Lumped model-based analysis of hBN RF switches

Abstract

The intrinsic and extrinsic impedance parameters, the return loss, insertion loss and isolation of RF two-dimensional switches fabricated with hexagonal boron nitride (hBN) are described here by a lumped equivalent circuit model. Straight-forward analytical expressions are obtained. In contrast to conventional switches, the unique RF performance of the hBN switch, at ON-state i.e., a direct improvement with frequency of the insertion loss, is accurately described by considering a capacitor in the intrinsic part of the model. The latter is suggested to be related to storaged charge during the resistive switching mechanism.