p-to-n ion-beam milling conversion in specially doped CdxHg1-xTe

Ion beam milling effect on electrical properties of usual vacancy doped and especially In compensated p-CdxHg1-xTe has been investigated. In all cases after ion beam milling by low energy neutralized. Ar ions n-p structure with thickness of n-layers that depended on initial hole concentration and irradiation dose has been created. It was shown that in the usual vacancy doped CdxHg1-xTe the electron concentration in n-layers well agrees with concentration of residual donors. For the especially doped samples the electron concentration was determined by the In donor impurities' concentration. The possibility of the n-p+ CdxHg1-xTe photodiode fabrication with optimum required carriers' concentration both in n- and p-regions has been demonstrated by ion beam milling of the especially doped samples.