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Material Science and Material Properties for Infrared Optics最新文献

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Exchange effects in electron-hole plasma in quantum well heterostructures under an electric field 电场作用下量子阱异质结构中电子-空穴等离子体的交换效应
Material Science and Material Properties for Infrared Optics Pub Date : 1999-11-04 DOI: 10.1117/12.368391
I. Fyodorov, V. Sokolov
{"title":"Exchange effects in electron-hole plasma in quantum well heterostructures under an electric field","authors":"I. Fyodorov, V. Sokolov","doi":"10.1117/12.368391","DOIUrl":"https://doi.org/10.1117/12.368391","url":null,"abstract":"Numerical calculations are presented for the electron-hole plasma density dependence of the ground-state subband energies and carrier's wave functions in GaAs/AlxGa1-xAs quantum-well heterostructure subjected an electric field. We show that both the Hartree and exchange interactions cause the electron and hole self-energies to highly depend on the plasma density. In contrast, only a weak dependence of the spatial extent of the wave functions, due to exchange interactions, on the plasma density has been found.Our calculations also reveal a strong competition between the exchange and Hartree interactions as a function of plasma density, that in general, depends on the electric field and quantum-well width. The results of numerical calculations of the band-gap renormalization due to many- body effects are used to infer the bistable behavior of the quantum-well heterostructures in an electric field under near band-gap photoexcitation.","PeriodicalId":276773,"journal":{"name":"Material Science and Material Properties for Infrared Optics","volume":"92 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-11-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133677566","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Molecular-beam epitaxial growth of CdZnTe/ZnTe QW structures and superlattices on GaAs (100) substrates for optoelectronics 光电子学用GaAs(100)衬底上CdZnTe/ZnTe QW结构和超晶格的分子束外延生长
Material Science and Material Properties for Infrared Optics Pub Date : 1999-11-04 DOI: 10.1117/12.368414
E. Venger, Y. G. Sadof’ev, G. N. Semenova, N. Korsunskaya, V. P. Klad'ko, B. Embergenov, L. Borkovskaya, M. P. Semtsiv, M. Sharibaev
{"title":"Molecular-beam epitaxial growth of CdZnTe/ZnTe QW structures and superlattices on GaAs (100) substrates for optoelectronics","authors":"E. Venger, Y. G. Sadof’ev, G. N. Semenova, N. Korsunskaya, V. P. Klad'ko, B. Embergenov, L. Borkovskaya, M. P. Semtsiv, M. Sharibaev","doi":"10.1117/12.368414","DOIUrl":"https://doi.org/10.1117/12.368414","url":null,"abstract":"The effect of the 5 nm thick ZnTe intermediate layers obtained by solid crystallization at growth temperature on the optical properties of ZnTe epilayers grown by molecular beam epitaxy (MBE) on (100) GaAs substrates has been investigated by low temperature photoluminescence and reflectance spectroscopy. Reduction of nonradiative center concentration and improvement of ZnTe epilayer photoluminescence characteristics have been achieved using of solid phase crystallized intermediate layers. At the same time defect depth nonuniformity was found to occur in ZnTe epilayers with and without such intermediate layers. Use of such surfactant layer and optimized technology conditions on early stage of growth makes possible to obtain CdZnTe/ZnTe quantum wells and super lattices with high luminescence efficiency for further application.","PeriodicalId":276773,"journal":{"name":"Material Science and Material Properties for Infrared Optics","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-11-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117110970","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Photoresponse in nonuniform semiconductor junctions under infrared laser excitation 红外激光激励下非均匀半导体结的光响应
Material Science and Material Properties for Infrared Optics Pub Date : 1999-11-04 DOI: 10.1117/12.368343
S. Ašmontas, J. Gradauskas, D. Seliuta, E. Sirmulis
{"title":"Photoresponse in nonuniform semiconductor junctions under infrared laser excitation","authors":"S. Ašmontas, J. Gradauskas, D. Seliuta, E. Sirmulis","doi":"10.1117/12.368343","DOIUrl":"https://doi.org/10.1117/12.368343","url":null,"abstract":"The peculiarities of a photovoltaic effect in Ti/n-Si Schottky contact and GaAs n-n+ junction at excitation wavelengths 10.6 micrometers , 2.8 micrometers and 2 micrometers has been investigated experimentally. When the incident photon hv energy is lower than Schottky barrier height the photoresponse nonlinearly depends on laser intensity. The results are interpreted by electron emission over the barrier due to multiphoton and multistep excitation. When hv is greater than the diffusion potential of GaAs n-n+ junction a linear relation between the photovoltage and the laser intensity is observed.","PeriodicalId":276773,"journal":{"name":"Material Science and Material Properties for Infrared Optics","volume":"52 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-11-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121056974","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Galvanomagnetic and optical properties of CdTe wafers for substrates 基片用碲化镉晶圆的磁、光特性
