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Material Science and Material Properties for Infrared Optics最新文献

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Pinning of the Fermi level in A2B6 semiconductors A2B6半导体中费米能级的固定
Material Science and Material Properties for Infrared Optics Pub Date : 1999-11-04 DOI: 10.1117/12.368381
V. Babentsov
{"title":"Pinning of the Fermi level in A2B6 semiconductors","authors":"V. Babentsov","doi":"10.1117/12.368381","DOIUrl":"https://doi.org/10.1117/12.368381","url":null,"abstract":"The phenomenon of Fermi-level 'pinning' was investigated in A2B6 compounds such as CdTe, ZnTe and others. By comparison of many data we have shown that the same energy EFS equals 4, 9 eV is valid for A2B6 compounds as for A4and A3B5 semiconductors. On this basis the position of Fermi-level 'pinning' for A2B6 compounds within band-gaps is predicted. The nature of Fermi-level 'pinning' is discussed.","PeriodicalId":276773,"journal":{"name":"Material Science and Material Properties for Infrared Optics","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-11-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125821151","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Correlation of the characteristics of MIS structures and stoichiometry disturbances of Hg1-xZnxTe Hg1-xZnxTe的MIS结构特征与化学计量扰动的相关性
Material Science and Material Properties for Infrared Optics Pub Date : 1999-11-04 DOI: 10.1117/12.368331
O. Lanskaya, E. Lilenko, A. Voitsekhovskii
{"title":"Correlation of the characteristics of MIS structures and stoichiometry disturbances of Hg1-xZnxTe","authors":"O. Lanskaya, E. Lilenko, A. Voitsekhovskii","doi":"10.1117/12.368331","DOIUrl":"https://doi.org/10.1117/12.368331","url":null,"abstract":"The composition of subsurface region MZT has been studied using Rutherford backscattering spectroscopy (RBS) ions helium. Interrelation of the electrical properties of MIS structures with the result of RBS have been determinated. It is found that the effective surface charge is connected with composition stoichiometry variation of subsurface region semiconductor.","PeriodicalId":276773,"journal":{"name":"Material Science and Material Properties for Infrared Optics","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-11-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125490165","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Precipitation mechanism of GaAs1-xPx/GaAs in the isothermal CVD method 等温CVD法中GaAs1-xPx/GaAs的沉淀机理
Material Science and Material Properties for Infrared Optics Pub Date : 1999-11-04 DOI: 10.1117/12.368405
V. A. Voronin, S. Guba, Marina A. Litvin
{"title":"Precipitation mechanism of GaAs1-xPx/GaAs in the isothermal CVD method","authors":"V. A. Voronin, S. Guba, Marina A. Litvin","doi":"10.1117/12.368405","DOIUrl":"https://doi.org/10.1117/12.368405","url":null,"abstract":"In this paper possibilities of the UV-spectroscopy method to investigate the kinetic of the gas phase formation in the system GaP-PCl3-AsCl3-H2 are discussed. The model describing the mechanism of GaAsx-P1-x/GaAs layers epitaxial deposition is suggested at the isothermal CVD-method.","PeriodicalId":276773,"journal":{"name":"Material Science and Material Properties for Infrared Optics","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-11-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117141187","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Properties and stability of parameters of highly compensated PbS-CdS, PbS-SnS, PbS-PbO, and PbTe-CdTe films 高补偿PbS-CdS、PbS-SnS、PbS-PbO和PbTe-CdTe薄膜的性能和参数稳定性
Material Science and Material Properties for Infrared Optics Pub Date : 1999-11-04 DOI: 10.1117/12.368336
S. Zimin
