Exploring the suitability of Dual Step Gate Oxide Design on β – Ga2O3 MOSFET for High Power Microwave Applications – Part II

Abstract

In the present work, various metrics of a step gate β – Ga2O3 MOSFET have been studied for assessing its suitability for microwave applications. Transconductance, intrinsic parasitic capacitance, transition frequency, gain bandwidth product etc., are some of the critical parameters which have been thoroughly investigated. Furthermore, scattering parameters have also been examined and the parameters obtained for proposed device have been compared with those obtained for conventional device. The obtained figure of merits demonstrate that the proposed device is a promising contender for microwave applications.