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Material Science and Material Properties for Infrared Optics最新文献

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Peculiarity of optical and electrical properties of ferromagnetic semiconductors with dynamical superlattice on hot electrons 热电子上具有动态超晶格的铁磁半导体的光学和电学特性
Material Science and Material Properties for Infrared Optics Pub Date : 1999-11-04 DOI: 10.1117/12.368390
O. Semchuk, L. Grechko, V. Ogenko, V. V. Gogenko
{"title":"Peculiarity of optical and electrical properties of ferromagnetic semiconductors with dynamical superlattice on hot electrons","authors":"O. Semchuk, L. Grechko, V. Ogenko, V. V. Gogenko","doi":"10.1117/12.368390","DOIUrl":"https://doi.org/10.1117/12.368390","url":null,"abstract":"In this work we carry out the investigation of the dynamical superlattices on nonequilibrium electrons and magnons in ferromagnetic semiconductors (FMSC) and their influence on the propagation and absorption of the electromagnetic waves in FMSC at the dynamical regime. The first and the second terms of the HF-current was calculated. It is shown that the presence of the dynamical superlattice of electron density will lead to the modulation of the electromagnetic wave absorption coefficient of FMSC, that can be detected by the changes of outgoing intensity of the sensing wave passed through FMSC crystal.","PeriodicalId":276773,"journal":{"name":"Material Science and Material Properties for Infrared Optics","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-11-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122942304","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Radiation defect band in Pb1-xSnxSe(x<0.03) alloys irradiated with electrons 电子辐照Pb1-xSnxSe(x<0.03)合金的辐射缺陷带
Material Science and Material Properties for Infrared Optics Pub Date : 1999-11-04 DOI: 10.1117/12.368379
E. Skipetrov, E. Zvereva, B. Kovalev, A. Mousalitin, L. Skipetrova
{"title":"Radiation defect band in Pb1-xSnxSe(x<0.03) alloys irradiated with electrons","authors":"E. Skipetrov, E. Zvereva, B. Kovalev, A. Mousalitin, L. Skipetrova","doi":"10.1117/12.368379","DOIUrl":"https://doi.org/10.1117/12.368379","url":null,"abstract":"The effect of hydrostatic pressure on the galvanomagnetic properties has been investigated. It was shown that the hole concentration increase under pressure due to the motion of the energy bands at the Brillouin zOne L-point and the flow of electrons from the valence band to the radiation defect band Et1. Obtained experimental data were used to determine the parameters of irradiation-induced defect band Et1 by comparing theoretical and experimental pressure dependencies of hole concentration.","PeriodicalId":276773,"journal":{"name":"Material Science and Material Properties for Infrared Optics","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-11-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127563876","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Doping effect on concentration dependence of the diffusion coefficient in semiconductors 掺杂对半导体扩散系数浓度依赖性的影响
Material Science and Material Properties for Infrared Optics Pub Date : 1999-11-04 DOI: 10.1117/12.368372
L. Monastyrskii, Bogdan S. Sokolovsky
{"title":"Doping effect on concentration dependence of the diffusion coefficient in semiconductors","authors":"L. Monastyrskii, Bogdan S. Sokolovsky","doi":"10.1117/12.368372","DOIUrl":"https://doi.org/10.1117/12.368372","url":null,"abstract":"New expression for the concentration dependence of diffusion coefficient of ionized impurity in semiconductors which is valid the whole range of carrier degeneracy is derived. It is shown that due to reduction of the impurity field screening by mobile carriers at degenerate conditions the diffusion coefficient is a monotonously increasing function of the impurity concentration. Taking the band gap narrowing into account is found to result in a reduction of the diffusion coefficient in comparison with that corresponding to the case of unperturbed band structure, and a decreasing concentration dependence of the diffusion coefficient can be realized at relatively low impurity concentrations.","PeriodicalId":276773,"journal":{"name":"Material Science and Material Properties for Infrared Optics","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-11-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124306411","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Peculiarities of preparation and main optical properties of zinctetratiogallate films 锌掺杂镓酸盐薄膜的制备特点及主要光学性质
Material Science and Material Properties for Infrared Optics Pub Date : 1999-11-04 DOI: 10.1117/12.368402
N. Popovich, I. É. Kacher, N. Dovgoshej, Yu. Tomashpolskij