Material Science and Material Properties for Infrared Optics Pub Date : 1999-11-04 DOI: 10.1117/12.368360
V. Bogoboyashchiy
{"title":"Galvanomagnetic and optical properties of CdTe wafers for substrates","authors":"V. Bogoboyashchiy","doi":"10.1117/12.368360","DOIUrl":"https://doi.org/10.1117/12.368360","url":null,"abstract":"Far IR engineering finds more and more broad applications in the most various purposes, for example, for monitoring technological processes, environment monitoring, in medicine, etc. Last year the significant successes are reached in the technology of matrix photoreceivers basing on an application of monocrystalline epitaxial films of p-type monocrystalline narrow-gap solid solutions, MCT, having a number of advantages on comparison to bulk MCT.","PeriodicalId":276773,"journal":{"name":"Material Science and Material Properties for Infrared Optics","volume":"46 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-11-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132143691","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Photoelectric characteristics of the epitaxial film CdxHg1-xTe grown by molecular beam epitaxy 分子束外延生长CdxHg1-xTe外延膜的光电特性
Material Science and Material Properties for Infrared Optics Pub Date : 1999-11-04 DOI: 10.1117/12.368354
A. Voitsekhovskii, Yu. A. Denisov, A. Kokhanenko
{"title":"Photoelectric characteristics of the epitaxial film CdxHg1-xTe grown by molecular beam epitaxy","authors":"A. Voitsekhovskii, Yu. A. Denisov, A. Kokhanenko","doi":"10.1117/12.368354","DOIUrl":"https://doi.org/10.1117/12.368354","url":null,"abstract":"The results of measurements of lifetime of charge carriers in epitaxial structures based on narrow gap Hg1-xCdxTe, grown by a method molecular-beam epitaxy are resulted at pulsing excitation by radiation on various lengths of waves.","PeriodicalId":276773,"journal":{"name":"Material Science and Material Properties for Infrared Optics","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-11-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130518936","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Electrochemical process of n-Si photonic structure formation n-Si光子结构形成的电化学过程
Material Science and Material Properties for Infrared Optics Pub Date : 1999-11-04 DOI: 10.1117/12.368400
L. Karachevtseva, O. A. Lytvynenko, E. A. Malovichko
{"title":"Electrochemical process of n-Si photonic structure formation","authors":"L. Karachevtseva, O. A. Lytvynenko, E. A. Malovichko","doi":"10.1117/12.368400","DOIUrl":"https://doi.org/10.1117/12.368400","url":null,"abstract":"Electrochemical process of the n-Si macroporous photonic structure formation has been investigated. The stationary distribution of the nonequilibrium hole concentration through the depth of n-Si plates after the intrinsic backside illumination was calculated. The light intensity and the electrical field regimes were determined for the macropore formation with the constant hole concentration on the tips. The stationary current regime is not equal to the electrochemical process stability. It was found that the stabilization of the hole concentration due to the light intensity change is more effective relatively the electrical field variation. The hole concentration stability and the cylindrical pore formation are possible for the high photosensitive samples only.","PeriodicalId":276773,"journal":{"name":"Material Science and Material Properties for Infrared Optics","volume":"285 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-11-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132396484","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Changes of defect structure of ZnSe crystals under passing of laser-induced shock wave 激光激波作用下ZnSe晶体缺陷结构的变化
Material Science and Material Properties for Infrared Optics Pub Date : 1999-11-04 DOI: 10.1117/12.368394
A. Baidullaeva, A. Vlasenko, B. L. Gorkovenko, P. E. Mozol'
{"title":"Changes of defect structure of ZnSe crystals under passing of laser-induced shock wave","authors":"A. Baidullaeva, A. Vlasenko, B. L. Gorkovenko, P. E. Mozol'","doi":"10.1117/12.368394","DOIUrl":"https://doi.org/10.1117/12.368394","url":null,"abstract":"In this paper laser induced shock wave (SW) influence on defect structure modification of ZnSe crystals with different accidental impurities concentration was investigated. It was analyzed spectra of photoconductivity, thermally stimulated conductivity and temperature dependencies of dark and photocurrent of ZnSe before and after SW passing. Experimental data analysis shows that changes of physical properties of ZnSe crystals under SW passing strongly depend on accidental impurities concentration. Mechanisms of defect formation under SW passing are discussed.","PeriodicalId":276773,"journal":{"name":"Material Science and Material Properties for Infrared Optics","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-11-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126699424","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Interaction of I-YI group semiconductors with metals I-YI族半导体与金属的相互作用
