Magnetic field-induced prolonged changes of electric parameters of infrared MOS-photodetectors

Abstract

Influence of a weak magnetic field on photo-electric, electrophysical characteristics of MIS - structures is experimentally investigated.Long-term changes of a spectrum of surface states of Si-SiO2-structures, caused by a magnetic field are considered. It is supposed that the reason of a long-term relaxation in Si-SiO2 - structures are a diffusion and reactions of nonequilibrium defects, arising at relaxations of polarization of nuclear spin system, in InSb, InAs the diffusion passes on mechanism of transfer of defect of a type 'broken off connection'.