具有低暗电流的硅p-i-n光电二极管

Material Science and Material Properties for Infrared Optics Pub Date : 1999-11-04 DOI:10.1117/12.368340

A. A. Ascheulov, Vasily M. Godovanyuk, Y. Dobrovolsky, I. Rarenko, V. Ryukhtin, S. Ostapov

{"title":"具有低暗电流的硅p-i-n光电二极管","authors":"A. A. Ascheulov, Vasily M. Godovanyuk, Y. Dobrovolsky, I. Rarenko, V. Ryukhtin, S. Ostapov","doi":"10.1117/12.368340","DOIUrl":null,"url":null,"abstract":"Dark current dependence of silicon p-i-n photodiode on the p+-type layer location depth at the photodiode crystal back. It was revealed that the smallest specific values of dark current is obtained at 6-9 micrometers p+- type layer depth. Three mechanisms that explain the obtained results were considered: dislocational, metal impurities and strain influence on the metal - semiconductor edge.","PeriodicalId":276773,"journal":{"name":"Material Science and Material Properties for Infrared Optics","volume":"168 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1999-11-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Silicon p-i-n photodiode with low values of dark current\",\"authors\":\"A. A. Ascheulov, Vasily M. Godovanyuk, Y. Dobrovolsky, I. Rarenko, V. Ryukhtin, S. Ostapov\",\"doi\":\"10.1117/12.368340\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Dark current dependence of silicon p-i-n photodiode on the p+-type layer location depth at the photodiode crystal back. It was revealed that the smallest specific values of dark current is obtained at 6-9 micrometers p+- type layer depth. Three mechanisms that explain the obtained results were considered: dislocational, metal impurities and strain influence on the metal - semiconductor edge.\",\"PeriodicalId\":276773,\"journal\":{\"name\":\"Material Science and Material Properties for Infrared Optics\",\"volume\":\"168 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1999-11-04\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Material Science and Material Properties for Infrared Optics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1117/12.368340\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Material Science and Material Properties for Infrared Optics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1117/12.368340","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

摘要

硅p-i-n光电二极管的暗电流与光电二极管晶体背面p+型层位深度的关系。结果表明，在p+型层深6 ~ 9微米处，暗电流比值最小。考虑了三种解释所得结果的机制:位错、金属杂质和金属半导体边缘的应变影响。

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Silicon p-i-n photodiode with low values of dark current

Dark current dependence of silicon p-i-n photodiode on the p+-type layer location depth at the photodiode crystal back. It was revealed that the smallest specific values of dark current is obtained at 6-9 micrometers p+- type layer depth. Three mechanisms that explain the obtained results were considered: dislocational, metal impurities and strain influence on the metal - semiconductor edge.

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Material Science and Material Properties for Infrared Optics

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