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Material Science and Material Properties for Infrared Optics最新文献

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Radiation-acoustic treatment of gallium phosphide light diodes 磷化镓发光二极管的辐射声处理
Material Science and Material Properties for Infrared Optics Pub Date : 1999-11-04 DOI: 10.1117/12.368419
V. Tartachnik, O. M. Gontaruk, R. Vernydub, Anatoly M. Kryvutenko, Y. Olikh, V. Opilat, I. Petrenko, M. Pinkovska
{"title":"Radiation-acoustic treatment of gallium phosphide light diodes","authors":"V. Tartachnik, O. M. Gontaruk, R. Vernydub, Anatoly M. Kryvutenko, Y. Olikh, V. Opilat, I. Petrenko, M. Pinkovska","doi":"10.1117/12.368419","DOIUrl":"https://doi.org/10.1117/12.368419","url":null,"abstract":"The ultrasound influence on the defects of technological and radiation origin of GaP light diodes has been investigated. GaP light diodes were treated by ultrasound wave in different operating modes. Electroluminescence spectra were measured at room and low temperatures, integrated luminosity of devices was checked by solar cell. In order to find out the radiation field influence on non-equilibrium defects of acoustic origin samples were irradiated at room temperature by gamma rays of Co60. It has been discovered that in GaP light diodes treated by ultrasound unstable at room temperature dislocation networks occur at the volume of crystal. Ultrasound dose increase causes the creation of complex defects with high relaxation time and appearing of a part of more mobile defect,s which relax quicker. The nature of effects discovered has been discussed. The method of the emissive capacity restoring of samples degraded after irradiation have been proposed.","PeriodicalId":276773,"journal":{"name":"Material Science and Material Properties for Infrared Optics","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-11-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122197495","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Imaging system performance analysis and optimization using objective image quality criteria 利用客观图像质量标准对成像系统性能进行分析和优化
Material Science and Material Properties for Infrared Optics Pub Date : 1999-11-04 DOI: 10.1117/12.368364
V. Borovytsky, V. V. Fesenko, Anatoly V. Molodyk, Pavel A. Zavorotny
{"title":"Imaging system performance analysis and optimization using objective image quality criteria","authors":"V. Borovytsky, V. V. Fesenko, Anatoly V. Molodyk, Pavel A. Zavorotny","doi":"10.1117/12.368364","DOIUrl":"https://doi.org/10.1117/12.368364","url":null,"abstract":"The paper presents an approach for performance evaluation and parametric optimization for IR imagin system design. This approach is based on calculations and minimization of image distortion. It applies the criterion like minimization of normalized least-square image error. The proposed mathematical apparatus makes possible evaluation of the performance and calculation of optimal parameters that reduces image distortion caused by spatial filtering and noise. The paper illustrates the application of the posed techniques for scanning system performance analysis and design.","PeriodicalId":276773,"journal":{"name":"Material Science and Material Properties for Infrared Optics","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-11-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130043379","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Dependence of compositional profile and structural perfection of CdxHg1-xTe graded-gap films on its growing conditions CdxHg1-xTe梯度隙薄膜的成分分布和结构完善与生长条件的关系
Material Science and Material Properties for Infrared Optics Pub Date : 1999-11-04 DOI: 10.1117/12.368412
V. Antonov, O. N. Janikay, S. L. Korolyuk, A. Rarenko, Y. Stetsko, E. B. Talyanskiy, Z. Zakharuk, O. O. Bodnaruk
{"title":"Dependence of compositional profile and structural perfection of CdxHg1-xTe graded-gap films on its growing conditions","authors":"V. Antonov, O. N. Janikay, S. L. Korolyuk, A. Rarenko, Y. Stetsko, E. B. Talyanskiy, Z. Zakharuk, O. O. Bodnaruk","doi":"10.1117/12.368412","DOIUrl":"https://doi.org/10.1117/12.368412","url":null,"abstract":"Physical-chemical processes of CdxHg1-xTe graded structures (GSS) growing by evaporation condensation- diffusion method on CdTe substrates from HgTe source were analyzed. GSS were melted to the necessary depth and after crystallization were annealed in mercury vapor in order to obtain CdxHg1-xTe structure-perfect epitaxial layers of given composition.","PeriodicalId":276773,"journal":{"name":"Material Science and Material Properties for Infrared Optics","volume":"51 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-11-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129716077","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Absorption of far-infrared radiation by metal-dielectric composites 金属-介电复合材料对远红外辐射的吸收
Material Science and Material Properties for Infrared Optics Pub Date : 1999-11-04 DOI: 10.1117/12.368347
L. Grechko, A. Pinchuk, A. Lesjø
