发布求助
文献互助 智能选刊 最新文献

Material Science and Material Properties for Infrared Optics最新文献

筛选
英文 中文
Physical effects caused by superluminal transfer of information 由超光速信息传递引起的物理效应
Material Science and Material Properties for Infrared Optics Pub Date : 1999-11-04 DOI: 10.1117/12.368376
V. P. Oleinik
{"title":"Physical effects caused by superluminal transfer of information","authors":"V. P. Oleinik","doi":"10.1117/12.368376","DOIUrl":"https://doi.org/10.1117/12.368376","url":null,"abstract":"The contribution of superluminal excitations to the potential and vortex components of the potentials and electric and magnetic field strengths of electromagnetic field is considered. It is noted that imposing the boundary conditions, corresponding to a combination of retarded and advanced interactions, on the solution of the equations of electrodynamics enables one to explain the result of Kosyrev's observations, according to which for any space object three images registered by earthly detectors are available. The effect of relativity of physical processes caused by instantaneous signals is discussed. It is shown that this effect presents a way of predicting the behavior of ap physical system in future, provided its evolution is strictly determined. According to the results received, the abnormal optical phenomena, arising in the immediate vicinity of plasma flows, are natural manifestations of the own fields surrounding these flows. The mechanism of interaction-at-a-distance between bodies, caused by the instantaneous transfer of excitations of the own fie of charged particles, is considered. It is shown that because of the presence of the tail of electrons' wave function and of the own field, transmitting signals with superluminal sped, the photon teleportation is possible. The Principle of Self-Organization is formulated that operates the world and creates all its variety.","PeriodicalId":276773,"journal":{"name":"Material Science and Material Properties for Infrared Optics","volume":"99 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-11-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115739964","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Experimental investigations of electric current under transverse and longitudinal electric field in uniaxially deformed p-Ge 单轴变形p-Ge中横向和纵向电场作用下电流的实验研究
Material Science and Material Properties for Infrared Optics Pub Date : 1999-11-04 DOI: 10.1117/12.368355
A. Abramov, V. Akimov, A. Dalakyan, V. Tulupenko, A. Zaitsev, S. Danilov, D. Firsov, V. Shalygin
{"title":"Experimental investigations of electric current under transverse and longitudinal electric field in uniaxially deformed p-Ge","authors":"A. Abramov, V. Akimov, A. Dalakyan, V. Tulupenko, A. Zaitsev, S. Danilov, D. Firsov, V. Shalygin","doi":"10.1117/12.368355","DOIUrl":"https://doi.org/10.1117/12.368355","url":null,"abstract":"Comparison between cases of longitudinal and transverse directions of uniaxial pressure and strong electric field, affected the bulk hole germanium, to use it for lasting in far IR region has been carried out. Conclusion about preference of crossed directions is made. Threshold pressure, at which stimulated radiation arises, independence of crystallographic direction, along which external influences are applied, is also discussed. The results of experimental investigations of the crossed directions of uniaxial pressure and electric current are given.","PeriodicalId":276773,"journal":{"name":"Material Science and Material Properties for Infrared Optics","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-11-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115198322","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Photoconductivity kinetics and the nature of Yb-induced defect states in Pb1-xGexTe alloys Pb1-xGexTe合金中yb诱导缺陷态的光导动力学和性质
Material Science and Material Properties for Infrared Optics Pub Date : 1999-11-04 DOI: 10.1117/12.368380
E. Skipetrov, N. Chernova, E. I. Slyn'ko, Y. Vygranenko
{"title":"Photoconductivity kinetics and the nature of Yb-induced defect states in Pb1-xGexTe alloys","authors":"E. Skipetrov, N. Chernova, E. I. Slyn'ko, Y. Vygranenko","doi":"10.1117/12.368380","DOIUrl":"https://doi.org/10.1117/12.368380","url":null,"abstract":"In this paper galvanomagnetic properties and photoconductivity kinetics in Pb1-xGexTe alloys doped with Yb were investigated. The existing of Yb-induced level near the valence band top was established. High photosensitivity at temperature under 30 K and the effect of persistent photoconductivity at helium temperature were found. The photoconductivity kinetics revealed two types of relaxation processes: a fast one and a long duration one, that was explained assuming that doping with Yb leads to the formation of reconstructing Jahn-Teller centers in Pb1-xGexTe alloys.","PeriodicalId":276773,"journal":{"name":"Material Science and Material Properties for Infrared Optics","volume":"2015 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-11-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121397619","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Optical properties of Hg1-xCdxTe/CdTe epitaxial films with graded band gap 梯度带隙Hg1-xCdxTe/CdTe外延薄膜的光学性质
