{"title":"研究了具有指数吸收边的晶体光学带隙的确定问题","authors":"V. Bogoboyashchiy","doi":"10.1117/12.368361","DOIUrl":null,"url":null,"abstract":"The bandgap Eg is one of the main parameters of a semiconducting material, therefore development of precision methods of determination of Eg represents the important applied problem. Now this problem acquires the special significant due to extension of applications of semiconductive solid solutions, such as Hg2-xCdxTe and others, because Eg depends on the chemical compositions of the solution and varies from a sample to another one.","PeriodicalId":276773,"journal":{"name":"Material Science and Material Properties for Infrared Optics","volume":"340 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1999-11-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"New approach to the problem of determination of optical band gap of crystals with exponential absorption edge\",\"authors\":\"V. Bogoboyashchiy\",\"doi\":\"10.1117/12.368361\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The bandgap Eg is one of the main parameters of a semiconducting material, therefore development of precision methods of determination of Eg represents the important applied problem. Now this problem acquires the special significant due to extension of applications of semiconductive solid solutions, such as Hg2-xCdxTe and others, because Eg depends on the chemical compositions of the solution and varies from a sample to another one.\",\"PeriodicalId\":276773,\"journal\":{\"name\":\"Material Science and Material Properties for Infrared Optics\",\"volume\":\"340 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1999-11-04\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Material Science and Material Properties for Infrared Optics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1117/12.368361\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Material Science and Material Properties for Infrared Optics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1117/12.368361","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
New approach to the problem of determination of optical band gap of crystals with exponential absorption edge
The bandgap Eg is one of the main parameters of a semiconducting material, therefore development of precision methods of determination of Eg represents the important applied problem. Now this problem acquires the special significant due to extension of applications of semiconductive solid solutions, such as Hg2-xCdxTe and others, because Eg depends on the chemical compositions of the solution and varies from a sample to another one.
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