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Material Science and Material Properties for Infrared Optics最新文献

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New optical materials for an infrared technique based on cadmium telluride 基于碲化镉的新型红外光学材料
Material Science and Material Properties for Infrared Optics Pub Date : 1999-11-04 DOI: 10.1117/12.368393
A. V. Savitsky, V. R. Burachek, O. Parfenyuk, M. Ilashchuk, K. S. Ulyanitsky
{"title":"New optical materials for an infrared technique based on cadmium telluride","authors":"A. V. Savitsky, V. R. Burachek, O. Parfenyuk, M. Ilashchuk, K. S. Ulyanitsky","doi":"10.1117/12.368393","DOIUrl":"https://doi.org/10.1117/12.368393","url":null,"abstract":"The main results of complex physical-technological research for undoped and controllable doped with different impurities CdTe crystals are presented. THe doped by impurities of IV groups elements and isoelectronic impurities crystals, which characterizing high transmission in the wide spectral range, can be successfully used at the development and fabrication of high effective optical IR devices elements. Doping of elements with un-filled 3D-shells can greatly reduce a transparency of crystal in RI range of spectrum. The physical properties of semi-insulating CdTe:Ge(Sn) and CdTe:Ti(V,Ni) crystals determined by deep local levels, placed in the field of middle of forbidden band that specified admixtures stipulated by compensating action of in CdTe. Such crystals perspective for photorefractive using in telecommunicative networks.","PeriodicalId":276773,"journal":{"name":"Material Science and Material Properties for Infrared Optics","volume":"15 2 Pt 1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-11-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116852474","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Characterization of diffusion length of minority carriers in (CdZn)Te at temperatures of 80 to 300 K 80 ~ 300 K时(CdZn)Te中少数载流子扩散长度的表征
Material Science and Material Properties for Infrared Optics Pub Date : 1999-11-04 DOI: 10.1117/12.368349
J. Franc, E. Belas, P. Hlídek, A. Tóth, H. Sitter, R. Grill, P. Hoeschl, P. Moravec
{"title":"Characterization of diffusion length of minority carriers in (CdZn)Te at temperatures of 80 to 300 K","authors":"J. Franc, E. Belas, P. Hlídek, A. Tóth, H. Sitter, R. Grill, P. Hoeschl, P. Moravec","doi":"10.1117/12.368349","DOIUrl":"https://doi.org/10.1117/12.368349","url":null,"abstract":"Diffusion length (L) of minority carriers was determined in not intentionally doped Cd0.93Zn0.07Te single crystals by the EBIC method at temperatures 80-300K using an evaporated Au Schottky barrier for a separation of electron- hole pairs. The L values in P-(CdZn)Te were longer, than those of the binary CdTe and some showed a steep increase with decreasing temperature. The correlation of the diffusion length measurements with photoluminescence for the (CdZn)Te was observed. Temperature dependence of L for holes in N-(CdZn)Te fabricated by In diffusion were measured as well.","PeriodicalId":276773,"journal":{"name":"Material Science and Material Properties for Infrared Optics","volume":"47 25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-11-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116551250","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Thermodiffusion in Si-X-Ge33As12Se55 (X:Sb,Bi) interface Si-X-Ge33As12Se55 (X:Sb,Bi)界面的热扩散
Material Science and Material Properties for Infrared Optics Pub Date : 1999-11-04 DOI: 10.1117/12.368410
N. Dovgoshej, O. Kondrat, T. Shchurova, N. Savchenko
{"title":"Thermodiffusion in Si-X-Ge33As12Se55 (X:Sb,Bi) interface","authors":"N. Dovgoshej, O. Kondrat, T. Shchurova, N. Savchenko","doi":"10.1117/12.368410","DOIUrl":"https://doi.org/10.1117/12.368410","url":null,"abstract":"Thin films of 1,000-nm thickness were deposited from Ge33As12Se55 glass by flash evaporation onto n-Si substances coated with thermally evaporated antimony or bismuth layer of 10-nm thickness. Thermal annealing of the structure has been conducted at a temperature of 450 K during 90 minutes. The main parameters of the thermodiffusion processes have been determined by the capacitor-voltage characteristics. Energy bands discontinuity on the n-Si-X-Ge33As12Se55 interface after thermodiffusion of antimony and bismuth atoms have been found to be for the conduction band 0.61 and 0.86 eV, and for the valence band 0.08 and 0.17 eV, respectively. The diffusion in Ge33As12Se55 film for antimony atom differs from that for the bismuth ones. It has been found that the diffusion processes were more intensive for antimony atoms and both types of the impurity atom exhibited nonuniform profiles. The diffusion coefficients for antimony and bismuth atoms in the near- surface layer of Ge33As12Se55 film have been found to be respectively, 2.1 X 10-14 and 2.3 X 10-15 cm2/s. Inside the film the coefficients are 3.0 X 10-14 and 1.2 X 10-13 cm2/s. The higher intensity of the diffusion for antimony atoms has been related to the lower values for their atomic radii.","PeriodicalId":276773,"journal":{"name":"Material Science and Material Properties for Infrared Optics","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-11-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125527141","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Model for a technological procedure of chemical profile etching 化学轮廓蚀刻工艺过程模型
Material Science and Material Properties for Infrared Optics Pub Date : 1999-11-04 DOI: 10.1117/12.368409