Material Science and Material Properties for Infrared Optics Pub Date : 1999-11-04 DOI: 10.1117/12.368334
Z. F. Ivasiv, V. Tetyorkin, F. Sizov, V. Petryakov
{"title":"Optical properties of Hg1-xCdxTe/CdTe epitaxial films with graded band gap","authors":"Z. F. Ivasiv, V. Tetyorkin, F. Sizov, V. Petryakov","doi":"10.1117/12.368334","DOIUrl":"https://doi.org/10.1117/12.368334","url":null,"abstract":"The IR transmission spectra of HgCdTe epitaxial films grown on CdTe substrates were measured. The films investigated contain an exponential composition gradient. Optical density D vs the photon energy (omega) are analyzed both theoretically and experimentally. Theoretical calculations of D((omega) ) spectra were performed in the framework of the WKB approximation. The composition profile has been obtained from the fitting procedure. In order to reduce the total amount of the fitting parameters as well as to improve the accuracy of this procedure the differentiation of the D((omega) ) curves were performed.","PeriodicalId":276773,"journal":{"name":"Material Science and Material Properties for Infrared Optics","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-11-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121500075","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Assessment of HgCdTe photodiodes and quantum well infrared photoconductors for long-wavelength focal plane arrays 长波长焦平面阵列中HgCdTe光电二极管和量子阱红外光电导体的评估
Material Science and Material Properties for Infrared Optics Pub Date : 1999-11-04 DOI: 10.1117/12.368341
A. Rogalski
{"title":"Assessment of HgCdTe photodiodes and quantum well infrared photoconductors for long-wavelength focal plane arrays","authors":"A. Rogalski","doi":"10.1117/12.368341","DOIUrl":"https://doi.org/10.1117/12.368341","url":null,"abstract":"This paper compares the technical merits of two IR detector arrays technologies; photovoltaic HgCdTe and quantum well IR photoconductors (QWIPs). It is clearly shown that long wavelength IR (LWIR) QWIP can not complete with HgCdTe photodiode as the single device especially at higher temperature operation due to fundamental limitations associated with intersubband transitions. However, the advantage of HgCdTe is less distinct in temperature range below 50 K due to problems involved in a HgCdTe material. Even though that QWIP is a photoconductor, several its properties such as high impedance, fast response time, long integration time, and low power consumption, well comply requirements of fabrication large focal plane arrays. Due to the high material quality at low temperature, QWIP has potential advantages over HgCdTe for very LWIR FPA applications in terms of the array size, uniformity, yield and cost of the systems.","PeriodicalId":276773,"journal":{"name":"Material Science and Material Properties for Infrared Optics","volume":"49 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-11-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126545120","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 23
Comparative study of bulk Hg0.8Cd0.2Te crystals grown from initial components of varying purity 由不同纯度初始组分生长的大块Hg0.8Cd0.2Te晶体的比较研究
Material Science and Material Properties for Infrared Optics Pub Date : 1999-11-04 DOI: 10.1117/12.368413
K. Kurbanov, V. Bogoboyashchiy
{"title":"Comparative study of bulk Hg0.8Cd0.2Te crystals grown from initial components of varying purity","authors":"K. Kurbanov, V. Bogoboyashchiy","doi":"10.1117/12.368413","DOIUrl":"https://doi.org/10.1117/12.368413","url":null,"abstract":"Bulk Hg0.8Cd0.2Te crystals still are widely used as a base material for manufacturing IR photoreceivers for the 8-14 micrometers wavelengths range. As these purposes need the material with high mobility of electrons and very low concentration of impurities, problems of purity of the components, used for preparation of it, acquire prime significance.","PeriodicalId":276773,"journal":{"name":"Material Science and Material Properties for Infrared Optics","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-11-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128108541","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Dielectric function of nonlinear metal composite with double-layer ellipsoidal inclusions 含双层椭球夹杂的非线性金属复合材料介电函数
Material Science and Material Properties for Infrared Optics Pub Date : 1999-11-04 DOI: 10.1117/12.368388
L. Grechko, O. Davydova, V. Malnev
