Impact of Chuck Temperature on Flicker Noise (1/f) Performance of PDSOI n-channel MOSFETs

Abstract

This paper reports the flicker noise (1/f) analysis of NFETs fabricated using a 45-nm partially depleted silicon on insulator (PDSOI) RFCMOS technology. The noise characterization and analysis are performed at different chuck temperatures down to −20 °C in linear region of operation. It has been found that the normalized drain current noise power spectral density increases with increasing temperature up to 120 °C. The carrier number fluctuation model has been used to successfully explain the measured 1/f noise at these temperatures. The trap densities extracted at gate overdrive voltage of 0.1 V and 0.15 V are found to increase with increasing temperature, as only electrically active traps within a few kT of the surface Fermi level (EF) contribute to 1/f noise. In addition, the frequency exponent γ is < 1 for all temperatures, which indicates non-uniform distribution of traps across the energy bandgap.