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Material Science and Material Properties for Infrared Optics最新文献

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p-to-n ion-beam milling conversion in specially doped CdxHg1-xTe 特殊掺杂CdxHg1-xTe的p- n离子束铣削转换
Material Science and Material Properties for Infrared Optics Pub Date : 1997-08-26 DOI: 10.1117/12.280463
I. Izhnin, A. Izhnin, K. Kurbanov, Bogdan B. Prytuljak
{"title":"p-to-n ion-beam milling conversion in specially doped CdxHg1-xTe","authors":"I. Izhnin, A. Izhnin, K. Kurbanov, Bogdan B. Prytuljak","doi":"10.1117/12.280463","DOIUrl":"https://doi.org/10.1117/12.280463","url":null,"abstract":"Ion beam milling effect on electrical properties of usual vacancy doped and especially In compensated p-CdxHg1-xTe has been investigated. In all cases after ion beam milling by low energy neutralized. Ar ions n-p structure with thickness of n-layers that depended on initial hole concentration and irradiation dose has been created. It was shown that in the usual vacancy doped CdxHg1-xTe the electron concentration in n-layers well agrees with concentration of residual donors. For the especially doped samples the electron concentration was determined by the In donor impurities' concentration. The possibility of the n-p+ CdxHg1-xTe photodiode fabrication with optimum required carriers' concentration both in n- and p-regions has been demonstrated by ion beam milling of the especially doped samples.","PeriodicalId":276773,"journal":{"name":"Material Science and Material Properties for Infrared Optics","volume":"46 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-08-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121563588","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Liquid phase epitaxial III-V technology for photodetectors manufacturing 用于光电探测器制造的液相外延III-V技术
Material Science and Material Properties for Infrared Optics Pub Date : 1997-08-26 DOI: 10.1117/12.280419
E. Venger, G. N. Semenova, T. Kryshtab, P. M. Lytvin, S. Krukovskii, R. Merker
{"title":"Liquid phase epitaxial III-V technology for photodetectors manufacturing","authors":"E. Venger, G. N. Semenova, T. Kryshtab, P. M. Lytvin, S. Krukovskii, R. Merker","doi":"10.1117/12.280419","DOIUrl":"https://doi.org/10.1117/12.280419","url":null,"abstract":"The AlxGa1-xAs/GaAs heterostructures represent a potentially useful material for photodetectors with high efficiency in spectral range 0.4 divided by 0.9 micrometers . To produce the thermostable detectors with high radiation hardness on the base of liquid phase epitaxy (LPE) the physical and chemical foundation of such epilayers formation was developed. The abilities of LPE method wee improved due to utilization of multicomponent solution-melts with rare-earth additions. The horizontal sliding-boat step-cooled LPE technique with controlled composition of gaseous medium and additions of Yb in Bi and Ga-Bi-Al solution-melts was used as the base of technology. As a result of our investigation the quickly responsive photodiodes with improved technical, exploitative and economical parameters were produced.","PeriodicalId":276773,"journal":{"name":"Material Science and Material Properties for Infrared Optics","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-08-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127751819","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Magnetic field-induced prolonged changes of electric parameters of infrared MOS-photodetectors 磁场对红外mos光电探测器电参数变化的影响
Material Science and Material Properties for Infrared Optics Pub Date : 1997-08-26 DOI: 10.1117/12.280442
A. Voitsekhovskii, V. Davydov, S. Nesmelov
{"title":"Magnetic field-induced prolonged changes of electric parameters of infrared MOS-photodetectors","authors":"A. Voitsekhovskii, V. Davydov, S. Nesmelov","doi":"10.1117/12.280442","DOIUrl":"https://doi.org/10.1117/12.280442","url":null,"abstract":"Influence of a weak magnetic field on photo-electric, electrophysical characteristics of MIS - structures is experimentally investigated.Long-term changes of a spectrum of surface states of Si-SiO2-structures, caused by a magnetic field are considered. It is supposed that the reason of a long-term relaxation in Si-SiO2 - structures are a diffusion and reactions of nonequilibrium defects, arising at relaxations of polarization of nuclear spin system, in InSb, InAs the diffusion passes on mechanism of transfer of defect of a type 'broken off connection'.","PeriodicalId":276773,"journal":{"name":"Material Science and Material Properties for Infrared Optics","volume":"126 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-08-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127989629","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Epitaxial structures based on narrow band-gap InAs1-x-ySbxBiy solid solutions 基于窄带隙InAs1-x-ySbxBiy固溶体的外延结构
Material Science and Material Properties for Infrared Optics Pub Date : 1997-08-26 DOI: 10.1117/12.280459
R. Akchurin, V. Zhegalin, T. Sakharova, S. Seregin
