{"title":"探索β - Ga2O3 MOSFET双阶栅氧化物设计在高功率微波应用中的适用性-第二部分","authors":"Priyanshi Goyal, H. Kaur","doi":"10.1109/LAEDC54796.2022.9908204","DOIUrl":null,"url":null,"abstract":"In the present work, various metrics of a step gate β – Ga2O3 MOSFET have been studied for assessing its suitability for microwave applications. Transconductance, intrinsic parasitic capacitance, transition frequency, gain bandwidth product etc., are some of the critical parameters which have been thoroughly investigated. Furthermore, scattering parameters have also been examined and the parameters obtained for proposed device have been compared with those obtained for conventional device. The obtained figure of merits demonstrate that the proposed device is a promising contender for microwave applications.","PeriodicalId":276855,"journal":{"name":"2022 IEEE Latin American Electron Devices Conference (LAEDC)","volume":"85 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-07-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Exploring the suitability of Dual Step Gate Oxide Design on β – Ga2O3 MOSFET for High Power Microwave Applications – Part II\",\"authors\":\"Priyanshi Goyal, H. Kaur\",\"doi\":\"10.1109/LAEDC54796.2022.9908204\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In the present work, various metrics of a step gate β – Ga2O3 MOSFET have been studied for assessing its suitability for microwave applications. Transconductance, intrinsic parasitic capacitance, transition frequency, gain bandwidth product etc., are some of the critical parameters which have been thoroughly investigated. Furthermore, scattering parameters have also been examined and the parameters obtained for proposed device have been compared with those obtained for conventional device. The obtained figure of merits demonstrate that the proposed device is a promising contender for microwave applications.\",\"PeriodicalId\":276855,\"journal\":{\"name\":\"2022 IEEE Latin American Electron Devices Conference (LAEDC)\",\"volume\":\"85 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2022-07-04\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2022 IEEE Latin American Electron Devices Conference (LAEDC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/LAEDC54796.2022.9908204\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 IEEE Latin American Electron Devices Conference (LAEDC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/LAEDC54796.2022.9908204","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Exploring the suitability of Dual Step Gate Oxide Design on β – Ga2O3 MOSFET for High Power Microwave Applications – Part II
In the present work, various metrics of a step gate β – Ga2O3 MOSFET have been studied for assessing its suitability for microwave applications. Transconductance, intrinsic parasitic capacitance, transition frequency, gain bandwidth product etc., are some of the critical parameters which have been thoroughly investigated. Furthermore, scattering parameters have also been examined and the parameters obtained for proposed device have been compared with those obtained for conventional device. The obtained figure of merits demonstrate that the proposed device is a promising contender for microwave applications.
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