Myhailo Y. Kravetsky, A. Lyubchenko, A. Fomin
{"title":"Model for a technological procedure of chemical profile etching","authors":"Myhailo Y. Kravetsky, A. Lyubchenko, A. Fomin","doi":"10.1117/12.368409","DOIUrl":"https://doi.org/10.1117/12.368409","url":null,"abstract":"A simple model for the chemical profile etching is considered. The process is shown to substantially depend on the gap between the sample and the tool. Some experimental results are given that support the theoretical predictions made. These results serve as a basis for an attempt to apply the model considered to more complicated cases.","PeriodicalId":276773,"journal":{"name":"Material Science and Material Properties for Infrared Optics","volume":"67 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-11-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131053064","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Multilayer structures based on variable-gap semiconductors: carrier redistribution phenomena during current transfer 基于可变间隙半导体的多层结构:电流转移过程中的载流子重分布现象
Material Science and Material Properties for Infrared Optics Pub Date : 1999-11-04 DOI: 10.1117/12.368377
V. G. Savitsky, Bogdan S. Sokolovsky, V. Pysarevsky
{"title":"Multilayer structures based on variable-gap semiconductors: carrier redistribution phenomena during current transfer","authors":"V. G. Savitsky, Bogdan S. Sokolovsky, V. Pysarevsky","doi":"10.1117/12.368377","DOIUrl":"https://doi.org/10.1117/12.368377","url":null,"abstract":"The paper theoretically investigates the peculiarities of carrier redistribution taking place in periodic semiconductor variable-gap multilayer structures during current transfer in the direction perpendicular to the layers. It is studied in detail the cases of homogeneously doped symmetric and asymmetric structures with linear coordinate dependence of energy gap. Current transport in variable multilayer structures is shown to accompany with the substantial spatial redistribution of minority carriers resulting in deviation of carrier concentration from its equilibrium value. At strong fields the practically constant carrier concentration is set up in almost the whole volume of structure for the exception of thin regions in the vicinity of the interfaces. In the case of asymmetric structures carrier redistribution can give rise to changing the total number of carriers what is displayed on current- voltage characteristics.","PeriodicalId":276773,"journal":{"name":"Material Science and Material Properties for Infrared Optics","volume":"46 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-11-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129262921","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Photoelectric and kinetic properties of PbTe(Ga) films PbTe(Ga)薄膜的光电和动力学性质
Material Science and Material Properties for Infrared Optics Pub Date : 1999-11-04 DOI: 10.1117/12.368358
B. Akimov, V. A. Bogoyavlenskiy, L. Ryabova, V. N. Vasil'kov
{"title":"Photoelectric and kinetic properties of PbTe(Ga) films","authors":"B. Akimov, V. A. Bogoyavlenskiy, L. Ryabova, V. N. Vasil'kov","doi":"10.1117/12.368358","DOIUrl":"https://doi.org/10.1117/12.368358","url":null,"abstract":"The photoelectric and kinetic properties of n-PbTe(Ga) films prepare don the BaF2 and Si substrates by hot wall epitaxy technique have been investigated in the temperature T interval 4.2 divided by 300 K. The photoelectric measurements show that all photosensitive samples may be divided into two groups characterized by positive and negative photosensitivity to IR-illumination at temperatures close to 4.2 K. The kinetics of positively photosensitive films is found to be similar to the kinetics of the bulk n-PbTe(Ga) single crystals of high resistance. The photoresponse of negatively photosensitive films appears to be composed from two parts. They are the dominant negative photosensitivity and a positive photoconductivity signal characterized by significantly faster kinetics. The experimental result are discussed in terms of DX-like behavior of the impurity centers.","PeriodicalId":276773,"journal":{"name":"Material Science and Material Properties for Infrared Optics","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-11-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129915418","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Epitaxial lead-chalcogenide on silicon layers for thermal imaging applications 用于热成像应用的硅层外延铅硫族化物
Material Science and Material Properties for Infrared Optics Pub Date : 1999-11-04 DOI: 10.1117/12.368352
H. Zogg
{"title":"Epitaxial lead-chalcogenide on silicon layers for thermal imaging applications","authors":"H. Zogg","doi":"10.1117/12.368352","DOIUrl":"https://doi.org/10.1117/12.368352","url":null,"abstract":"Narrow gap Pb1-xSnxSe and PbTe layers grown epitaxially on Si(111)-substrates by molecular beam epitaxy (MBE) exhibit high quality despite the large lattice and thermal expansion mismatch. A buffer layer of CaF2 is employed for compatibility. Due to easy glide of misfit dislocations in the lead chalcogenide layers, thermal strains relax even at cryogenic temperatures and after many temperature cycling. This is partly due to the NaCl- structure of lead salts and at variance to the zinkblende- type semiconductors. In addition, the high permittivity of lead chalcodenides which effectively shields the electric fields from charged defects makes the materials rather forgiving, i.e. higher quality devices are obtained from