单轴应变无间隙Hg1-xCdxTe远红外辐射的受激发射

Material Science and Material Properties for Infrared Optics Pub Date : 1999-11-04 DOI:10.1117/12.368374

S. Gasan-zade, G. Shepelskiĭ, S. V. Staryj, M. Strikha, F. Vasko

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摘要

实验观察了单轴应变无间隙Hg1-xCdxTe远红外辐射的受激发射。在考虑无间隙半导体中应变诱导的能谱转换和杂质受体能级转换的情况下，提出了这种效应的机理。

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Stimulated emission of far-infrared radiation from uniaxially strained gapless Hg1-xCdxTe

The stimulated emission of far IR radiation from uniaxially strained gapless Hg1-xCdxTe was observed experimentally. The mechanism of this effect is proposed with allowance of both the strain-induced transformation of energy spectrum and the transformation of impurity acceptor level in the gapless semiconductor.

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Material Science and Material Properties for Infrared Optics

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