET for High Power Microwave Applications – Part II 探索β - Ga2O3 MOSFET双阶栅氧化物设计在高功率微波应用中的适用性-第二部分
2022 IEEE Latin American Electron Devices Conference (LAEDC) Pub Date : 2022-07-04 DOI: 10.1109/LAEDC54796.2022.9908204
Priyanshi Goyal, H. Kaur
{"title":"Exploring the suitability of Dual Step Gate Oxide Design on β – Ga2O3 MOSFET for High Power Microwave Applications – Part II","authors":"Priyanshi Goyal, H. Kaur","doi":"10.1109/LAEDC54796.2022.9908204","DOIUrl":"https://doi.org/10.1109/LAEDC54796.2022.9908204","url":null,"abstract":"In the present work, various metrics of a step gate β – Ga2O3 MOSFET have been studied for assessing its suitability for microwave applications. Transconductance, intrinsic parasitic capacitance, transition frequency, gain bandwidth product etc., are some of the critical parameters which have been thoroughly investigated. Furthermore, scattering parameters have also been examined and the parameters obtained for proposed device have been compared with those obtained for conventional device. The obtained figure of merits demonstrate that the proposed device is a promising contender for microwave applications.","PeriodicalId":276855,"journal":{"name":"2022 IEEE Latin American Electron Devices Conference (LAEDC)","volume":"85 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-07-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124880602","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
n-MOS transistor impact ionization boosted by cumulative stress degradation in a 250 nm SiGe BiCMOS technology 在250nm SiGe BiCMOS技术中，n-MOS晶体管的累积应力退化促进了冲击电离
2022 IEEE Latin American Electron Devices Conference (LAEDC) Pub Date : 2022-07-04 DOI: 10.1109/LAEDC54796.2022.9908206
Gutierrez D. Edmundo A., Otero C. Alan Y., F. Xiomara Ribero
{"title":"n-MOS transistor impact ionization boosted by cumulative stress degradation in a 250 nm SiGe BiCMOS technology","authors":"Gutierrez D. Edmundo A., Otero C. Alan Y., F. Xiomara Ribero","doi":"10.1109/LAEDC54796.2022.9908206","DOIUrl":"https://doi.org/10.1109/LAEDC54796.2022.9908206","url":null,"abstract":"We introduce experimental observations of impact ionization boosting in n-type MOSFET of a 250 nm SiGe BiCMOS technology, when operated under aging test conditions. The electrical characteristics of the transistor, such as drain current capability, transconductance, and threshold voltage degrade with the stress time following a power law as expected. However, the impact ionization measured as the hot-carrier bulk current enhances with the aging process. By comparison with numerical simulations, we corroborate that such an impact ionization boosting is attributed to an enhancement of the longitudinal electric field at the drain side.","PeriodicalId":276855,"journal":{"name":"2022 IEEE Latin American Electron Devices Conference (LAEDC)","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-07-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124097355","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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