{"title":"Dielectric function of nonlinear metal composite with double-layer ellipsoidal inclusions","authors":"L. Grechko, O. Davydova, V. Malnev","doi":"10.1117/12.368388","DOIUrl":"https://doi.org/10.1117/12.368388","url":null,"abstract":"The nonlinear dielectric properties of heterogeneous material are intensively studied during last time. It was discovered the effect of enormous enhancement for non-linear optical responses in composite material containing metal particles as inclusions. These metal particles are much smaller than a wavelength of the electromagnetic radiation but large enough to be considered a bulk material. Their typical size is several nonometers.","PeriodicalId":276773,"journal":{"name":"Material Science and Material Properties for Infrared Optics","volume":"2004 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-11-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133906613","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Infrared absorption and dielectric properties of Li-Cu ferrite Li-Cu铁氧体的红外吸收和介电性能
Material Science and Material Properties for Infrared Optics Pub Date : 1999-11-04 DOI: 10.1117/12.368371
S. Mazen
{"title":"Infrared absorption and dielectric properties of Li-Cu ferrite","authors":"S. Mazen","doi":"10.1117/12.368371","DOIUrl":"https://doi.org/10.1117/12.368371","url":null,"abstract":"The mixed ferrites Li0.5-0.5xCuxFe2.5-0.5x were prepared by the ceramic method. IR absorption and dielectric properties were used to investigate this ferrite. The IR spectra in the range from 200-1000 cm-1 were reported. Mainly, tow bands were observed.","PeriodicalId":276773,"journal":{"name":"Material Science and Material Properties for Infrared Optics","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-11-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114460227","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 30
Key issues in substrate and liquid phase epitaxy of Hg1-xCdxTe from Hg-rich and Te-rich solutions 富氢和富te溶液中Hg1-xCdxTe衬底和液相外延的关键问题
Material Science and Material Properties for Infrared Optics Pub Date : 1999-11-04 DOI: 10.1117/12.368392
S. Gupta
{"title":"Key issues in substrate and liquid phase epitaxy of Hg1-xCdxTe from Hg-rich and Te-rich solutions","authors":"S. Gupta","doi":"10.1117/12.368392","DOIUrl":"https://doi.org/10.1117/12.368392","url":null,"abstract":"In this paper we review the key issues in CdTe substrate which influence the quality of mercury cadmium telluride epilayer grown by liquid phase epitaxy. The issues are crystallinity, defects such as tellurium precipitates and impurities. We discuss the conditions to grow good quality epilayers of Hg1-xCdxTe from Hg-rich and Te-rich solutions at 470 degrees C. The physical parameters such as surface morphology, composition, thickness, x-ray full width at half maximum and broadening parameter from electrolyte electroreflectance obtained in two cases are compared. It is shown that epilayers grown form Hg-rich solution have, better surface morphology, lower growth rate and crystallinity and broadening parameter similar to layers grown form Te-rich solution. Compositionally epilayers grown form Te-rich solution are more uniform. The quality of an epilayer grown form Te-rich solution deteriorates faster than grown from Hg-rich solution when the cooling rate is increased in excess of 2 degrees C/h.","PeriodicalId":276773,"journal":{"name":"Material Science and Material Properties for Infrared Optics","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-11-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116952102","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Electronic band parameters: obtaining and peculiarities of InSb1-xBix crystal structures 电子能带参数:InSb1-xBix晶体结构的获取及其特性
Material Science and Material Properties for Infrared Optics Pub Date : 1999-11-04 DOI: 10.1117/12.368384
I. Rarenko, J. I. Vyklyuk, V. Deibuk, S. G. Dremluzhenko, Z. Zakharuk, S. M. Nichyi
{"title":"Electronic band parameters: obtaining and peculiarities of InSb1-xBix crystal structures","authors":"I. Rarenko, J. I. Vyklyuk, V. Deibuk, S. G. Dremluzhenko, Z. Zakharuk, S. M. Nichyi","doi":"10.1117/12.368384","DOIUrl":"https://doi.org/10.1117/12.368384","url":null,"abstract":"InSb1-xBix solid solutions monocrystal structures with (Delta) Eg80K equals 0,12eV were obtained using the modified Czochralski, zone and laser melting methods. A band structure of semiconductor InSb1-xBix substitution solid solution is calculated by the empirical pseudopotential method. Spin-orbital interactions are also included in local calculations. Using the virtual-crystal approximation the composition and temperature dependencies of energy gap are studied. The results are in good agreement with available experimental data.","PeriodicalId":276773,"journal":{"name":"Material Science and Material Properties for Infrared Optics","volume":"58 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-11-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123633823","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
下一页 尾页
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整，为了账户安全，请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们：info@booksci.cn Book学术提供免费学术资源搜索服务，方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号：604180095
Book学术官方微信