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Material Science and Material Properties for Infrared Optics最新文献

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Polycrystallinity to epitaxy: AFM study of CdTe hydrothermal electrodeposition 从多晶到外延:水热沉积CdTe的AFM研究
Material Science and Material Properties for Infrared Optics Pub Date : 1999-11-04 DOI: 10.1117/12.368395
Gennadiy V. Beketov
{"title":"Polycrystallinity to epitaxy: AFM study of CdTe hydrothermal electrodeposition","authors":"Gennadiy V. Beketov","doi":"10.1117/12.368395","DOIUrl":"https://doi.org/10.1117/12.368395","url":null,"abstract":"Atomic force microscopy has been used to investigate the topography of CdTe thin films grown by electrodeposition on monocrystalline substrates from aqueous solution of Cd and Te salts at elevated temperatures under overpressure. The surface morphology of the electrodeposited layers is found to be strongly effected by the temperature and the growth rates. Formation of flat terraced facets was observed for layers deposited at higher temperatures that allows to conclude the layer-by-layer growth mechanics. This gives an evidence to suggest that the epitaxial growth can be in principle realized on the base of the electrochemical deposition process.","PeriodicalId":276773,"journal":{"name":"Material Science and Material Properties for Infrared Optics","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-11-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123501709","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
II-IV-V2 and I-III-VI2 nonlinear optical crystals for mid-IR range: Schottky defects concentration II-IV-V2和I-III-VI2中红外非线性光学晶体:肖特基缺陷浓度
Material Science and Material Properties for Infrared Optics Pub Date : 1999-11-04 DOI: 10.1117/12.368333
V. Voevodin, O. Voevodina
{"title":"II-IV-V2 and I-III-VI2 nonlinear optical crystals for mid-IR range: Schottky defects concentration","authors":"V. Voevodin, O. Voevodina","doi":"10.1117/12.368333","DOIUrl":"https://doi.org/10.1117/12.368333","url":null,"abstract":"The work deals with ternary nonlinear optical crystals of I- III-VI2, and II-IV-V2-type. Theoretical thermodynamic method of quasi-chemical reactions was used. Entropy of vacancy was calculated as sum of configuration and vibration components. For the first one uncertainty in positions of new bonds formed by unpaired electrons arisen when one of consistent atoms is deleted and uncertainty in new positions of relaxing atoms were considered. Standard Boltzmann expression for configuration entropy (Delta) Sconf equals (Sigma) klnw and geometry considerations were used. It was assumed that the vibration component is caused by change in vibration frequency of atoms surrounding formed vacancy. Change in length of bonds and in bonding force took into account. Approximate expression for vibration entropy change (Delta) Svibr equals 3Nkln, geometry considerations and results of bonds lengths calculations were used.","PeriodicalId":276773,"journal":{"name":"Material Science and Material Properties for Infrared Optics","volume":"85 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-11-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122939155","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Influence of semiconductor structure inhomogeneity on electrophysical measurement results 半导体结构不均匀性对电物理测量结果的影响
Material Science and Material Properties for Infrared Optics Pub Date : 1999-11-04 DOI: 10.1117/12.368378
V. G. Savitsky, A. Vlasov, Alexey V. Nemolovsky, Bogdan S. Sokolovsky
{"title":"Influence of semiconductor structure inhomogeneity on electrophysical measurement results","authors":"V. G. Savitsky, A. Vlasov, Alexey V. Nemolovsky, Bogdan S. Sokolovsky","doi":"10.1117/12.368378","DOIUrl":"https://doi.org/10.1117/12.368378","url":null,"abstract":"By means of computer modeling and numerical analysis it has been shown that redistribution of charge carriers in non- homogeneous semiconductor structures has significant contribution to the Hall effect and conductivity of these samples and produce incorrect data when electrophysical measurements are used for determining the semiconductor layer parameters. For semiconductor structures on the basis of HgCdTe solid alloys this effect may manifest in the case of narrow gap layer with p-conductivity on the n-type wide gap base. Such structures are of interest for manufacturing IR photodetectors.SO for their characterization the differential Hall and conductivity method should be used with great caution.","PeriodicalId":276773,"journal":{"name":"Material Science and Material Properties for Infrared Optics","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-11-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123999599","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Phase transitions and transport properties in SnTe crystals and thin films SnTe晶体和薄膜的相变和输运特性
Material Science and Material Properties for Infrared Optics Pub Date : 1999-11-04 DOI: 10.1117/12.368382
O. Nashchekina, E. Rogacheva, A. I. Fedorenko
