Photoelectric properties of polycrystalline layers based on halogen-doped PbTe

The preparation conditions of halogen doped (Cl,l) PbTe thin films have been studied. The influence of substrate and layer growth conditions on electrical and photoelectric properties are analyzed. The optimal regimens of growth of the initial layers are determined. Further, effective refraction coefficients of lead telluride films in dependence on the preparation methods were measured. It is estimated that the adding of halogen impurities into the charge increase the IR-sensitivity and makes possible a preparation of sensitive samples without annealing and reduces relaxation time. Besides, the data related to the interactions of a PbTe surface with an environment at room temperature testify to presence of the capture centers of a double nature.