{"title":"分子束外延生长CdxHg1-xTe外延膜的光电特性","authors":"A. Voitsekhovskii, Yu. A. Denisov, A. Kokhanenko","doi":"10.1117/12.368354","DOIUrl":null,"url":null,"abstract":"The results of measurements of lifetime of charge carriers in epitaxial structures based on narrow gap Hg1-xCdxTe, grown by a method molecular-beam epitaxy are resulted at pulsing excitation by radiation on various lengths of waves.","PeriodicalId":276773,"journal":{"name":"Material Science and Material Properties for Infrared Optics","volume":"6 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1999-11-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Photoelectric characteristics of the epitaxial film CdxHg1-xTe grown by molecular beam epitaxy\",\"authors\":\"A. Voitsekhovskii, Yu. A. Denisov, A. Kokhanenko\",\"doi\":\"10.1117/12.368354\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The results of measurements of lifetime of charge carriers in epitaxial structures based on narrow gap Hg1-xCdxTe, grown by a method molecular-beam epitaxy are resulted at pulsing excitation by radiation on various lengths of waves.\",\"PeriodicalId\":276773,\"journal\":{\"name\":\"Material Science and Material Properties for Infrared Optics\",\"volume\":\"6 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1999-11-04\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Material Science and Material Properties for Infrared Optics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1117/12.368354\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Material Science and Material Properties for Infrared Optics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1117/12.368354","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Photoelectric characteristics of the epitaxial film CdxHg1-xTe grown by molecular beam epitaxy
The results of measurements of lifetime of charge carriers in epitaxial structures based on narrow gap Hg1-xCdxTe, grown by a method molecular-beam epitaxy are resulted at pulsing excitation by radiation on various lengths of waves.
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