{"title":"Absorption of far-infrared radiation by metal-dielectric composites","authors":"L. Grechko, A. Pinchuk, A. Lesjø","doi":"10.1117/12.368347","DOIUrl":"https://doi.org/10.1117/12.368347","url":null,"abstract":"The theoretical calculations of the far-IR absorption by composites with small metallic inclusions are performed. The main electrostatic assumption of electrically small inclusions in the case of high conductive particles in the far-IR range is not valid. The modified expressions for the dielectric and magnetic permeability of the metallic inclusions are obtained using Mie theory. The calculated absorption spectra of Pd-KCl composite in the far-IR region are in good agreement with experiment.","PeriodicalId":276773,"journal":{"name":"Material Science and Material Properties for Infrared Optics","volume":"56 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-11-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132018225","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Stimulated emission of far-infrared radiation from uniaxially strained gapless Hg1-xCdxTe 单轴应变无间隙Hg1-xCdxTe远红外辐射的受激发射
Material Science and Material Properties for Infrared Optics Pub Date : 1999-11-04 DOI: 10.1117/12.368374
S. Gasan-zade, G. Shepelskiĭ, S. V. Staryj, M. Strikha, F. Vasko
{"title":"Stimulated emission of far-infrared radiation from uniaxially strained gapless Hg1-xCdxTe","authors":"S. Gasan-zade, G. Shepelskiĭ, S. V. Staryj, M. Strikha, F. Vasko","doi":"10.1117/12.368374","DOIUrl":"https://doi.org/10.1117/12.368374","url":null,"abstract":"The stimulated emission of far IR radiation from uniaxially strained gapless Hg1-xCdxTe was observed experimentally. The mechanism of this effect is proposed with allowance of both the strain-induced transformation of energy spectrum and the transformation of impurity acceptor level in the gapless semiconductor.","PeriodicalId":276773,"journal":{"name":"Material Science and Material Properties for Infrared Optics","volume":"53 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-11-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132450526","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Shottky diode based on the solid solutions CdxMnyHg1-x-yTe and CdxZnyHg1-x-yTe 基于固体溶液CdxMnyHg1-x-yTe和CdxZnyHg1-x-yTe的肖特基二极管
Material Science and Material Properties for Infrared Optics Pub Date : 1999-11-04 DOI: 10.1117/12.368339
O. O. Bodnaruk, Andrey V. Markov, S. Ostapov, I. Rarenko, Vasily M. Godovanyuk
{"title":"Shottky diode based on the solid solutions CdxMnyHg1-x-yTe and CdxZnyHg1-x-yTe","authors":"O. O. Bodnaruk, Andrey V. Markov, S. Ostapov, I. Rarenko, Vasily M. Godovanyuk","doi":"10.1117/12.368339","DOIUrl":"https://doi.org/10.1117/12.368339","url":null,"abstract":"The theoretical and experimental investigations of the main zone parameters of the quaternary solid solutions CdMnGeTe and CdZnHgTe are represented in the given paper. As a result of these investigations the empirical formulae for the energy gap width and intrinsic carrier concentration in the wide range of the temperature and compositions are proposed. The results of the theoretical calculations agree well with the experimental data. On the base of these empirical expressions the calculation of the Schottky diode main parameters have been carried out.","PeriodicalId":276773,"journal":{"name":"Material Science and Material Properties for Infrared Optics","volume":"67 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-11-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133513324","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Effect of gamma ray and high-energy oxygen ion radiation on electrical and optical properties of MCT epitaxial layers 伽马射线和高能氧离子辐射对MCT外延层电学和光学性能的影响
Material Science and Material Properties for Infrared Optics Pub Date : 1999-11-04 DOI: 10.1117/12.368353
S. Sitharaman, D. Kanjilal, S. Arora, S. Ganguly, A. Nagpal, Madhukar Gautam, R. Raman, S. Kumar, V. Prakash, S. Gupta
{"title":"Effect of gamma ray and high-energy oxygen ion radiation on electrical and optical properties of MCT epitaxial layers","authors":"S. Sitharaman, D. Kanjilal, S. Arora, S. Ganguly, A. Nagpal, Madhukar Gautam, R. Raman, S. Kumar, V. Prakash, S. Gupta","doi":"10.1117/12.368353","DOIUrl":"https://doi.org/10.1117/12.368353","url":null,"abstract":"Hg1-xCdxTe epitaxial layers grown from Te-rich solution have been exposed to Gamma ray radiation up to 650 Grey using Co60 and high energy oxygen radiation at 100Mev. The electrical resistivity, carrier density and Hall mobility values at 77K and IR transmission at 300K have been measured in n,p and compensated epilayers both before and after irradiation. These properties are very much affected by these radiations. In the uncompensated p-type epitaxial layers both types of radiation produced an increase in extrinsic carrier density and a corresponding decrease in Hall mobility. It is observed that both types of radiation have significant effect on the compensated layers and the degree of compensation is greatly reduced by the oxygen irradiation. The 100 Mev oxygen irradiation produced an apparent shift in the bandgap towards shorter wavelength and the absorption below the energy gap is reduced as shown by FTIR measurements, whereas Gamma ray radiation up to the dose 650 Grey did not have any effect on optical properties. These results show the ability of oxygen radiation to passivate the activity of residual impurities or defects.","PeriodicalId":276773,"journal":{"name":"Material Science and Material Properties for Infrared Optics","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-11-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114767516","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Dissolution of indium arsenide in HNO3-HBr-H2O and Br2-HBr solutions 砷化铟在HNO3-HBr-H2O和Br2-HBr溶液中的溶解