{"title":"Phase transitions and transport properties in SnTe crystals and thin films","authors":"O. Nashchekina, E. Rogacheva, A. I. Fedorenko","doi":"10.1117/12.368382","DOIUrl":"https://doi.org/10.1117/12.368382","url":null,"abstract":"The temperature dependences of electrical conductivity (sigma) , Hall coefficient RH and charge carrier mobility (mu) H for tin telluride with different degrees of deviation from stoichiometry have been obtained in the range of 4.2-300K. It has been shown that in bulk and thin film samples with charge carrier concentrations up to pH approximately equals 8 X 10 cm-3 there is observed earlier known ferroelectric phase transition accompanied by anomalous drop in (sigma) and (mu) H in the vicinity of T approximately equals 100 K. On the other hand, as pH grows, there appear temperature anomalies of transport coefficients in the range of 135-150 and 200-215 K. THese anomalies are attributed to the phase transitions connected with cation vacancies redistribution over the crystal lattice with changing temperature. It has been shown that realization of these processes is controlled by charge carrier concentration and kinetic factors.","PeriodicalId":276773,"journal":{"name":"Material Science and Material Properties for Infrared Optics","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-11-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126532199","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Silicon p-i-n photodiode with low values of dark current 具有低暗电流的硅p-i-n光电二极管
Material Science and Material Properties for Infrared Optics Pub Date : 1999-11-04 DOI: 10.1117/12.368340
A. A. Ascheulov, Vasily M. Godovanyuk, Y. Dobrovolsky, I. Rarenko, V. Ryukhtin, S. Ostapov
{"title":"Silicon p-i-n photodiode with low values of dark current","authors":"A. A. Ascheulov, Vasily M. Godovanyuk, Y. Dobrovolsky, I. Rarenko, V. Ryukhtin, S. Ostapov","doi":"10.1117/12.368340","DOIUrl":"https://doi.org/10.1117/12.368340","url":null,"abstract":"Dark current dependence of silicon p-i-n photodiode on the p+-type layer location depth at the photodiode crystal back. It was revealed that the smallest specific values of dark current is obtained at 6-9 micrometers p+- type layer depth. Three mechanisms that explain the obtained results were considered: dislocational, metal impurities and strain influence on the metal - semiconductor edge.","PeriodicalId":276773,"journal":{"name":"Material Science and Material Properties for Infrared Optics","volume":"168 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-11-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122638893","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Transport properties of p-Hg1-xCdxTe (x = 0.22) p-Hg1-xCdxTe的输运性质(x = 0.22)
Material Science and Material Properties for Infrared Optics Pub Date : 1999-11-04 DOI: 10.1117/12.368373
P. Moravec, R. Grill, J. Franc, P. Hoeschl, E. Belas
{"title":"Transport properties of p-Hg1-xCdxTe (x = 0.22)","authors":"P. Moravec, R. Grill, J. Franc, P. Hoeschl, E. Belas","doi":"10.1117/12.368373","DOIUrl":"https://doi.org/10.1117/12.368373","url":null,"abstract":"Measurements of the Hall coefficient and conductivity of not intentionally doped p-Hg1-xCdxTe samples at temperatures 4.2-300K are reported. A theoretical approximation of experimental data based on a solution of the electronic Boltzmann transport equation and subsequent fitting procedure is done giving a very good agreement between the experiment and calculation. The measurements are analyzed in the full temperature interval simultaneously using the same relevant model parameters in the doping, intrinsic and intermediate region as well. The three- acceptor-level model for one divalent acceptor and one monovalent residual acceptor is discussed. The precision of model parameters determined by this way is analyzed. A novel method to check the sample homogeneity is suggested.","PeriodicalId":276773,"journal":{"name":"Material Science and Material Properties for Infrared Optics","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-11-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132818718","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Superluminal transfer of information in electrodynamics 电动力学中的超光速信息传递
Material Science and Material Properties for Infrared Optics Pub Date : 1999-11-04 DOI: 10.1117/12.368375
V. P. Oleinik
{"title":"Superluminal transfer of information in electrodynamics","authors":"V. P. Oleinik","doi":"10.1117/12.368375","DOIUrl":"https://doi.org/10.1117/12.368375","url":null,"abstract":"It is shown that in electrodynamics there exist two mechanism of transferring a signal: (1) with the help of electromagnetic waves and (2) via the standing waves of the own field of a charged particle. In the former case, the transfer of a signal is carried out by quanta a light, and in the latter case, it is of a purely wave character and can occur instantaneously. The existence of instantaneous signals necessarily follows from the laws of electrodynamics as well as from the most general considerations. The results of the paper do not contradict the special theory of relativity because the ban of superluminal transfer of a signal, following at the first sight from kinematic reasons, is lifted in a natural way by the detailed consideration of dynamics of the process that gives rise to the occurrence of faster-than-light excitations. The basic possibility of superluminal information transfer follows from the fact that the charged self-acting particles become spatially extended objects and, therefore, the events, separated by space-like intervals, cease to be physically independent. The quantum theory of self-organization of electrodynamic systems indicative of the possibility of superluminal transfer of a signal with the help of the own field of a particle can serve as the basis for creation of essentially new means and systems of communication.","PeriodicalId":276773,"journal":{"name":"Material Science and Material Properties for Infrared Optics","volume":"203 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-11-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132497166","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
