Exchange effects in electron-hole plasma in quantum well heterostructures under an electric field

I. Fyodorov, V. Sokolov
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Abstract

Numerical calculations are presented for the electron-hole plasma density dependence of the ground-state subband energies and carrier's wave functions in GaAs/AlxGa1-xAs quantum-well heterostructure subjected an electric field. We show that both the Hartree and exchange interactions cause the electron and hole self-energies to highly depend on the plasma density. In contrast, only a weak dependence of the spatial extent of the wave functions, due to exchange interactions, on the plasma density has been found.Our calculations also reveal a strong competition between the exchange and Hartree interactions as a function of plasma density, that in general, depends on the electric field and quantum-well width. The results of numerical calculations of the band-gap renormalization due to many- body effects are used to infer the bistable behavior of the quantum-well heterostructures in an electric field under near band-gap photoexcitation.
电场作用下量子阱异质结构中电子-空穴等离子体的交换效应
本文给出了电场作用下GaAs/AlxGa1-xAs量子阱异质结构中电子-空穴等离子体密度与基态子带能量和载流子波函数的关系的数值计算。我们发现哈特里相互作用和交换相互作用都导致电子和空穴自能高度依赖于等离子体密度。相比之下,由于交换相互作用,只发现波函数的空间范围对等离子体密度的依赖性很弱。我们的计算还揭示了交换和哈特里相互作用之间的强烈竞争,作为等离子体密度的函数,通常取决于电场和量子阱宽度。利用多体效应引起的带隙重整化的数值计算结果,推导了近带隙光激发下量子阱异质结构在电场中的双稳态行为。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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