Strain analysis of epitaxial multivalley semiconductor films using galvanomagnetic-effect rotational dependence

Abstract

On the example of the PbTe and Pb077Sn023Te on BaF2 the possibility of using the weak magnetic field resistance technique for the evaluation of mismatch- thermally induced strains in semiconductors with multivalley band structure is discussed. Strain value and strain relaxation dynamics after many temperature cycles between room temperature and 77K have been investigated for n- and p-PbTe and PbSnTe epitaxial layers on BaF2 substrates.