Material Science and Material Properties for Infrared Optics Pub Date : 1999-11-04 DOI: 10.1117/12.368403
Z. F. Tomashik, S. Danylenko, V. Tomashik
{"title":"Dissolution of indium arsenide in HNO3-HBr-H2O and Br2-HBr solutions","authors":"Z. F. Tomashik, S. Danylenko, V. Tomashik","doi":"10.1117/12.368403","DOIUrl":"https://doi.org/10.1117/12.368403","url":null,"abstract":"The InAs dissolution in HNO3-HBr-H2O and Br2-HBr solutions is investigated. The surface of equal etching rates is constructed and the process limiting stages of dissolution depending on a size of a ratio in such solutions are determined. The kinetics of InAs dissolution in Br2- HBr solutions is investigated. The solution region which can be used for chemicodynamic polishing of InAs is determined.","PeriodicalId":276773,"journal":{"name":"Material Science and Material Properties for Infrared Optics","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-11-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124747237","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Strain analysis of epitaxial multivalley semiconductor films using galvanomagnetic-effect rotational dependence 外延多谷半导体薄膜的流磁效应旋转依赖应变分析
Material Science and Material Properties for Infrared Optics Pub Date : 1999-11-04 DOI: 10.1117/12.368359
N. Berchenko, V. Yakovyna, A. Nikiforov, H. Zogg
{"title":"Strain analysis of epitaxial multivalley semiconductor films using galvanomagnetic-effect rotational dependence","authors":"N. Berchenko, V. Yakovyna, A. Nikiforov, H. Zogg","doi":"10.1117/12.368359","DOIUrl":"https://doi.org/10.1117/12.368359","url":null,"abstract":"On the example of the PbTe and Pb077Sn023Te on BaF2 the possibility of using the weak magnetic field resistance technique for the evaluation of mismatch- thermally induced strains in semiconductors with multivalley band structure is discussed. Strain value and strain relaxation dynamics after many temperature cycles between room temperature and 77K have been investigated for n- and p-PbTe and PbSnTe epitaxial layers on BaF2 substrates.","PeriodicalId":276773,"journal":{"name":"Material Science and Material Properties for Infrared Optics","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-11-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123410534","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Depth inhomogeneity of ZnTe, CdZnTe, ZnSe epilayers grown on (001)GaAs of MBE MBE (001)GaAs上生长ZnTe, CdZnTe, ZnSe薄膜的深度非均匀性
Material Science and Material Properties for Infrared Optics Pub Date : 1999-11-04 DOI: 10.1117/12.368350
E. Venger, Y. G. Sadof’ev, G. N. Semenova, N. Korsunskaya, V. P. Klad'ko, B. Embergenov, B. R. Dzhumaev, L. Borkovskaya, M. P. Semtsiv, M. Sharibaev
{"title":"Depth inhomogeneity of ZnTe, CdZnTe, ZnSe epilayers grown on (001)GaAs of MBE","authors":"E. Venger, Y. G. Sadof’ev, G. N. Semenova, N. Korsunskaya, V. P. Klad'ko, B. Embergenov, B. R. Dzhumaev, L. Borkovskaya, M. P. Semtsiv, M. Sharibaev","doi":"10.1117/12.368350","DOIUrl":"https://doi.org/10.1117/12.368350","url":null,"abstract":"In this work we report the depth inhomogeneity study of MBE grown ZnSe, CdZnTe and ZnTe/(001) GaAs epilayers of different thickness by x-ray and depth resolved photoluminescence methods. Step etching and different wavelength excitation were used for this purpose. It is shown that all these epilayers consist of three regions with different extended defect and impurity concentrations: (i) near the interface one with high density of misfit dislocations and impurities concentration; (ii) the region with low extended defect and impurity concentration and (iii) near the top surface region with higher extended and point defect concentration. The deterioration of near top surface region increases with epilayer thickness. Influence of GaAs substrate preparation regimes on ZnSe layer growth and optical properties as well as the study of interdiffusion of Ga and Zn across the wafer-epilayer interface have been investigated. The possibility to use thin intermediate ZnTe layer with solid phase crystallization for blocking of the interdiffusion in ZnTe layers and improvement of epilayer photoluminescence characteristics have been explored.","PeriodicalId":276773,"journal":{"name":"Material Science and Material Properties for Infrared Optics","volume":"87 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-11-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114096836","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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