低温下纳米SOI器件的自热效应建模

2022 IEEE Latin American Electron Devices Conference (LAEDC) Pub Date : 2022-07-04 DOI:10.1109/LAEDC54796.2022.9908207

J. Méndez-V., D. Vasileska, K. Raleva, E. A. Gutiérrez

{"title":"低温下纳米SOI器件的自热效应建模","authors":"J. Méndez-V., D. Vasileska, K. Raleva, E. A. Gutiérrez","doi":"10.1109/LAEDC54796.2022.9908207","DOIUrl":null,"url":null,"abstract":"Self-heating effects are important at cryogenic temperatures. For that purpose an electro-thermal solver for a range of temperatures is proposed and developed. According to our knowledge, this is the first simulator able to simulate self-heating effects in nanoscale SOI devices at low temperatures.","PeriodicalId":276855,"journal":{"name":"2022 IEEE Latin American Electron Devices Conference (LAEDC)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-07-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Modeling Self-Heating Effects in Nanometer SOI Devices at Cryogenic Temperatures\",\"authors\":\"J. Méndez-V., D. Vasileska, K. Raleva, E. A. Gutiérrez\",\"doi\":\"10.1109/LAEDC54796.2022.9908207\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Self-heating effects are important at cryogenic temperatures. For that purpose an electro-thermal solver for a range of temperatures is proposed and developed. According to our knowledge, this is the first simulator able to simulate self-heating effects in nanoscale SOI devices at low temperatures.\",\"PeriodicalId\":276855,\"journal\":{\"name\":\"2022 IEEE Latin American Electron Devices Conference (LAEDC)\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2022-07-04\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2022 IEEE Latin American Electron Devices Conference (LAEDC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/LAEDC54796.2022.9908207\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 IEEE Latin American Electron Devices Conference (LAEDC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/LAEDC54796.2022.9908207","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

摘要

自热效应在低温下很重要。为此，提出并开发了一种适用于一定温度范围的电热求解器。据我们所知，这是第一个能够在低温下模拟纳米级SOI器件自热效应的模拟器。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Modeling Self-Heating Effects in Nanometer SOI Devices at Cryogenic Temperatures

Self-heating effects are important at cryogenic temperatures. For that purpose an electro-thermal solver for a range of temperatures is proposed and developed. According to our knowledge, this is the first simulator able to simulate self-heating effects in nanoscale SOI devices at low temperatures.

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2022 IEEE Latin American Electron Devices Conference (LAEDC)

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