{"title":"Peculiarities of preparation and main optical properties of zinctetratiogallate films","authors":"N. Popovich, I. É. Kacher, N. Dovgoshej, Yu. Tomashpolskij","doi":"10.1117/12.368402","DOIUrl":"https://doi.org/10.1117/12.368402","url":null,"abstract":"The given results of investigation are dealing with optical properties of zinctetratiogallate films, the influence of thermoprocessing and natural aging on them. It is demonstrated that transmission region of these films is 0.3- 25 mcm, the index of refraction increases to n equals 2.33 and band gap width is Eg equals 3.7 eV. In consequence of thermoprocessing at 473 K, the index of refraction increases to 2.40. The optimum technological conditions of films preparation by the method of pulse laser sputtering and quasiequilibrium evaporation are determined.","PeriodicalId":276773,"journal":{"name":"Material Science and Material Properties for Infrared Optics","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-11-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121516663","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Temperature stability of the IBM-formed CdxHg1-xTe p-n structure ibm形成CdxHg1-xTe p-n结构的温度稳定性
Material Science and Material Properties for Infrared Optics Pub Date : 1999-11-04 DOI: 10.1117/12.368411
I. Izhnin
{"title":"Temperature stability of the IBM-formed CdxHg1-xTe p-n structure","authors":"I. Izhnin","doi":"10.1117/12.368411","DOIUrl":"https://doi.org/10.1117/12.368411","url":null,"abstract":"The influence of thermal annealing on electrical properties of the p-n structures formed by ion beam milling (IBM) on usually vacancy doped CdxHg1-xTe single crystals with p(77K) equals 5.8 X 1015 cm-3 was investigated. After IBM of the initial samples the n-type layers were created with the thickness about 10 (mu) and electron concentration of the mane part of n-type layers 5 X 1014 cm-3. P-n structures were annealed on air at 85, 120 and 160 degrees C during 1, 2 and 4 hours. Degradation of the p-n structure after every annealing step was estimated on changes of the Hall coefficient magnetic field dependence. It was revealed that degradation of the p- n structure took place due to progressive thickness decreasing of n-layer through Hg passing to intersites and vacancy creation. The critical temperature during technology steps is equal about 100 degrees C.","PeriodicalId":276773,"journal":{"name":"Material Science and Material Properties for Infrared Optics","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-11-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123280131","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
Cryogenic infrared multilayer filters: the origin of low-temperature shift of the pass-band edge 低温红外多层滤光片:低温移通带边缘的来源
Material Science and Material Properties for Infrared Optics Pub Date : 1999-11-04 DOI: 10.1117/12.368335
A. Belyaeva
{"title":"Cryogenic infrared multilayer filters: the origin of low-temperature shift of the pass-band edge","authors":"A. Belyaeva","doi":"10.1117/12.368335","DOIUrl":"https://doi.org/10.1117/12.368335","url":null,"abstract":"The design, manufacture and optimum performance of a cut-on IR for the 8-14 micrometers is discussed. The filter is composed of PbTe/ZnS symmetrical stacks deposited on tow sides of a ZnSe(ZnS) substrate. The refractive index of PbTe was found to 5.6 and that of ZnS 2.15. In order to obtain the required pass/stop band profile the principal filter was composed of ten basic periods. The transparent in the mean IR-range multilayer coatings are stable of thermal cycling from 300 up to 8 K with steady optical characteristics in this temperature range. The average transmittance of filters was 75 percent in the desired spectral regions and was constant in the temperature interval 300-8 K. The effect of cooling on the position of the pass band edge of the interference multilayer thin-film coating is experimentally revealed. A model is suggested which explains the origin of low- temperature shift of the pass-band edge within the scope of variation in the optical thickness of a layer with the high refractive index. The result of the carried out numerical analysis are in well agreement with the experimental data and may be used for cryocorrection of the interference IR multilayer thin-film.","PeriodicalId":276773,"journal":{"name":"Material Science and Material Properties for Infrared Optics","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-11-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131521992","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Photoelectric properties of polycrystalline layers based on halogen-doped PbTe 卤素掺杂PbTe多晶层的光电性能
Material Science and Material Properties for Infrared Optics Pub Date : 1999-11-04 DOI: 10.1117/12.368362
Robert T. Bondokov, D. Dimitrov, V. A. Moshnikov, M. F. Panov, I. V. Saunin
