Stimulated emission of far-infrared radiation from uniaxially strained gapless Hg1-xCdxTe

Abstract

The stimulated emission of far IR radiation from uniaxially strained gapless Hg1-xCdxTe was observed experimentally. The mechanism of this effect is proposed with allowance of both the strain-induced transformation of energy spectrum and the transformation of impurity acceptor level in the gapless semiconductor.