{"title":"由不同纯度初始组分生长的大块Hg0.8Cd0.2Te晶体的比较研究","authors":"K. Kurbanov, V. Bogoboyashchiy","doi":"10.1117/12.368413","DOIUrl":null,"url":null,"abstract":"Bulk Hg0.8Cd0.2Te crystals still are widely used as a base material for manufacturing IR photoreceivers for the 8-14 micrometers wavelengths range. As these purposes need the material with high mobility of electrons and very low concentration of impurities, problems of purity of the components, used for preparation of it, acquire prime significance.","PeriodicalId":276773,"journal":{"name":"Material Science and Material Properties for Infrared Optics","volume":"24 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1999-11-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Comparative study of bulk Hg0.8Cd0.2Te crystals grown from initial components of varying purity\",\"authors\":\"K. Kurbanov, V. Bogoboyashchiy\",\"doi\":\"10.1117/12.368413\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Bulk Hg0.8Cd0.2Te crystals still are widely used as a base material for manufacturing IR photoreceivers for the 8-14 micrometers wavelengths range. As these purposes need the material with high mobility of electrons and very low concentration of impurities, problems of purity of the components, used for preparation of it, acquire prime significance.\",\"PeriodicalId\":276773,\"journal\":{\"name\":\"Material Science and Material Properties for Infrared Optics\",\"volume\":\"24 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1999-11-04\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Material Science and Material Properties for Infrared Optics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1117/12.368413\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Material Science and Material Properties for Infrared Optics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1117/12.368413","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Comparative study of bulk Hg0.8Cd0.2Te crystals grown from initial components of varying purity
Bulk Hg0.8Cd0.2Te crystals still are widely used as a base material for manufacturing IR photoreceivers for the 8-14 micrometers wavelengths range. As these purposes need the material with high mobility of electrons and very low concentration of impurities, problems of purity of the components, used for preparation of it, acquire prime significance.
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