Photoelectric characteristics of the epitaxial film CdxHg1-xTe grown by molecular beam epitaxy

Material Science and Material Properties for Infrared Optics Pub Date : 1999-11-04 DOI:10.1117/12.368354

A. Voitsekhovskii, Yu. A. Denisov, A. Kokhanenko

引用次数: 0

Abstract

The results of measurements of lifetime of charge carriers in epitaxial structures based on narrow gap Hg1-xCdxTe, grown by a method molecular-beam epitaxy are resulted at pulsing excitation by radiation on various lengths of waves.

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分子束外延生长CdxHg1-xTe外延膜的光电特性

用分子束外延法生长的窄间隙Hg1-xCdxTe外延结构中载流子的寿命在不同波长的脉冲辐射激发下得到了测量结果。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Material Science and Material Properties for Infrared Optics

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