{"title":"磁场对红外mos光电探测器电参数变化的影响","authors":"A. Voitsekhovskii, V. Davydov, S. Nesmelov","doi":"10.1117/12.280442","DOIUrl":null,"url":null,"abstract":"Influence of a weak magnetic field on photo-electric, electrophysical characteristics of MIS - structures is experimentally investigated.Long-term changes of a spectrum of surface states of Si-SiO2-structures, caused by a magnetic field are considered. It is supposed that the reason of a long-term relaxation in Si-SiO2 - structures are a diffusion and reactions of nonequilibrium defects, arising at relaxations of polarization of nuclear spin system, in InSb, InAs the diffusion passes on mechanism of transfer of defect of a type 'broken off connection'.","PeriodicalId":276773,"journal":{"name":"Material Science and Material Properties for Infrared Optics","volume":"126 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1997-08-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Magnetic field-induced prolonged changes of electric parameters of infrared MOS-photodetectors\",\"authors\":\"A. Voitsekhovskii, V. Davydov, S. Nesmelov\",\"doi\":\"10.1117/12.280442\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Influence of a weak magnetic field on photo-electric, electrophysical characteristics of MIS - structures is experimentally investigated.Long-term changes of a spectrum of surface states of Si-SiO2-structures, caused by a magnetic field are considered. It is supposed that the reason of a long-term relaxation in Si-SiO2 - structures are a diffusion and reactions of nonequilibrium defects, arising at relaxations of polarization of nuclear spin system, in InSb, InAs the diffusion passes on mechanism of transfer of defect of a type 'broken off connection'.\",\"PeriodicalId\":276773,\"journal\":{\"name\":\"Material Science and Material Properties for Infrared Optics\",\"volume\":\"126 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1997-08-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Material Science and Material Properties for Infrared Optics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1117/12.280442\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Material Science and Material Properties for Infrared Optics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1117/12.280442","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Magnetic field-induced prolonged changes of electric parameters of infrared MOS-photodetectors
Influence of a weak magnetic field on photo-electric, electrophysical characteristics of MIS - structures is experimentally investigated.Long-term changes of a spectrum of surface states of Si-SiO2-structures, caused by a magnetic field are considered. It is supposed that the reason of a long-term relaxation in Si-SiO2 - structures are a diffusion and reactions of nonequilibrium defects, arising at relaxations of polarization of nuclear spin system, in InSb, InAs the diffusion passes on mechanism of transfer of defect of a type 'broken off connection'.
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