2022 IEEE Latin American Electron Devices Conference (LAEDC)最新文献_第4页

Time-dependent Multiple Gate Voltage Reliability of Hybrid Ferroelectric Charge Trap Gate Stack (FEG) GaN HEMT for Power Device Applications 用于功率器件的混合铁电电荷阱门栈(FEG) GaN HEMT的时变多门电压可靠性

2022 IEEE Latin American Electron Devices Conference (LAEDC) Pub Date : 2022-07-04 DOI: 10.1109/LAEDC54796.2022.9907769

S. K. Rathaur, Tsung-Ying Yang, Chih-Yi Yang, E. Chang, Heng-Tung Hsu, A. Dixit

引用次数: 1

2D simulation of the resistive state in bipolar resistive switching memories based on oxygen vacancies 基于氧空位的双极电阻开关存储器中电阻态的二维模拟

2022 IEEE Latin American Electron Devices Conference (LAEDC) Pub Date : 2022-07-04 DOI: 10.1109/LAEDC54796.2022.9908188

J. F. R. Rios, S. P. Pérez García, M. Moreno, A. Sánchez

引用次数: 1

Integrated NMOS Differential Amplifier 集成NMOS差分放大器

2022 IEEE Latin American Electron Devices Conference (LAEDC) Pub Date : 2022-07-04 DOI: 10.1109/LAEDC54796.2022.9908177

M. Almada-Gutierrez, F. Sandoval-Ibarra, R. Sánchez-Fraga

引用次数: 0

Preface from the IEEE LAEDC 2022 Conference General Chair IEEE LAEDC 2022会议总主席的序言

2022 IEEE Latin American Electron Devices Conference (LAEDC) Pub Date : 2022-07-04 DOI: 10.1109/laedc54796.2022.9908227

引用次数: 0

Effect of probe coupling on MOSFET series resistance extraction up to 110 GHz 探头耦合对110 GHz频率下MOSFET串联电阻提取的影响

2022 IEEE Latin American Electron Devices Conference (LAEDC) Pub Date : 2022-07-04 DOI: 10.1109/LAEDC54796.2022.9908195

L. Nyssens, M. Rack, D. Lederer, J. Raskin

{"title":"Effect of probe coupling on MOSFET series resistance extraction up to 110 GHz","authors":"L. Nyssens, M. Rack, D. Lederer, J. Raskin","doi":"10.1109/LAEDC54796.2022.9908195","DOIUrl":"https://doi.org/10.1109/LAEDC54796.2022.9908195","url":null,"abstract":"The measurement of series extrinsic resistances of MOSFETs is not straightforward and the gate resistance (Rg) in particular is very sensitive to noise measurement and measurement inaccuracies. They are critical elements that need an accurate estimation for proper FET modeling and RF figures of merit assessment, as they limit the extrinsic cutoff and maximum oscillation frequencies (ft, fmax) in deeply scaled CMOS technologies. This work compares the extrinsic resistances extraction with different off-wafer and on-wafer calibration and de-embedding methods to provide an insight on the appropriate procedure for accurate correction. Then, measurements obtained with three different probe technologies are compared. A resonance-like signature specific to each probe technology is observed, caused by unwanted coupling between the probe and the on-chip neighbor environment of the test structures. This coupling is not well corrected by the calibration and de-embedding procedure and is reflected back on the corrected measurements, mainly on the fmax and Rg curves. Overall, the best probe technology for DC-110 GHz measurements among the probes tested in this work is identified to be Picoprobe, featuring a gate resistance extraction with less than ±3% variation from 10 to 60 GHz.","PeriodicalId":276855,"journal":{"name":"2022 IEEE Latin American Electron Devices Conference (LAEDC)","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-07-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129411153","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Design of Siw Based on Chip Slot Antenna for Terahertz Frequency 基于片式太赫兹槽天线的Siw设计

2022 IEEE Latin American Electron Devices Conference (LAEDC) Pub Date : 2022-07-04 DOI: 10.1109/LAEDC54796.2022.9908215

Palak Srivastava, K. Anjali, A. S. Saini

{"title":"Design of Siw Based on Chip Slot Antenna for Terahertz Frequency","authors":"Palak Srivastava, K. Anjali, A. S. Saini","doi":"10.1109/LAEDC54796.2022.9908215","DOIUrl":"https://doi.org/10.1109/LAEDC54796.2022.9908215","url":null,"abstract":"This research presents an operation of on chip antenna at Terahertz frequency range (0.6–0.68 THz). The overall dimensions of antenna are 1000×1000×100μm. The design of metamaterial (MTM) based on chip antenna contained five stacked layers of polyimide and aluminum as ground and top substrates, radiation patches, ground plane and feed line. On the 50um top polyimide layer, four radiation patches are implemented which convey circular-shaped and the feed is given on the 50um base- polyimide layer by implementing square microstrip lines i.e., further connected to each other also, waveguide port is used to excite the antenna. A coupling square slot on the ground layer has sandwiched between bottoms to upper layers. Initialization of electromagnetic waves from bottom feed to top radiation patches has conducted through coupling square which executed on ground plane. To attain high performance parameters without expand antenna’s size, the MTM and SIW properties have been adjusted to the antenna construction by applying linear tapered slots on the patch upper surfaces and metallic vias all over the middle ground layer jointed upper and bottom substrate to each other. The slots act as series Left Hand (LH) capacitor and the vias represent as shunt LH inductors. The results show that the proposed antenna including compact size, large bandwidth on terahertz range, low profile, low cost, simple design, and easy to construct can be conceivably suitable for THz integrated circuits. The proposed results have achieved by CST Microwave Studio software.","PeriodicalId":276855,"journal":{"name":"2022 IEEE Latin American Electron Devices Conference (LAEDC)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-07-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129763173","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Lumped model-based analysis of hBN RF switches 基于集总模型的hBN射频开关分析