{"title":"Epitaxial structures based on narrow band-gap InAs1-x-ySbxBiy solid solutions","authors":"R. Akchurin, V. Zhegalin, T. Sakharova, S. Seregin","doi":"10.1117/12.280459","DOIUrl":"https://doi.org/10.1117/12.280459","url":null,"abstract":"The technique of InAs1-x-ySbxBiy/InSb heterostructures forming by LPE was developed to obtain semiconductor material with intrinsic absorption edge (gamma) > 8 micrometers at 77K. Smooth epilayers with x equals 0.88-0.97 and y equals 0.0016-0.0036 were grown on InSb(111)A substrates in 380 450 degrees C temperature range. Eg(77K) values, obtained from optical absorption spectra measurements, were found to decrease by 0.017-0.020 eV as compared to InAs1-xSbx with the same x. The possibilities of InAs1-x-ySbxBiy/InSb strained multilayer heterostructures as semiconductor material for long- wavelength applications have been analyzed. Results of our calculation demonstrate that the strain-induced energy band- gap shift in such structures enables the attainment of 0.07- 0.15 eV Eg values at 77K for 0.82 < x < 0.94 composition range. The obtaining of strained multilayer heterostructures with layer thickness 1-x-ySbxBiy/InSb1-yBiy/InSb multilayer heterostructures with epilayer thicknesses from 0.05 to 0.2 micrometers depending on growth conditions can be successfully obtained by LPE.","PeriodicalId":276773,"journal":{"name":"Material Science and Material Properties for Infrared Optics","volume":"352 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-08-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132561452","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Ellipsometry and Raman spectroscopy of MBE-grown undoped Si-Si0.78Ge0.22/(001)Si superlattices mbe生长未掺杂Si- si0.78 ge0.22 /(001)Si超晶格的椭圆偏振和拉曼光谱
Material Science and Material Properties for Infrared Optics Pub Date : 1997-08-26 DOI: 10.1117/12.280430
O. Mironov, P. Phillips, Evan H. C. Parker, M. Mironov, V. Gnezdilov, V. Ushakov, V. Eremenko
{"title":"Ellipsometry and Raman spectroscopy of MBE-grown undoped Si-Si0.78Ge0.22/(001)Si superlattices","authors":"O. Mironov, P. Phillips, Evan H. C. Parker, M. Mironov, V. Gnezdilov, V. Ushakov, V. Eremenko","doi":"10.1117/12.280430","DOIUrl":"https://doi.org/10.1117/12.280430","url":null,"abstract":"Spectroscopic ellipsometry and Raman spectroscopy have ben sued to characterize Si/Si0.78Ge0.22 superlattices grown by molecular beam epitaxy at different substrate temperatures, 550 degrees C < Ts < 810 degrees C. The result are interpreted to give information on material and interface quality, layer thicknesses, and state of strain, and are in good agreement with XRD, SIMS and RBS investigations. The observed frequencies of zone-folded longitudinal acoustic phonons in a high quality sample agree well with those calculated using Rytov's theory of acoustic vibrations in layered media.","PeriodicalId":276773,"journal":{"name":"Material Science and Material Properties for Infrared Optics","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-08-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115372740","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Kinetics of photoconductivity and metastable electronic states in Pb1-xMnxTe(In) solid solutions Pb1-xMnxTe(in)固溶体的光电导率和亚稳电子态动力学
Material Science and Material Properties for Infrared Optics Pub Date : 1997-08-26 DOI: 10.1117/12.280431
B. Akimov, A. V. Albul, S. Ponomarev, L. Ryabova
{"title":"Kinetics of photoconductivity and metastable electronic states in Pb1-xMnxTe(In) solid solutions","authors":"B. Akimov, A. V. Albul, S. Ponomarev, L. Ryabova","doi":"10.1117/12.280431","DOIUrl":"https://doi.org/10.1117/12.280431","url":null,"abstract":"The most important features of Pb1-xMnxTe(In) solid solutions are the effect of Fermi level (FL) pinning and the existence of metastable electronic states resulting in the appearance of the relaxation processes of long duration. The increase of MnTe content in Pb1-xMnxTe(In) leads to the shift of pinned FL towards the conduction band edge Ec and metal-dielectric transition at X approximately 0.05. The kinetic processes under the radiation of Pb1-xMnxTe(In) single crystals have been investigated in the temperature range 4.2-35 K. It has been found that under the composition X variation the view of kinetic curves changes qualitatively. At X 1 of the impurity center together with the ground one E2 is assumed. It is shown, that if the shift of E1 and E2 levels relatively to Ec is characterized by the linear dependence on X, the fast relaxation appears near the point when E1 level crosses Ec and enters the energy gap.","PeriodicalId":276773,"journal":{"name":"Material Science and Material Properties for Infrared Optics","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-08-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114464133","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Novel photovoltaic and bicolor GaAs/AlGaAs quantum well infrared detector 新型光电双色GaAs/AlGaAs量子阱红外探测器
Material Science and Material Properties for Infrared Optics Pub Date : 1997-08-26 DOI: 10.1117/12.280469
Zheng-hao Chen, Zhenyu Yuan, Jianwei Ma, D. Cui
