基于CdAl(Ga)2S(Se)4化合物的新型光电子薄膜材料

Material Science and Material Properties for Infrared Optics Pub Date : 1999-11-04 DOI:10.1117/12.368342

M. I. Dovgoshey, L. M. Durdinets, I. É. Kacher, J. V. Likhach, M. Y. Rygan

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引用次数: 0

摘要

在真空沉积装置VUP-5M中，对Knudsen电池制备的CdAl(Ga)2S(Se)4多晶化学计量粉末进行准平衡蒸发制备薄层。研究了衬底温度和蒸发条件对这些化合物组成的影响。测定了这些化合物的化学计量组成图、化学计量图和临界缩合温度图。

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New film materials for optoelectronics based on CdAl(Ga)2S(Se)4 compounds

Thin layers were prepared by quasi-balanced evaporation of stoichiometric polycrystalline CdAl(Ga)2S(Se)4 powder of form the Knudsen cells in vacuum deposition plant VUP-5M. The effect of substrate temperature and evaporation conditions on the composition of these compounds has been studied. Diagrams of stoichiometric composition, stoichiometric and critical condensation temperatures for these compounds were determined.

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Material Science and Material Properties for Infrared Optics

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