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Material Science and Material Properties for Infrared Optics最新文献

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High-quality lead telluride films grown on silicon with buffer porous silicon layers 高质量碲化铅薄膜生长在硅与缓冲多孔硅层
Material Science and Material Properties for Infrared Optics Pub Date : 1999-11-04 DOI: 10.1117/12.368406
S. Zimin, M. N. Preobrazhensky, D. Zimin
{"title":"High-quality lead telluride films grown on silicon with buffer porous silicon layers","authors":"S. Zimin, M. N. Preobrazhensky, D. Zimin","doi":"10.1117/12.368406","DOIUrl":"https://doi.org/10.1117/12.368406","url":null,"abstract":"The structural characteristics of vacuum deposited PbTe films on Si substrate with buffer porous silicon layer were investigated. It was found, that films have orientation along the growth direction. Electron and optical microscopy data have shown the absence of flaws, pores, metal and chalcogen microinclusions. Mosaic structure with a grain size 20-60 micrometers was detected by selective chemical etching and acoustic microscopy methods. Single-crystal structure of grains was shown from the investigations of x-ray pole figures. It was found that thick amorphous layers on a porous silicon surface change the nature of PbTe films growth.","PeriodicalId":276773,"journal":{"name":"Material Science and Material Properties for Infrared Optics","volume":"183 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-11-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122078462","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Influence of particle multipole interaction on the absorption spectra of radiation in metallic composites 粒子多极相互作用对金属复合材料辐射吸收光谱的影响
Material Science and Material Properties for Infrared Optics Pub Date : 1999-11-04 DOI: 10.1117/12.368387
L. Grechko, V. Pustovit, S. Shostak
{"title":"Influence of particle multipole interaction on the absorption spectra of radiation in metallic composites","authors":"L. Grechko, V. Pustovit, S. Shostak","doi":"10.1117/12.368387","DOIUrl":"https://doi.org/10.1117/12.368387","url":null,"abstract":"A theoretical approach is formulated for the calculation of the macroscopic dielectric response of a collection of spheres at random positions embedded in a homogeneous medium. It is found that there are appreciable deviations from the Maxwell-Garnett formula. It is noted that with volume fraction increasing the pair multiple interactions between inclusions become significant. We also investigated numerically the way in which the absorption peak is modified by the contributions due to multiple interactions between inclusions.","PeriodicalId":276773,"journal":{"name":"Material Science and Material Properties for Infrared Optics","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-11-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123947261","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Impurity profile determination by the optimal parameter choice method 用最优参数选择法测定杂质剖面
Material Science and Material Properties for Infrared Optics Pub Date : 1999-11-04 DOI: 10.1117/12.368368
L. Karachevtseva, V. D. Sobolev, I. Demina
{"title":"Impurity profile determination by the optimal parameter choice method","authors":"L. Karachevtseva, V. D. Sobolev, I. Demina","doi":"10.1117/12.368368","DOIUrl":"https://doi.org/10.1117/12.368368","url":null,"abstract":"Model of the influence of the shallow and deep impurity level profiles on the capacitance relaxation curves was made using the optimal parameter choice method. There were established that the shallow impurity profile decay and the deep impurity profile growth increase the dimensionless time. Besides it the shallow impurity profile growth and the deep impurity profile decay decrease. Such effects give rise the undervalue of the dimensionless capacitance (omega) for the first case and overvalue (omega) for the second one. The received expressions for increment d may be used for the quantitative estimation of the shallow and deep impurity profiles without procedure of the differentiation of the experimental C-t-curves. That permit to increase the accuracy of the impurity profile determination.","PeriodicalId":276773,"journal":{"name":"Material Science and Material Properties for Infrared Optics","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-11-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124670519","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Electronic properties and energy spectrum of SnTe doped with In 掺In的SnTe的电子特性和能谱
Material Science and Material Properties for Infrared Optics Pub Date : 1999-11-04 DOI: 10.1117/12.368383
E. Rogacheva, S. A. Laptev
