CdxHg1-xTe梯度隙薄膜的成分分布和结构完善与生长条件的关系

Material Science and Material Properties for Infrared Optics Pub Date : 1999-11-04 DOI:10.1117/12.368412

V. Antonov, O. N. Janikay, S. L. Korolyuk, A. Rarenko, Y. Stetsko, E. B. Talyanskiy, Z. Zakharuk, O. O. Bodnaruk

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摘要

分析了蒸发冷凝扩散法制备CdxHg1-xTe梯度结构(GSS)在HgTe源CdTe衬底上生长的物理化学过程。将GSS熔化至一定的深度，结晶后在汞蒸气中退火，得到给定成分的结构完美的CdxHg1-xTe外延层。

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Dependence of compositional profile and structural perfection of CdxHg1-xTe graded-gap films on its growing conditions

Physical-chemical processes of CdxHg1-xTe graded structures (GSS) growing by evaporation condensation- diffusion method on CdTe substrates from HgTe source were analyzed. GSS were melted to the necessary depth and after crystallization were annealed in mercury vapor in order to obtain CdxHg1-xTe structure-perfect epitaxial layers of given composition.

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Material Science and Material Properties for Infrared Optics

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