发布求助
文献互助 智能选刊 最新文献

Material Science and Material Properties for Infrared Optics最新文献

筛选
英文 中文
Material dispersion in (As2S3)x(AsI3)1-x glasses 材料在(As2S3)x(AsI3)1-x玻璃中的分散
Material Science and Material Properties for Infrared Optics Pub Date : 1999-11-04 DOI: 10.1117/12.368408
A. Kikineshy, I. Rosola
{"title":"Material dispersion in (As2S3)x(AsI3)1-x glasses","authors":"A. Kikineshy, I. Rosola","doi":"10.1117/12.368408","DOIUrl":"https://doi.org/10.1117/12.368408","url":null,"abstract":"An experimental study of the dispersion of the refractive indices n in (As2S3)x(AsI3)1-x glasses was performed. Experimental results were fitted by the Herzberger pentanomial which gave a possibility to calculate the dn/d(lambda) and d2n/d(lambda) 2 values. In the short wave spectral domain the dispersion coefficient dn/d(lambda) of the glassy As2S3 appears to be the same as in KRS-5, and with increasing the iodine concentration in the glasses the value of dn/d(lambda) decreases. The zero-dispersion os the glasses under study is shifted towards the long waves as the iodine concentration increases.","PeriodicalId":276773,"journal":{"name":"Material Science and Material Properties for Infrared Optics","volume":"114 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-11-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123956829","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Recombination current for p-i-n junctions based on compensated semiconductor materials 基于补偿半导体材料的p-i-n结复合电流
Material Science and Material Properties for Infrared Optics Pub Date : 1999-11-04 DOI: 10.1117/12.368345
A. Lyubchenko
{"title":"Recombination current for p-i-n junctions based on compensated semiconductor materials","authors":"A. Lyubchenko","doi":"10.1117/12.368345","DOIUrl":"https://doi.org/10.1117/12.368345","url":null,"abstract":"An energy diagram of a p-i-n junction made of compensated semiconductor materials involving electrically active deep recombination r-levels is proposed. The mechanism of current flow for forward bias under nonequilibrium charge carriers trapping and recombination in the high-resistance i-region formed due to the r-levels over compensation are analyzed. In the case of trapping: a) the nonequilibrium charge carriers lifetimes (tau) n does not equal (tau) p and the electron filing function fn of r-levels are space- dependent; b) for injected carriers the potential wells separated by barriers are formed near then- and p-regions. An analysis of the corresponding recombination statistics gives a complicated shape of the I-V-curve, with a section where the ideality coefficient v varies in the 1 < v 2 divided by 4 ranges. Nonequilibrium charge carriers tunneling through the barriers is possible at low temperatures.","PeriodicalId":276773,"journal":{"name":"Material Science and Material Properties for Infrared Optics","volume":"85 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-11-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116192948","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Phase states and magnetic structure of superconducting inclusions in narrow-gap semiconductor matrices 窄间隙半导体基质中超导内含物的相态和磁结构
Material Science and Material Properties for Infrared Optics Pub Date : 1999-11-04 DOI: 10.1117/12.368346
S. Darchuk
{"title":"Phase states and magnetic structure of superconducting inclusions in narrow-gap semiconductor matrices","authors":"S. Darchuk","doi":"10.1117/12.368346","DOIUrl":"https://doi.org/10.1117/12.368346","url":null,"abstract":"SQUID magnetic measurements have been performed on a series of PbTe narrow-gap semiconductors with n- and p-type conductivity in the field of temperatures 1.7-20 K and magnetic fields up to 1 Oe. Is shown that in a matrix PbTe are available microscopic inclusions of lead with the minimum sizes 1300 angstrom with concentration of atoms of lead in them N approximately (1 divided by 5) X 1018 cm-3 and phase transition characteristic for II type superconductor.","PeriodicalId":276773,"journal":{"name":"Material Science and Material Properties for Infrared Optics","volume":"64 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-11-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123818324","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Spontaneous IR intersublevel emission from quantum dots conditioned by main interband lasing 由主带间激光控制的量子点自发红外亚能级发射
Material Science and Material Properties for Infrared Optics Pub Date : 1999-11-04 DOI: 10.1117/12.368363
L. Vorobjev, D. Firsov, V. Shalygin, V. Tulupenko, Y. Shernyakov, A. Egorov, A. Zhukov, A. Kovsh, P. Kop’ev, I. Kochnev, N. Ledentsov, M. Maximov, V. Ustinov, Z. Alferov
