{"title":"声动力对CdxHg1-xTe合金电子性能的影响","authors":"Y. Olikh, R. Savkina, A. Vlasenko","doi":"10.1117/12.368415","DOIUrl":null,"url":null,"abstract":"The results of the investigations of the transport properties of n- and p-CdxHg1-xTe semiconductor crystals behavior at intensive ultrasonic are presented. Acoustostimulated phenomenon of mobility increasing and change of concentration are observed in region of impurity conductivity. The possible mechanisms of the acoustodynamic processes are analyzed. At first the phenomenon of the acoustostimulated p yields n conversion had been detected in p-CdxHg1-xTe at T < 120 K.","PeriodicalId":276773,"journal":{"name":"Material Science and Material Properties for Infrared Optics","volume":"116 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1999-11-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Acoustodynamic influence on electronic properties of CdxHg1-xTe alloys\",\"authors\":\"Y. Olikh, R. Savkina, A. Vlasenko\",\"doi\":\"10.1117/12.368415\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The results of the investigations of the transport properties of n- and p-CdxHg1-xTe semiconductor crystals behavior at intensive ultrasonic are presented. Acoustostimulated phenomenon of mobility increasing and change of concentration are observed in region of impurity conductivity. The possible mechanisms of the acoustodynamic processes are analyzed. At first the phenomenon of the acoustostimulated p yields n conversion had been detected in p-CdxHg1-xTe at T < 120 K.\",\"PeriodicalId\":276773,\"journal\":{\"name\":\"Material Science and Material Properties for Infrared Optics\",\"volume\":\"116 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1999-11-04\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Material Science and Material Properties for Infrared Optics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1117/12.368415\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Material Science and Material Properties for Infrared Optics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1117/12.368415","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Acoustodynamic influence on electronic properties of CdxHg1-xTe alloys
The results of the investigations of the transport properties of n- and p-CdxHg1-xTe semiconductor crystals behavior at intensive ultrasonic are presented. Acoustostimulated phenomenon of mobility increasing and change of concentration are observed in region of impurity conductivity. The possible mechanisms of the acoustodynamic processes are analyzed. At first the phenomenon of the acoustostimulated p yields n conversion had been detected in p-CdxHg1-xTe at T < 120 K.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