{"title":"Properties and stability of parameters of highly compensated PbS-CdS, PbS-SnS, PbS-PbO, and PbTe-CdTe films","authors":"S. Zimin","doi":"10.1117/12.368336","DOIUrl":"https://doi.org/10.1117/12.368336","url":null,"abstract":"The properties of highly compensated quasiuniform films of Pb1-xSnxS, Pb1-xCdxS, (PbS)1-x-(PbO)x, Pb1-xCdxTe solid solutions with a sodium acceptor impurity are described in this work. The films were grown by the method of molecular beam epitaxy on BaF2 substrates. It was shown that the films with different composition have the identical electric and photoelectric properties. Temperature dependences of Hall coefficient, dark resistivity and photoconductivity relaxation time have activation character. A high stability of electric and photoelectric parameters after thermal impact and after prolonged storage in the air was obtained.","PeriodicalId":276773,"journal":{"name":"Material Science and Material Properties for Infrared Optics","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-11-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115583822","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Charge impurity states of In, Ga, Ge in narrow-gap PbTe 窄隙PbTe中In、Ga、Ge的电荷杂质态
Material Science and Material Properties for Infrared Optics Pub Date : 1999-11-04 DOI: 10.1117/12.368348
V. Zlomanov, A. K. Tkalich
{"title":"Charge impurity states of In, Ga, Ge in narrow-gap PbTe","authors":"V. Zlomanov, A. K. Tkalich","doi":"10.1117/12.368348","DOIUrl":"https://doi.org/10.1117/12.368348","url":null,"abstract":"The XPS/XAES technique is applied to analyze the dominant electronic state of In, Ga, Ge impurities in PbTe single crystals doped above the point of Fermi level stabilization. It is shown that the effective electronic state of In impurity in PbTe can be represented as a mixture of 5s25p1 and 5s05p3 configurations, while Ga impurity atoms are present in the donor configuration 4s04p3. Oxidation state of Ge-atom is more than 2+. Vacancionic and interstitial clusters were revealed in Pb1-xInxTe by x-ray diffusive scattering method.","PeriodicalId":276773,"journal":{"name":"Material Science and Material Properties for Infrared Optics","volume":"68 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-11-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124859359","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Influence of radiation defects on the heterogeneity distribution and radiant recombination of GaP 辐射缺陷对GaP非均质分布及辐射复合的影响
Material Science and Material Properties for Infrared Optics Pub Date : 1999-11-04 DOI: 10.1117/12.368417
V. Tartachnik, O. M. Gontaruk, D. Korbutiak, Anatoly M. Krajchynskyj, A. Kudin, V. Opilat, M. Pinkovska, O. P. Shakhov
{"title":"Influence of radiation defects on the heterogeneity distribution and radiant recombination of GaP","authors":"V. Tartachnik, O. M. Gontaruk, D. Korbutiak, Anatoly M. Krajchynskyj, A. Kudin, V. Opilat, M. Pinkovska, O. P. Shakhov","doi":"10.1117/12.368417","DOIUrl":"https://doi.org/10.1117/12.368417","url":null,"abstract":"In the present work the results of the action of penetrating radiation on GaP structures has been studied.","PeriodicalId":276773,"journal":{"name":"Material Science and Material Properties for Infrared Optics","volume":"97 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-11-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127543943","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Currents in Hg1-xCdxTe photodiodes Hg1-xCdxTe光电二极管的电流
Material Science and Material Properties for Infrared Optics Pub Date : 1999-11-04 DOI: 10.1117/12.368344
J. V. Gumenjuk-Sichevskaya, F. Sizov
{"title":"Currents in Hg1-xCdxTe photodiodes","authors":"J. V. Gumenjuk-Sichevskaya, F. Sizov","doi":"10.1117/12.368344","DOIUrl":"https://doi.org/10.1117/12.368344","url":null,"abstract":"Carrier transport mechanisms in Hg1-xCdxTe photodiodes in the temperature range 70 divided by 150 K are discussed. Two major current mechanisms were included into balance equations of the p-n-junction: trap-assisted tunneling (TAT) and Schockley-Reed-Hall generation- recombination processes. For TAT Anderson's matrix element of the impurity ionization was used and the tunneling rate characteristics were calculated in the k-p approximation with the constant barrier field.Other current mechanism were included in consideration as additive contributions. Using donor and acceptor concentrations, trap level concentration, trap level energy, and in-junction trap level lifetimes as fitting parameters, we obtain a relatively good agreement with experimental data.","PeriodicalId":276773,"journal":{"name":"Material Science and Material Properties for Infrared Optics","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-11-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117237357","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Peculiarities of dynamic pyroelectric response of spin-coated corona-charged P(VDF/TrFE) polymer films 自旋包覆电晕带电P(VDF/TrFE)聚合物薄膜的动态热释电响应特性