{"title":"Spontaneous IR intersublevel emission from quantum dots conditioned by main interband lasing","authors":"L. Vorobjev, D. Firsov, V. Shalygin, V. Tulupenko, Y. Shernyakov, A. Egorov, A. Zhukov, A. Kovsh, P. Kop’ev, I. Kochnev, N. Ledentsov, M. Maximov, V. Ustinov, Z. Alferov","doi":"10.1117/12.368363","DOIUrl":"https://doi.org/10.1117/12.368363","url":null,"abstract":"The physical mechanism for creation of intraband population inversion between levels of quantum dots under injection of electron-hole pairs of suggested. The method is based on employment of generation of interband radiation providing fast depopulation of quantum dot ground level. Spontaneous far-IR radiation from diode laser structures with InGaAs/AlGaAs quantum dots connected with intraband hole and/or electron transitions between levels of size quantization in quantum dots was found and investigated for the first time. Spontaneous far-IR radiation is observed only under simultaneous generation of stimulated near-IR radiation connected with interband carrier transitions. Far- IR emission is observed also from laser structures with InGaAs/GaAs quantum wells. Intensity of this radiation is about of order less then intensity of radiation from structures with quantum dots. Qualitative explanations of phenomena observed are proposed.","PeriodicalId":276773,"journal":{"name":"Material Science and Material Properties for Infrared Optics","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-11-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121178156","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Epitaxial layer CdHgTe stress influence on diffusion impurities during creation of photodetectors 外延层CdHgTe应力对光电探测器制备过程中杂质扩散的影响
Material Science and Material Properties for Infrared Optics Pub Date : 1999-11-04 DOI: 10.1117/12.368407
L. Monastyrskii
{"title":"Epitaxial layer CdHgTe stress influence on diffusion impurities during creation of photodetectors","authors":"L. Monastyrskii","doi":"10.1117/12.368407","DOIUrl":"https://doi.org/10.1117/12.368407","url":null,"abstract":"We have investigated changing of diffusion migration through thin heteroepitaxial layers of cadmium-mercury-telluride under stress influence, which have created by differences between thermal extension coefficients of layers and substrate. We have analyzed by numerical experiment cases homogeneous and exponential mechanical stress in 2 and 3 layers structure. It was studied the time evolution of diffusion concentration profiles of impurity through epitaxial layers under influence of different mechanical stresses.","PeriodicalId":276773,"journal":{"name":"Material Science and Material Properties for Infrared Optics","volume":"80 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-11-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128269821","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Modulation spectroscopic approach to the study of photocurrent spectra in GaAs/GaAlAs QW-GRIN laser structures 调制光谱法研究GaAs/GaAlAs QW-GRIN激光结构的光电流谱
Material Science and Material Properties for Infrared Optics Pub Date : 1999-11-04 DOI: 10.1117/12.368332
K. Herrmann, J. Tomm, H. Al-Otaibi
{"title":"Modulation spectroscopic approach to the study of photocurrent spectra in GaAs/GaAlAs QW-GRIN laser structures","authors":"K. Herrmann, J. Tomm, H. Al-Otaibi","doi":"10.1117/12.368332","DOIUrl":"https://doi.org/10.1117/12.368332","url":null,"abstract":"The current transport through GaAs/GaAlAs quantum well graded index (QW GRIN) injection lasers was studied by photocurrent spectroscopy. The quantum efficiency is assumed to be proportional to the absorption coefficient. The observed absorption edges are attributed to transitions between different QW subbands. Measurements have been carried out with transverse electric (TE) and transverse magnetic (TM) light polarization in order to study the anisotropy due tot eh quantum well and the influence of the GRIN waveguide. Different spectroscopic modes have been compared, among them a setup with rotating polarizer. After background subtraction the observed edges can be compared with existing theories. The factors affecting the lineform are outlined.","PeriodicalId":276773,"journal":{"name":"Material Science and Material Properties for Infrared Optics","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-11-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128039131","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Planar waveguide phase matching for backward parametric oscillation 后向参量振荡的平面波导相位匹配
Material Science and Material Properties for Infrared Optics Pub Date : 1999-11-04 DOI: 10.1117/12.368396
V. Voevodin, O. Leontieva
{"title":"Planar waveguide phase matching for backward parametric oscillation","authors":"V. Voevodin, O. Leontieva","doi":"10.1117/12.368396","DOIUrl":"https://doi.org/10.1117/12.368396","url":null,"abstract":"Backward parametric oscillation (BWO) is of very interest for developing of mirrorless parametric frequency converters in actual mid-IR range. The aim of our investigation is to continue the analysis of possibility of realizing phase matched BWO in planar nonlinear optical waveguides with various compositions and parameters. The carried out calculations show that with BWO in waveguides there are opposing factors to be considered, but phase matched solutions are found within wide range of mid-IR generation for mode orders rather small for such phenomena.","PeriodicalId":276773,"journal":{"name":"Material Science and Material Properties for Infrared Optics","volume":"3890 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-11-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129450112","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
