Epitaxial structures based on narrow band-gap InAs1-x-ySbxBiy solid solutions

Material Science and Material Properties for Infrared Optics Pub Date : 1997-08-26 DOI:10.1117/12.280459

R. Akchurin, V. Zhegalin, T. Sakharova, S. Seregin

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引用次数: 1

Abstract

The technique of InAs1-x-ySbxBiy/InSb heterostructures forming by LPE was developed to obtain semiconductor material with intrinsic absorption edge (gamma) > 8 micrometers at 77K. Smooth epilayers with x equals 0.88-0.97 and y equals 0.0016-0.0036 were grown on InSb(111)A substrates in 380 450 degrees C temperature range. Eg(77K) values, obtained from optical absorption spectra measurements, were found to decrease by 0.017-0.020 eV as compared to InAs1-xSbx with the same x. The possibilities of InAs1-x-ySbxBiy/InSb strained multilayer heterostructures as semiconductor material for long- wavelength applications have been analyzed. Results of our calculation demonstrate that the strain-induced energy band- gap shift in such structures enables the attainment of 0.07- 0.15 eV Eg values at 77K for 0.82 < x < 0.94 composition range. The obtaining of strained multilayer heterostructures with layer thickness 1-x-ySbxBiy/InSb1-yBiy/InSb multilayer heterostructures with epilayer thicknesses from 0.05 to 0.2 micrometers depending on growth conditions can be successfully obtained by LPE.

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基于窄带隙InAs1-x-ySbxBiy固溶体的外延结构

采用LPE形成InAs1-x-ySbxBiy/InSb异质结构的技术，在77K下获得了具有>.8微米本征吸收边的半导体材料。在380 ~ 450℃的温度范围内，在InSb(111)A衬底上生长出x = 0.88 ~ 0.97、y = 0.0016 ~ 0.0036的光滑脱毛膜。通过光学吸收光谱测量得到的Eg(77K)值与相同x值的InAs1-xSbx相比降低了0.017-0.020 eV。分析了InAs1-x-ySbxBiy/InSb应变多层异质结构作为长波长半导体材料的可能性。计算结果表明，在0.82 < x < 0.94的组成范围内，这种结构中应变引起的能带位移使其在77K下的Eg值达到0.07 ~ 0.15 eV。通过LPE可以成功获得层厚为1-x-ySbxBiy/InSb1-yBiy/InSb的应变多层异质结构，薄膜厚度根据生长条件的不同在0.05 ~ 0.2微米之间。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Material Science and Material Properties for Infrared Optics

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