{"title":"新型光电双色GaAs/AlGaAs量子阱红外探测器","authors":"Zheng-hao Chen, Zhenyu Yuan, Jianwei Ma, D. Cui","doi":"10.1117/12.280469","DOIUrl":null,"url":null,"abstract":"A new type of step quantum well IR detectors with electron Bragg reflectors in the barrier regions has be proposed. The Bragg reflector is consisted of special square well and help to form the highly localized quasibound states in the extended states above the barrier height. Using the transfer matrix method, the complex eigen-energies, corresponding eigen-wavefunctions, and oscillator strengths was calculated. Theoretical analyses indicate that this kind of structure has great facility to realize bicolor optical transitions and transport asymmetry of photocurrent.","PeriodicalId":276773,"journal":{"name":"Material Science and Material Properties for Infrared Optics","volume":"91 10 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1997-08-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Novel photovoltaic and bicolor GaAs/AlGaAs quantum well infrared detector\",\"authors\":\"Zheng-hao Chen, Zhenyu Yuan, Jianwei Ma, D. Cui\",\"doi\":\"10.1117/12.280469\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A new type of step quantum well IR detectors with electron Bragg reflectors in the barrier regions has be proposed. The Bragg reflector is consisted of special square well and help to form the highly localized quasibound states in the extended states above the barrier height. Using the transfer matrix method, the complex eigen-energies, corresponding eigen-wavefunctions, and oscillator strengths was calculated. Theoretical analyses indicate that this kind of structure has great facility to realize bicolor optical transitions and transport asymmetry of photocurrent.\",\"PeriodicalId\":276773,\"journal\":{\"name\":\"Material Science and Material Properties for Infrared Optics\",\"volume\":\"91 10 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1997-08-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Material Science and Material Properties for Infrared Optics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1117/12.280469\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Material Science and Material Properties for Infrared Optics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1117/12.280469","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Novel photovoltaic and bicolor GaAs/AlGaAs quantum well infrared detector
A new type of step quantum well IR detectors with electron Bragg reflectors in the barrier regions has be proposed. The Bragg reflector is consisted of special square well and help to form the highly localized quasibound states in the extended states above the barrier height. Using the transfer matrix method, the complex eigen-energies, corresponding eigen-wavefunctions, and oscillator strengths was calculated. Theoretical analyses indicate that this kind of structure has great facility to realize bicolor optical transitions and transport asymmetry of photocurrent.