New approach to the problem of determination of optical band gap of crystals with exponential absorption edge 研究了具有指数吸收边的晶体光学带隙的确定问题
Material Science and Material Properties for Infrared Optics Pub Date : 1999-11-04 DOI: 10.1117/12.368361
V. Bogoboyashchiy
{"title":"New approach to the problem of determination of optical band gap of crystals with exponential absorption edge","authors":"V. Bogoboyashchiy","doi":"10.1117/12.368361","DOIUrl":"https://doi.org/10.1117/12.368361","url":null,"abstract":"The bandgap Eg is one of the main parameters of a semiconducting material, therefore development of precision methods of determination of Eg represents the important applied problem. Now this problem acquires the special significant due to extension of applications of semiconductive solid solutions, such as Hg2-xCdxTe and others, because Eg depends on the chemical compositions of the solution and varies from a sample to another one.","PeriodicalId":276773,"journal":{"name":"Material Science and Material Properties for Infrared Optics","volume":"340 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-11-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131909603","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Effect of laser irradiation on photoconductivity of GaAs crystals 激光辐照对砷化镓晶体光电性的影响
Material Science and Material Properties for Infrared Optics Pub Date : 1999-11-04 DOI: 10.1117/12.368399
V. Gnatyuk, O. S. Gorodnychenko, P. E. Mozol', A. Vlasenko
{"title":"Effect of laser irradiation on photoconductivity of GaAs crystals","authors":"V. Gnatyuk, O. S. Gorodnychenko, P. E. Mozol', A. Vlasenko","doi":"10.1117/12.368399","DOIUrl":"https://doi.org/10.1117/12.368399","url":null,"abstract":"Purposeful changes of the photoelectric properties of GaAs crystals by irradiation with nanosecond ruby laser pulses were studied in order to obtain structures with desired physical properties. It was established that irradiation of polished GaAs crystals with laser pulses of energy density above the melting threshold increased the photoconductivity signal and decreased the recombination rate of the nonequilibrium charge carriers because of epitaxial recrystallization of the damaged surface layer. The photoconductivity of the samples with anisotropically etched surface decreased after such laser irradiation. The resistivity of irradiated GaAs crystals decreased because of formation of shallow donor centers. The reasons for these laser-stimulated phenomena were determined and the mechanism of laser irradiation was discussed. The method to improve the photoelectric parameters of GaAs crystal by means of pulsed laser irradiation is offered.","PeriodicalId":276773,"journal":{"name":"Material Science and Material Properties for Infrared Optics","volume":"160 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-11-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134338293","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Conditions of arising and nature of the dislocation magnetism of deformed silicon crystals 变形硅晶体位错磁性的产生条件和性质
Material Science and Material Properties for Infrared Optics Pub Date : 1999-11-04 DOI: 10.1117/12.368365
A. V. Brodovoi, V. Kolesnichenko, V. Skorokhod, S. Solonin, S. Koleśnik, V. A. Brodovoi, G. A. Zykov, O. Zinets
{"title":"Conditions of arising and nature of the dislocation magnetism of deformed silicon crystals","authors":"A. V. Brodovoi, V. Kolesnichenko, V. Skorokhod, S. Solonin, S. Koleśnik, V. A. Brodovoi, G. A. Zykov, O. Zinets","doi":"10.1117/12.368365","DOIUrl":"https://doi.org/10.1117/12.368365","url":null,"abstract":"The magnetic susceptibility of initial n-Si single crystal with the current carrier concentration 1.2-1014 cm-3 and the same crystals after uniaxial deformation up to 11 percent was measured by the Faraday method at room temperature in the range of 0.1-4 kOe. It was found that initial undeformed silicon samples were diamagnetic ones with susceptibility of -2.29- 10-7 cm3g-1 which is independent on the magnetic field strength. The presence of dislocations in silicon crystals essentially influences on the magnetic susceptibility, the dependence of the magnetic susceptibility on the magnetic field being strongly nonlinear. The non-resonance microwave response has been investigated using the ESR spectroscopy technique. The hysteresis of the microwave absorption was observed that is typical for a magnetic ordering. Possible explanation of unusual magnetic properties of silicon and the connection of these property with appearance of microcracks in strongly deformed silicon has been proposed.","PeriodicalId":276773,"journal":{"name":"Material Science and Material Properties for Infrared Optics","volume":"53 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-11-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132872869","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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