I. Rarenko, J. I. Vyklyuk, V. Deibuk, S. G. Dremluzhenko, Z. Zakharuk, S. M. Nichyi
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Electronic band parameters: obtaining and peculiarities of InSb1-xBix crystal structures
InSb1-xBix solid solutions monocrystal structures with (Delta) Eg80K equals 0,12eV were obtained using the modified Czochralski, zone and laser melting methods. A band structure of semiconductor InSb1-xBix substitution solid solution is calculated by the empirical pseudopotential method. Spin-orbital interactions are also included in local calculations. Using the virtual-crystal approximation the composition and temperature dependencies of energy gap are studied. The results are in good agreement with available experimental data.
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