New film materials for optoelectronics based on CdAl(Ga)2S(Se)4 compounds

Abstract

Thin layers were prepared by quasi-balanced evaporation of stoichiometric polycrystalline CdAl(Ga)2S(Se)4 powder of form the Knudsen cells in vacuum deposition plant VUP-5M. The effect of substrate temperature and evaporation conditions on the composition of these compounds has been studied. Diagrams of stoichiometric composition, stoichiometric and critical condensation temperatures for these compounds were determined.