{"title":"Photoelectric properties of polycrystalline layers based on halogen-doped PbTe","authors":"Robert T. Bondokov, D. Dimitrov, V. A. Moshnikov, M. F. Panov, I. V. Saunin","doi":"10.1117/12.368362","DOIUrl":"https://doi.org/10.1117/12.368362","url":null,"abstract":"The preparation conditions of halogen doped (Cl,l) PbTe thin films have been studied. The influence of substrate and layer growth conditions on electrical and photoelectric properties are analyzed. The optimal regimens of growth of the initial layers are determined. Further, effective refraction coefficients of lead telluride films in dependence on the preparation methods were measured. It is estimated that the adding of halogen impurities into the charge increase the IR-sensitivity and makes possible a preparation of sensitive samples without annealing and reduces relaxation time. Besides, the data related to the interactions of a PbTe surface with an environment at room temperature testify to presence of the capture centers of a double nature.","PeriodicalId":276773,"journal":{"name":"Material Science and Material Properties for Infrared Optics","volume":"47 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-11-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133198160","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Photosensitization of CdxHg1-xTe epitaxial films by laser-induced shock wave 激光激波诱导CdxHg1-xTe外延膜光敏化研究
Material Science and Material Properties for Infrared Optics Pub Date : 1999-11-04 DOI: 10.1117/12.368398
V. Gnatyuk, B. L. Gorkovenko, O. S. Gorodnychenko, P. E. Mozol', A. Vlasenko
{"title":"Photosensitization of CdxHg1-xTe epitaxial films by laser-induced shock wave","authors":"V. Gnatyuk, B. L. Gorkovenko, O. S. Gorodnychenko, P. E. Mozol', A. Vlasenko","doi":"10.1117/12.368398","DOIUrl":"https://doi.org/10.1117/12.368398","url":null,"abstract":"An action of powerful laser pulsed irradiation on photoelectric properties of epitaxial CdxHg1-xTe films with a cellular structure is studied. An increase in the photosensitivity of the investigated samples is attributed to the gettering and redistribution of electrically active point defects into crystal. Using the calculations of the temperature of the samples, the depth of chock wave formation and the shock wave pressure, one is shown that the shock wave, induced by nanosecond purposes of laser radiation in phenomena taking place plays the greatest role. It is confirmed by data obtained from original experiments especially carried out.","PeriodicalId":276773,"journal":{"name":"Material Science and Material Properties for Infrared Optics","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-11-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133582343","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Thermal stress minimization in optical components coated with Ge-As-Se films Ge-As-Se薄膜涂层光学元件的热应力最小化
Material Science and Material Properties for Infrared Optics Pub Date : 1999-11-04 DOI: 10.1117/12.368386
N. Savchenko
{"title":"Thermal stress minimization in optical components coated with Ge-As-Se films","authors":"N. Savchenko","doi":"10.1117/12.368386","DOIUrl":"https://doi.org/10.1117/12.368386","url":null,"abstract":"Shear moduli for (As2Se3)1- yGey(0<EQy<EQ0.3)), (As2Se3)1- y(Ge2Se3)y (0<EQy<EQv1) glasses have been calculated by the linear combination of atomic orbitals method. Linear thermal expansion coefficients for As2Se3$, (As(subscript 2Se3)0.9Ge0.1, (As2Se3)0.7Ge0.3 and Ge33As12Se55 films have been derived from thermal stress measurements. Correlation between theoretical and experimental thermal stress values for amorphous films has been made. The availability of the total stress minimization in multilayer structures based on the films under consideration has been shown.","PeriodicalId":276773,"journal":{"name":"Material Science and Material Properties for Infrared Optics","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-11-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130177097","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
New film materials for optoelectronics based on CdAl(Ga)2S(Se)4 compounds 基于CdAl(Ga)2S(Se)4化合物的新型光电子薄膜材料
Material Science and Material Properties for Infrared Optics Pub Date : 1999-11-04 DOI: 10.1117/12.368342
M. I. Dovgoshey, L. M. Durdinets, I. É. Kacher, J. V. Likhach, M. Y. Rygan
{"title":"New film materials for optoelectronics based on CdAl(Ga)2S(Se)4 compounds","authors":"M. I. Dovgoshey, L. M. Durdinets, I. É. Kacher, J. V. Likhach, M. Y. Rygan","doi":"10.1117/12.368342","DOIUrl":"https://doi.org/10.1117/12.368342","url":null,"abstract":"Thin layers were prepared by quasi-balanced evaporation of stoichiometric polycrystalline CdAl(Ga)2S(Se)4 powder of form the Knudsen cells in vacuum deposition plant VUP-5M. The effect of substrate temperature and evaporation conditions on the composition of these compounds has been studied. Diagrams of stoichiometric composition, stoichiometric and critical condensation temperatures for these compounds were determined.","PeriodicalId":276773,"journal":{"name":"Material Science and Material Properties for Infrared Optics","volume":"231 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-11-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134415250","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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