An Electrostatic Compact Model for Experimental Memristive Devices

Abstract

A compact model for a TiO2–based resistive switching device is presented. An electrostatic model is used to describe the inner conductive filament as two equivalent conductances in series connection. Analytical expressions for the experimental conductance and current of the device are obtained, and the memristive system that describes their behavior is formulated. The resulting curves of the model show good agreement, i.e. 87.44% of similarity, when compared to the experimental.