先进的逻辑，记忆，传感和量子技术的ALD

2022 IEEE Latin American Electron Devices Conference (LAEDC) Pub Date : 2022-07-04 DOI:10.1109/LAEDC54796.2022.9908229

J. Molina-Reyes

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引用次数: 0

摘要

这项工作恢复了我们课题组在使用原子层沉积(ALD)作为高介电常数金属氧化物的主要薄膜沉积技术方面获得的一些最重要的结果。ALD已应用于逻辑、存储、传感和量子技术的发展，其中超薄金属氧化物(物理厚度小于10nm的Al2O3、HfO2和TiO2)是正在研究的最终器件的活性部分。

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ALD for Advanced Logic, Memory, Sensing and Quantum Technologies

This work resumes some of the most important results that have been obtained in our research group regarding the use of atomic-layer deposition (ALD) as the main thin-film deposition technique for metal oxides with high dielectric constant. ALD has been applied for the development of logic, memory, sensing and quantum technologies in which ultra-thin metal oxides (Al2O3, HfO2 and TiO2 with a physical thickness of less than 10nm), are the active part of the final devices under study.

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来源期刊

2022 IEEE Latin American Electron Devices Conference (LAEDC)

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