Material Science and Material Properties for Infrared Optics Pub Date : 1999-11-04 DOI: 10.1117/12.368385
S. Bravina, N. Morozovsky, Z. Xia, Juping Song, Yewen Zhang
{"title":"Peculiarities of dynamic pyroelectric response of spin-coated corona-charged P(VDF/TrFE) polymer films","authors":"S. Bravina, N. Morozovsky, Z. Xia, Juping Song, Yewen Zhang","doi":"10.1117/12.368385","DOIUrl":"https://doi.org/10.1117/12.368385","url":null,"abstract":"Dynamic pyroelectric response of spin coated corona charged P(VDF/TrFE) copolymer films and commercial P(VDF/TrFE) films has been studied in a wide range of frequencies of radiation flux modulation. Investigation has been concentrated on the films with non-uniform distribution of pyroactivity through the film thickness. A low frequency pyroelectric resonance discovered earlier in commercially available PVDF films of various production has not been observed in the spin coated corona charged films and was weak pronounced in the commercial P(VDF/TrFE) copolymer films from 'Piezotech'. Results are explained with the assumption of significant role of prior stressed state in the polymer films for occurrence of pyroelectric resonance phenomena. Advantages of spin coated corona charged films for pyroelectric applications are discussed.","PeriodicalId":276773,"journal":{"name":"Material Science and Material Properties for Infrared Optics","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-11-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127357137","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Interference IR filters on CdSb monocrystal substrates CdSb单晶衬底上的干扰红外滤光片
Material Science and Material Properties for Infrared Optics Pub Date : 1999-11-04 DOI: 10.1117/12.368338
S. G. Dremluzhenko, L. I. Konopatseva, S. M. Kulikovskaya, Y. Stetsko, V. Strebezhev, A. Rarenko, S. Ostapov
{"title":"Interference IR filters on CdSb monocrystal substrates","authors":"S. G. Dremluzhenko, L. I. Konopatseva, S. M. Kulikovskaya, Y. Stetsko, V. Strebezhev, A. Rarenko, S. Ostapov","doi":"10.1117/12.368338","DOIUrl":"https://doi.org/10.1117/12.368338","url":null,"abstract":"Calculation and manufacturing methods of (lambda) equals 2,5-30 micrometers range interference IR-filters with deep suppression of short-wave obstacles based on the CdSb semiconductor monocrystal substrates with intrinsic absorption edge at (lambda) equals 2,5 micrometers are suggested.","PeriodicalId":276773,"journal":{"name":"Material Science and Material Properties for Infrared Optics","volume":"53 2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-11-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130550884","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Group-theory approach within the framework of the tight-binding model 紧密约束模型框架下的群论方法
Material Science and Material Properties for Infrared Optics Pub Date : 1999-11-04 DOI: 10.1117/12.368370
A. E. Madison
{"title":"Group-theory approach within the framework of the tight-binding model","authors":"A. E. Madison","doi":"10.1117/12.368370","DOIUrl":"https://doi.org/10.1117/12.368370","url":null,"abstract":"A new approach to the constructing of the model Hamiltonian within the framework of the general tight-binding formalism is proposed. Considerable simplification of the conventional procedure of matrix element determination is achieved taking advantages of the group theory. It is shown, that the overlapping of wave functions centered on the neighboring lattice sites in arbitrary low-symmetric lattice may be counted up through the coupling integrals between atom-like states, as though these atoms should be placed at the same distance along the z-axis. It is pointed out, that the self- consistent ab-initio calculation scheme based on the general assumptions of the tight-binding model appears to be possible.","PeriodicalId":276773,"journal":{"name":"Material Science and Material Properties for Infrared Optics","volume":"111 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-11-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132968368","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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