Photoconductivity kinetics and the nature of Yb-induced defect states in Pb1-xGexTe alloys

E. Skipetrov, N. Chernova, E. I. Slyn'ko, Y. Vygranenko
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Abstract

In this paper galvanomagnetic properties and photoconductivity kinetics in Pb1-xGexTe alloys doped with Yb were investigated. The existing of Yb-induced level near the valence band top was established. High photosensitivity at temperature under 30 K and the effect of persistent photoconductivity at helium temperature were found. The photoconductivity kinetics revealed two types of relaxation processes: a fast one and a long duration one, that was explained assuming that doping with Yb leads to the formation of reconstructing Jahn-Teller centers in Pb1-xGexTe alloys.
Pb1-xGexTe合金中yb诱导缺陷态的光导动力学和性质
研究了掺杂Yb的Pb1-xGexTe合金的动磁性能和光电导动力学。证实了价带顶部附近存在镱诱导能级。在30 K温度下具有较高的光敏性,在氦温度下具有持久的光导电性。光导动力学揭示了两种类型的弛豫过程:一种是快速弛豫过程,一种是长时间弛豫过程,这可以解释为掺杂Yb导致Pb1-xGexTe合金中形成重建的Jahn-Teller中心。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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