Jesús Jiménez-León, A. Sarmiento-Reyes, P. Rosales-Quintero
{"title":"实验忆阻器件的静电紧凑模型","authors":"Jesús Jiménez-León, A. Sarmiento-Reyes, P. Rosales-Quintero","doi":"10.1109/LAEDC54796.2022.9907768","DOIUrl":null,"url":null,"abstract":"A compact model for a TiO2–based resistive switching device is presented. An electrostatic model is used to describe the inner conductive filament as two equivalent conductances in series connection. Analytical expressions for the experimental conductance and current of the device are obtained, and the memristive system that describes their behavior is formulated. The resulting curves of the model show good agreement, i.e. 87.44% of similarity, when compared to the experimental.","PeriodicalId":276855,"journal":{"name":"2022 IEEE Latin American Electron Devices Conference (LAEDC)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-07-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"An Electrostatic Compact Model for Experimental Memristive Devices\",\"authors\":\"Jesús Jiménez-León, A. Sarmiento-Reyes, P. Rosales-Quintero\",\"doi\":\"10.1109/LAEDC54796.2022.9907768\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A compact model for a TiO2–based resistive switching device is presented. An electrostatic model is used to describe the inner conductive filament as two equivalent conductances in series connection. Analytical expressions for the experimental conductance and current of the device are obtained, and the memristive system that describes their behavior is formulated. The resulting curves of the model show good agreement, i.e. 87.44% of similarity, when compared to the experimental.\",\"PeriodicalId\":276855,\"journal\":{\"name\":\"2022 IEEE Latin American Electron Devices Conference (LAEDC)\",\"volume\":\"8 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2022-07-04\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2022 IEEE Latin American Electron Devices Conference (LAEDC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/LAEDC54796.2022.9907768\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 IEEE Latin American Electron Devices Conference (LAEDC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/LAEDC54796.2022.9907768","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
An Electrostatic Compact Model for Experimental Memristive Devices
A compact model for a TiO2–based resistive switching device is presented. An electrostatic model is used to describe the inner conductive filament as two equivalent conductances in series connection. Analytical expressions for the experimental conductance and current of the device are obtained, and the memristive system that describes their behavior is formulated. The resulting curves of the model show good agreement, i.e. 87.44% of similarity, when compared to the experimental.