{"title":"Electronic properties and energy spectrum of SnTe doped with In","authors":"E. Rogacheva, S. A. Laptev","doi":"10.1117/12.368383","DOIUrl":"https://doi.org/10.1117/12.368383","url":null,"abstract":"The temperature and concentration dependences of electrical conductivity (sigma) , Hall coefficient RH and coefficient of thermo-e.m.f. S for the samples of the SnTe solid solutions are obtained. On the basis of experimental data the model of energy spectrum of SnTe doped with In taking into account the high concentration of nonstoichiometric vacancies in SnTe and variable valency of the In atoms is proposed. According to the model the valence band contains tow resonance bands corresponding to the In atoms localized in octa- and tetrahedral positions. The vacancy band is the lowest on the energy scale of the valence band, followed by impurity bands. The gaps and their temperature dependencies, carried mobilities in the different impurity bands are obtained. The doping mechanism of In introduced in different proportions with vacancies is determined by impurity band state occupation in consecutive order according to their location on the energy scale and by the Fermi level position. The Fermi level is located in one of the impurity bands depending on proportion of In1+ and In3+ atoms and vacancies.","PeriodicalId":276773,"journal":{"name":"Material Science and Material Properties for Infrared Optics","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-11-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125684197","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Influence of processing C60 fullerite by pressing on its crystalline structure and magnetic properties 加压处理C60富勒石对其晶体结构和磁性能的影响
Material Science and Material Properties for Infrared Optics Pub Date : 1999-11-04 DOI: 10.1117/12.368366
A. V. Brodovoi, V. Kolesnichenko, L. Kolomiyets, S. Solonin, V. Skorokhod, B. Bulakh, S. Koleśnik
{"title":"Influence of processing C60 fullerite by pressing on its crystalline structure and magnetic properties","authors":"A. V. Brodovoi, V. Kolesnichenko, L. Kolomiyets, S. Solonin, V. Skorokhod, B. Bulakh, S. Koleśnik","doi":"10.1117/12.368366","DOIUrl":"https://doi.org/10.1117/12.368366","url":null,"abstract":"In the current work the changes in a crystalline structure and the change of magnetic and resonant properties occurring in the powder of fullerite, deformed under conditions of free upsetting at room temperature have been investigated. The analysis of the ratio of the discovered broadening of x- ray reflexes allows believing that broadening is caused by microstresses, which have rather a great value. According to ESR research data the supposition has been made that torn off valence bonds of atoms of carbon, which appear because of mechanical damages under the deformation, are responsible for the changes of magnetic properties observed.","PeriodicalId":276773,"journal":{"name":"Material Science and Material Properties for Infrared Optics","volume":"58 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-11-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120983525","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Influence of growth condition and radiation on infrared exciton reflection spectrum of black zinc diphosphide 生长条件和辐射对黑二磷化锌红外激子反射光谱的影响
Material Science and Material Properties for Infrared Optics Pub Date : 1999-11-04 DOI: 10.1117/12.368401
A. Kudin
{"title":"Influence of growth condition and radiation on infrared exciton reflection spectrum of black zinc diphosphide","authors":"A. Kudin","doi":"10.1117/12.368401","DOIUrl":"https://doi.org/10.1117/12.368401","url":null,"abstract":"For the first time the effect of ionizing particles of different type and of condition of growth from gaseous phase upon exciton spectra of black zinc diphosphide has been studied. It was shown that the defects of phosphorus sublattice which are the principal centers of optical activity in the IR, are responsible for structural evolution of black zinc diphosphide crystals in the process of their growth and interaction with radiation of different types.","PeriodicalId":276773,"journal":{"name":"Material Science and Material Properties for Infrared Optics","volume":"47 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-11-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127623803","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Anisotropic thermoelectric devices for the registration of IR-range intensive radiant flows 用于红外强辐射流记录的各向异性热电装置
Material Science and Material Properties for Infrared Optics Pub Date : 1999-11-04 DOI: 10.1117/12.368337
A. A. Ascheulov, I. .. Gutsul, Yu. Ye. Nikolayenko, A. Rarenko, V. Dobrovolskiy, I. S. Romanyuk
{"title":"Anisotropic thermoelectric devices for the registration of IR-range intensive radiant flows","authors":"A. A. Ascheulov, I. .. Gutsul, Yu. Ye. Nikolayenko, A. Rarenko, V. Dobrovolskiy, I. S. Romanyuk","doi":"10.1117/12.368337","DOIUrl":"https://doi.org/10.1117/12.368337","url":null,"abstract":"The possibility to register radiant flow using transverse thermo-emf effect is considered. It is shown, that in optical transmission case there is a possibility to create convertors, allowing to control radiant flows in wide energy limits.","PeriodicalId":276773,"journal":{"name":"Material Science and Material Properties for Infrared Optics","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-11-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127831801","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Low-temperature anomalies of the photomagnetic effect in p-Hg1-xCdxTe p-Hg1-xCdxTe光磁效应的低温异常