{"title":"Novel photovoltaic and bicolor GaAs/AlGaAs quantum well infrared detector","authors":"Zheng-hao Chen, Zhenyu Yuan, Jianwei Ma, D. Cui","doi":"10.1117/12.280469","DOIUrl":"https://doi.org/10.1117/12.280469","url":null,"abstract":"A new type of step quantum well IR detectors with electron Bragg reflectors in the barrier regions has be proposed. The Bragg reflector is consisted of special square well and help to form the highly localized quasibound states in the extended states above the barrier height. Using the transfer matrix method, the complex eigen-energies, corresponding eigen-wavefunctions, and oscillator strengths was calculated. Theoretical analyses indicate that this kind of structure has great facility to realize bicolor optical transitions and transport asymmetry of photocurrent.","PeriodicalId":276773,"journal":{"name":"Material Science and Material Properties for Infrared Optics","volume":"91 10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-08-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116251380","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Infrared thermal detectors versus photon detectors: I. Pixel performance 红外热探测器与光子探测器:1 .像素性能
Material Science and Material Properties for Infrared Optics Pub Date : 1997-08-26 DOI: 10.1117/12.280417
A. Rogalski
{"title":"Infrared thermal detectors versus photon detectors: I. Pixel performance","authors":"A. Rogalski","doi":"10.1117/12.280417","DOIUrl":"https://doi.org/10.1117/12.280417","url":null,"abstract":"Investigations of the performance of IR thermal detectors as compared to photon detectors are presented. Due to fundamental different types of noise, these two classes of detectors have different dependencies of detectivities on wavelength and temperature. The photon detectors are favored at long wavelength IR and lower operating temperatures. The thermal detectors are favored at very long wavelength spectral range. The comparative studies of the thermal detectors with HgCdTe photodiodes, doped silicon detectors and quantum well IR photodetectors are carried out. In comparison with Kruse's paper these studies are re-examined taking into account updated theories of different types of detectors. The considerations are made for different background levels.","PeriodicalId":276773,"journal":{"name":"Material Science and Material Properties for Infrared Optics","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-08-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130553724","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 14
Sensitivity of two-dimensional electron gas to far infrared radiation 二维电子气体对远红外辐射的灵敏度
Material Science and Material Properties for Infrared Optics Pub Date : 1997-08-26 DOI: 10.1117/12.280421
A. Dmitriev, G. Lashkarev, Z. Kovalyuk
{"title":"Sensitivity of two-dimensional electron gas to far infrared radiation","authors":"A. Dmitriev, G. Lashkarev, Z. Kovalyuk","doi":"10.1117/12.280421","DOIUrl":"https://doi.org/10.1117/12.280421","url":null,"abstract":"The strong photoeffect was discovered experimentally in specially doped InSe crystals at temperature 4.2 K as a result of laser radiation action at fixed wave-lengths of 337 and 195 microns.Also some of the kinetic, galvanomagnetic and optical anomalies had been observed. They are explained by appearance of the gap E in the conduction band continuum of degenerated 2D semiconductor in charge density waves state. The long wave threshold of photocurrent was found to depend strongly on a magnitude of electric current through the crystal. A rough estimation gives a value dE/dJ approximately 0.4 meV/mA. We had carried out experiments in order to study instabilities of InSe electrical properties in temperature range 4.2 approximately 300 K by quasi stationary conditions. Abrupt electrical resistivity increases about 5 times were observed by us at temperatures 5, 10, 14, 27, 31, 170 and 200 K. The frequency dispersion of conductivity for high frequencies were observed.","PeriodicalId":276773,"journal":{"name":"Material Science and Material Properties for Infrared Optics","volume":"3182 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-08-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130560998","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Percolation effects in Pb1-xGexTe solid solutions Pb1-xGexTe固溶体的渗透效应
Material Science and Material Properties for Infrared Optics Pub Date : 1997-08-26 DOI: 10.1117/12.280458
E. Rogacheva, V. Pinegin, Tavrina V. Tat'yana
{"title":"Percolation effects in Pb1-xGexTe solid solutions","authors":"E. Rogacheva, V. Pinegin, Tavrina V. Tat'yana","doi":"10.1117/12.280458","DOIUrl":"https://doi.org/10.1117/12.280458","url":null,"abstract":"The concentration dependences of unit cell parameter, the x- ray liens width, microhardness, electrical conductivity and the Seebeck coefficient for the Pb2-xGexTe alloys were obtained. Anomalies of physical properties were revealed in the range of x approximately equals 0.008-0.02. The obtained results prove existence of concentration phase transitions occurring in any solid solution and are associated with percolation effects in impurity subsystem of crystal when percolation threshold is reached.","PeriodicalId":276773,"journal":{"name":"Material Science and Material Properties for Infrared Optics","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-08-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122512248","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
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