Influence of semiconductor structure inhomogeneity on electrophysical measurement results

By means of computer modeling and numerical analysis it has been shown that redistribution of charge carriers in non- homogeneous semiconductor structures has significant contribution to the Hall effect and conductivity of these samples and produce incorrect data when electrophysical measurements are used for determining the semiconductor layer parameters. For semiconductor structures on the basis of HgCdTe solid alloys this effect may manifest in the case of narrow gap layer with p-conductivity on the n-type wide gap base. Such structures are of interest for manufacturing IR photodetectors.SO for their characterization the differential Hall and conductivity method should be used with great caution.