2022 IEEE Latin American Electron Devices Conference (LAEDC) Pub Date : 2022-07-04 DOI: 10.1109/LAEDC54796.2022.9907772

Omar Jordán-García, E. Ramírez-García, D. Jiménez, A. Pacheco-Sánchez

引用次数: 1

Nonlinear Applications, State Equations and Simulations for Piezoelectric Materials 压电材料的非线性应用、状态方程与模拟

2022 IEEE Latin American Electron Devices Conference (LAEDC) Pub Date : 2022-07-04 DOI: 10.1109/LAEDC54796.2022.9908213

A. Alvarado, A. Jacome, F. J. De la Hidalga-W, P. Rosales-Quintero

引用次数: 0

Study of Error Propagation and Generation in Harrow-Hassidim-Lloyd (HHL) Quantum Algorithm Harrow-Hassidim-Lloyd (HHL)量子算法中的误差传播与产生研究

2022 IEEE Latin American Electron Devices Conference (LAEDC) Pub Date : 2022-07-04 DOI: 10.1109/LAEDC54796.2022.9908231

Anika Zaman, H. Wong

{"title":"Study of Error Propagation and Generation in Harrow-Hassidim-Lloyd (HHL) Quantum Algorithm","authors":"Anika Zaman, H. Wong","doi":"10.1109/LAEDC54796.2022.9908231","DOIUrl":"https://doi.org/10.1109/LAEDC54796.2022.9908231","url":null,"abstract":"In this paper, we study the error propagation and generation in the Harrow-Hassidim-Lloyd (HHL) quantum algorithm runs on IBM-Q hardware with the help of a MATLAB simulator. HHL is a quantum algorithm that can provide exponential speedup over the fastest classical algorithm (conjugate gradient method) in solving systems of linear equations (SLE). However, without error correction, it cannot give correct results even in a 2-variable system due to its complexity. In this study, an HHL quantum circuit for a 2-variable SLE is implemented in IBM-Q and the error is extracted after each stage of the circuit and compared to a MATLAB simulator. We identified three major sources of errors, namely single-qubit flipping, gate infidelity, and error propagation. We also found that at the ancillary bit rotation stage, the error becomes large but the encoded solution still has high fidelity. However, the solution is mostly lost after the inverse quantum phase estimation which is necessary to extract the solution efficiently. Therefore, it is suggested that error correction resources, if limited, should be added to the second half of the circuit.","PeriodicalId":276855,"journal":{"name":"2022 IEEE Latin American Electron Devices Conference (LAEDC)","volume":"423 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-07-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126713571","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

Device Simulation of the Dyakonov-Shur Plasma Instability for THz Wave Generation 太赫兹波产生中Dyakonov-Shur等离子体不稳定性的器件模拟

2022 IEEE Latin American Electron Devices Conference (LAEDC) Pub Date : 2022-07-04 DOI: 10.1109/LAEDC54796.2022.9908244

C. Jungemann, M. Noei, Tobias Linn

{"title":"Device Simulation of the Dyakonov-Shur Plasma Instability for THz Wave Generation","authors":"C. Jungemann, M. Noei, Tobias Linn","doi":"10.1109/LAEDC54796.2022.9908244","DOIUrl":"https://doi.org/10.1109/LAEDC54796.2022.9908244","url":null,"abstract":"Dyakonov and Shur suggested electron-plasma instabilities in the channel of HEMTs as new sources for THz waves that could fill the THz gap. Their analytical model was based on the Euler equation and Dirichlet boundary conditions for the electron density at the source side of the channel and for the current density at the drain side. There have been many attempts to solve the equations for realistic devices by numerical simulation, where the boundary conditions between the channel and the highly doped source/drain regions (ohmic contacts) are a result of the device simulations. The only boundary conditions, that can be specified in the device simulations are the ones between the highly doped regions and the terminals. It turned out that these boundary conditions have a strong impact on the plasma resonances in the HEMT and the resonances vanish, if the device is simulated by the more physics-based Boltzmann transport equation in conjunction with thermal bath boundary conditions. The lack of plasma instabilities in these simulations is matched by experiments, in which no clear indications of instabilities could be found.","PeriodicalId":276855,"journal":{"name":"2022 IEEE Latin American Electron Devices Conference (LAEDC)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-07-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134099280","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0