New pyroactive structures for infrared optoelectronics 红外光电子学的新型火相结构
Material Science and Material Properties for Infrared Optics Pub Date : 1999-11-04 DOI: 10.1117/12.368418
I. Blonskij, V. F. Kosorotov, L. V. Shchedrina, L. V. Levash
{"title":"New pyroactive structures for infrared optoelectronics","authors":"I. Blonskij, V. F. Kosorotov, L. V. Shchedrina, L. V. Levash","doi":"10.1117/12.368418","DOIUrl":"https://doi.org/10.1117/12.368418","url":null,"abstract":"Basically new induced polar dielectric media with controlled polarization properties and possessing unique physical characteristics as compared with the true pyroelectrics are advanced for IR optoelectronics.On the base of these effective pyroactive structures a new class of pyroelectric sensor for measurements of intense and super-intense laser fluxes for the spectral range from visible to middle IR is proposed. The first type sensors - multifunctional pyroelectric converters, the second type - pyroelectric transmission-type power sensors. Because it is impossible to get a high transmission of the true pyroelectrics due to the spontaneous electric moment, sensors of the second type are the devices operating on the tertiary pyroelectric effect, that has been registered in non-pyroelectrics, too.","PeriodicalId":276773,"journal":{"name":"Material Science and Material Properties for Infrared Optics","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-11-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130565069","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Resonant generation of difference harmonics in heterostructures with closely space levels 空间能级紧密的异质结构中差谐波的共振产生
Material Science and Material Properties for Infrared Optics Pub Date : 1999-11-04 DOI: 10.1117/12.368389
A. Korovin, F. Vasko
{"title":"Resonant generation of difference harmonics in heterostructures with closely space levels","authors":"A. Korovin, F. Vasko","doi":"10.1117/12.368389","DOIUrl":"https://doi.org/10.1117/12.368389","url":null,"abstract":"The second order susceptibility for difference-frequency mixing in a heterostructures with closely spaced levels are considered. We have described both the excitations of electrons from the couple of levels to the single level and the transition from the ground level to the couple of closely spaced levels. Parameters of the structures under consideration correspond to excitation by CO2 laser and the photon energy for difference harmonic is around 10-20 meV.","PeriodicalId":276773,"journal":{"name":"Material Science and Material Properties for Infrared Optics","volume":"113 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-11-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131690995","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Radiation properties of zinc diphosphide and their influence on infrared absorption 二磷化锌的辐射特性及其对红外吸收的影响
Material Science and Material Properties for Infrared Optics Pub Date : 1999-11-04 DOI: 10.1117/12.368416
A. Groza, D. Korbutiak, E. Korbut, A. Kudin, V. I. Kutz, V. Opilat, M. Pinkovska, V. Tartachnik
{"title":"Radiation properties of zinc diphosphide and their influence on infrared absorption","authors":"A. Groza, D. Korbutiak, E. Korbut, A. Kudin, V. I. Kutz, V. Opilat, M. Pinkovska, V. Tartachnik","doi":"10.1117/12.368416","DOIUrl":"https://doi.org/10.1117/12.368416","url":null,"abstract":"Studying of simple and complex defects in zinc diphosphide after ionizing irradiation has been carried out. ZnP2 crystals of (alpha) - and (beta) -modification have been irradiated by (gamma) -rays of Co60, electrons and reactor's neutrons. Electrical and optical characteristics of initial, irradiated at different temperatures and annealed samples have been measured. From the analysis of experimental and literary dates it is clear that phosphorous chains in zinc diphosphide possess low radiation resistance and main optically active centers are induced by fast particles to phosphorous quasi-molecules.","PeriodicalId":276773,"journal":{"name":"Material Science and Material Properties for Infrared Optics","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-11-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130221718","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
首页 上一页 下一页 尾页
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整，为了账户安全，请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们：info@booksci.cn Book学术提供免费学术资源搜索服务，方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号：604180095
Book学术官方微信