lower quality material, again at variance to Hg1-xCdxTe or GaAs related compounds. Photovoltaic p-n or Schottky-barrier sensor arrays are delineated by using standard photolithography. At low temperatures, the ultimate sensitivities are presently limited by defects, mainly dislocations. At higher temperatures, the ultimate theoretical sensitivity have been obtained in Schottky barrier devices, this despite the large mismatch and only 3 micrometers thickness of the layers. Due to the rather low temperatures used during the MBE and delineation, sensor arrays are obtained by postprocessing even on active Si- substrates. We describe ways to further improve device performance by lowering the dislocation densities in the lattice mismatched layers. This is achieved by temperature rampings, which drive out the threading dislocations from the active parts of the sensors. Presently, densities of 1 X 106 cm-2 in layers of a few micrometer thickness are obtained. These densities are sufficiently low in order not to dominate the leakage currents in real devices even at 80K temperatures.","PeriodicalId":276773,"journal":{"name":"Material Science and Material Properties for Infrared Optics","volume":"163 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-11-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127418203","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Influence of uniaxial pressure on the photoionization of h-centers in semiconductors 单轴压力对半导体中h中心光离的影响
Material Science and Material Properties for Infrared Optics Pub Date : 1999-11-04 DOI: 10.1117/12.368356
A. Abramov, V. Akimov, A. Dalakyan, D. Firsov, V. Tulupenko, F. Vasko
{"title":"Influence of uniaxial pressure on the photoionization of h-centers in semiconductors","authors":"A. Abramov, V. Akimov, A. Dalakyan, D. Firsov, V. Tulupenko, F. Vasko","doi":"10.1117/12.368356","DOIUrl":"https://doi.org/10.1117/12.368356","url":null,"abstract":"Photoionization cross section of holes localization on deep centers with short distance potential at their transitions to the valence band of the uniaxially deformed semiconductor like Ge has been calculated. Because of splitting both acceptor level and extremum of hole subbands, photoionization threshold splits also - four kinds of such transitions appear. While growing temperature, the alteration of population of splitted impurity states occurs. It result in changing contribution of each kind of transitions to the absorption coefficient. As deformation disturbs spherical symmetry of the problem, appreciable polarization dependence of absorption coefficient appears. The calculation is based on the general quantum mechanic formula with transition matrix element using wave function of impurity center under deformation.","PeriodicalId":276773,"journal":{"name":"Material Science and Material Properties for Infrared Optics","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-11-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114344401","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Light scattering in a filled nematic cell 充满的向列细胞中的光散射
Material Science and Material Properties for Infrared Optics Pub Date : 1999-11-04 DOI: 10.1117/12.368369
Mikhailo F. Lednei, I. Pinkevich, V. Reshetnyak
{"title":"Light scattering in a filled nematic cell","authors":"Mikhailo F. Lednei, I. Pinkevich, V. Reshetnyak","doi":"10.1117/12.368369","DOIUrl":"https://doi.org/10.1117/12.368369","url":null,"abstract":"The light scattering differential cross-section by small identical spherical particles in nematic liquid crystal is numerically calculated at the infinitely rigid director anchoring with particles surface. It is taking into account the influence of the correlations between the positions of the particles.","PeriodicalId":276773,"journal":{"name":"Material Science and Material Properties for Infrared Optics","volume":"1 4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-11-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121026175","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Thermally induced currents and instabilities of photoresponse in PbTe(In)-based films PbTe(in)基薄膜的热感应电流和光响应的不稳定性
Material Science and Material Properties for Infrared Optics Pub Date : 1999-11-04 DOI: 10.1117/12.368357
B. Akimov, V. A. Bogoyavlenskiy, L. Ryabova, V. N. Vasil'kov
{"title":"Thermally induced currents and instabilities of photoresponse in PbTe(In)-based films","authors":"B. Akimov, V. A. Bogoyavlenskiy, L. Ryabova, V. N. Vasil'kov","doi":"10.1117/12.368357","DOIUrl":"https://doi.org/10.1117/12.368357","url":null,"abstract":"The thermally induced currents (TIC) and instabilities of photoresponse in Pb1-x-ySnxGeyTe(IN) films on BaF2 substrates have been investigated at temperatures 4.2 < T < 30 K. The temperature TM corresponding to maximum values of single TIC peaks appears to be extremely low varying from 6 K up to 14 K. The combined effect of lighting and slight heating of the sample from 4.2 K up to approximately 6 K results in photoresponse instabilities depending on the experimental regime. The results are interpreted in terms of thermal excitation of charge carriers from metastable impurity level.","PeriodicalId":276773,"journal":{"name":"Material Science and Material Properties for Infrared Optics","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-11-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130159225","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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