Material Science and Material Properties for Infrared Optics Pub Date : 1999-11-04 DOI: 10.1117/12.368367
S. Gasan-zade, G. Shepelskiĭ, M. Strikha
{"title":"Low-temperature anomalies of the photomagnetic effect in p-Hg1-xCdxTe","authors":"S. Gasan-zade, G. Shepelskiĭ, M. Strikha","doi":"10.1117/12.368367","DOIUrl":"https://doi.org/10.1117/12.368367","url":null,"abstract":"Peculiarities of anomalous photoelectromagnetic effect in p- Hg1-xCdxTe at low temperatures were observed experimentally. They can be unambiguously connected with the 'freezing out' of the holes. In this case the electron component of current becomes essential due to sharp asymmetry of the values of electron and hole mobilities. The transition of the anomalous photoelectromagnetic effect into normal one with the increase of H is connected with a decrease of effective length of a bipolar diffusion up to linear size of the space charge region.","PeriodicalId":276773,"journal":{"name":"Material Science and Material Properties for Infrared Optics","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-11-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133504672","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Acoustodynamic influence on electronic properties of CdxHg1-xTe alloys 声动力对CdxHg1-xTe合金电子性能的影响
Material Science and Material Properties for Infrared Optics Pub Date : 1999-11-04 DOI: 10.1117/12.368415
Y. Olikh, R. Savkina, A. Vlasenko
{"title":"Acoustodynamic influence on electronic properties of CdxHg1-xTe alloys","authors":"Y. Olikh, R. Savkina, A. Vlasenko","doi":"10.1117/12.368415","DOIUrl":"https://doi.org/10.1117/12.368415","url":null,"abstract":"The results of the investigations of the transport properties of n- and p-CdxHg1-xTe semiconductor crystals behavior at intensive ultrasonic are presented. Acoustostimulated phenomenon of mobility increasing and change of concentration are observed in region of impurity conductivity. The possible mechanisms of the acoustodynamic processes are analyzed. At first the phenomenon of the acoustostimulated p yields n conversion had been detected in p-CdxHg1-xTe at T < 120 K.","PeriodicalId":276773,"journal":{"name":"Material Science and Material Properties for Infrared Optics","volume":"116 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-11-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132322453","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Vertical transport in GaAs/GaAlAs QW-GRIN structures studied by photocurrent spectroscopy 光电流光谱研究GaAs/GaAlAs QW-GRIN结构中的垂直输运
Material Science and Material Properties for Infrared Optics Pub Date : 1999-11-04 DOI: 10.1117/12.368330
K. Herrmann, J. Tomm
{"title":"Vertical transport in GaAs/GaAlAs QW-GRIN structures studied by photocurrent spectroscopy","authors":"K. Herrmann, J. Tomm","doi":"10.1117/12.368330","DOIUrl":"https://doi.org/10.1117/12.368330","url":null,"abstract":"GaAs/GaAlAs quantum well (QW) structures for graded index (GRIN) near IR injection lasers have been studied by polarization dependent photocurrent spectroscopy in the spectral region of QW transitions and in a wide range of temperatures 20 K <EQ T <EQ 375 K. The photocurrent has been measured under short-circuit conditions for the electric vector of the light wave parallel to the plane of the waveguide (TE) as well as perpendicular to the plane of the waveguide (TM). Distinct edges are observed in the quantum efficiency spectra and attributed to the onset of transitions form the heavy hole to electron and light hole to electron subbands, respectively. The observation of different spectral features in TE and TM spectra is discussed in terms of selection rules and mode coupling into the waveguide. Edge positions are compared with calculations of the well states. Coulomb interaction manifests itself in the occurrence of n equals 1 excitonic lines at the hh1-e1, 1h1-e1 and 1h2-e2 subband edges. Temperature dependent measurements indicate mechanisms for carrier escape form the QW. At intermediate temperatures the photocurrent is thermally activated, an explanation in terms of thermionic emission theory is given, and the justification of assuming thermalized non-equilibrium carriers is discussed for different transitions. The observed activation energy is correlated with the energy scale in the QW. At low temperatures the temperature dependence is weak, carrier escape is explained by tunnelling. At the highest temperatures the quantum efficiency decreases again, this is attributed to the growing influence of recombination.","PeriodicalId":276773,"journal":{"name":"Material Science and Material Properties for Infrared Optics","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-11-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117294020","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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