Material Science and Material Properties for Infrared Optics Pub Date : 1999-11-04 DOI: 10.1117/12.368404
V. Tomashik, O. V. Seritsan, V. I. Grytsiv
{"title":"Interaction of I-YI group semiconductors with metals","authors":"V. Tomashik, O. V. Seritsan, V. I. Grytsiv","doi":"10.1117/12.368404","DOIUrl":"https://doi.org/10.1117/12.368404","url":null,"abstract":"It is shown that as well as in the cases of II-YI and IY-YI group semiconductors the comparison of experimental results about phase relations of A12BYI semiconductor compounds with metals and given thermodynamic calculations testifies that the calculations of thermodynamic Gibbs potential changes in the systems A12BYI - Me alloy to determine the presence or absence of exchange interacting in each particular system with sufficient reliability. Such estimation become more reliable at the simultaneous examination of the phase diagrams of binary systems limiting each particular ternary system and taking into account the stability of all existing binary and ternary phases.","PeriodicalId":276773,"journal":{"name":"Material Science and Material Properties for Infrared Optics","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-11-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115288903","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Photovoltaic effect in graded-band-gap layers with intrinsic type of conductivity 具有本征型电导率的梯度带隙层中的光电效应
Material Science and Material Properties for Infrared Optics Pub Date : 1997-08-26 DOI: 10.1117/12.280437
Bogdan S. Sokolovsky
{"title":"Photovoltaic effect in graded-band-gap layers with intrinsic type of conductivity","authors":"Bogdan S. Sokolovsky","doi":"10.1117/12.280437","DOIUrl":"https://doi.org/10.1117/12.280437","url":null,"abstract":"Peculiarities of photovoltaic effect (PVE) in graded-band- gap (GBG) layers with intrinsic type of conductivity and linear coordinate dependence of energy gap in the conditions of layer illumination by strongly absorbed monochromatic light are investigated theoretically. It is established that sign reversal of the photoEMF takes place on the spectral dependencies of PVE in the case when light is incident on the wide-gap of the layers. The dependence of PVE reversal point on the energy gap gradient and surface recombination velocities of charge carriers is analyzed. The photoEMF of GBG layers illuminated from narrow-gap side is shown to essentially exceed the photovoltage of uniform samples with the same energy gap as at narrow-gap side of GBG layers.","PeriodicalId":276773,"journal":{"name":"Material Science and Material Properties for Infrared Optics","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-08-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121928391","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Laser pulse correcting 2D Pearson-IV ion-implanted impurity profiles near the oxidal defense mask boundary for creating matrix CdHgTe infrared detector 激光脉冲校正靠近氧化防御掩膜边界的二维Pearson-IV离子注入杂质谱线，用于创建矩阵CdHgTe红外探测器
Material Science and Material Properties for Infrared Optics Pub Date : 1997-08-26 DOI: 10.1117/12.280415
L. Monastyrskii, Yu. Sokyrka, O. Ivanel, I. Olenych, R. Kovtun
{"title":"Laser pulse correcting 2D Pearson-IV ion-implanted impurity profiles near the oxidal defense mask boundary for creating matrix CdHgTe infrared detector","authors":"L. Monastyrskii, Yu. Sokyrka, O. Ivanel, I. Olenych, R. Kovtun","doi":"10.1117/12.280415","DOIUrl":"https://doi.org/10.1117/12.280415","url":null,"abstract":"We proposed a new physical model and results of numerical calculations. According to this model, 2D concentrations of ion-implanted impurity profiles with initial distribution Pearson-IV's type under pulse laser influence. Exclusive character of this model was connected with registration action not only concentration gradient but also internal thermodiffusional stress, thermoelectric fields and parallel calculation of evolution temperature-coordinate field dependence in CdHgTe crystal with taking to account temperature dependencies of thermoconductivity and density of material. Using numerical implicit method for solving set of nonlinear nonstationary differential equations we investigated processes of side diffusion of ion-implanted in CdHgTe impurity near edge of defense mask.","PeriodicalId":276773,"journal":{"name":"Material Science and Material Properties for Infrared Optics","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-08-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124792843","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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