N. Popovich, I. É. Kacher, N. Dovgoshej, Yu. Tomashpolskij
{"title":"Peculiarities of preparation and main optical properties of zinctetratiogallate films","authors":"N. Popovich, I. É. Kacher, N. Dovgoshej, Yu. Tomashpolskij","doi":"10.1117/12.368402","DOIUrl":null,"url":null,"abstract":"The given results of investigation are dealing with optical properties of zinctetratiogallate films, the influence of thermoprocessing and natural aging on them. It is demonstrated that transmission region of these films is 0.3- 25 mcm, the index of refraction increases to n equals 2.33 and band gap width is Eg equals 3.7 eV. In consequence of thermoprocessing at 473 K, the index of refraction increases to 2.40. The optimum technological conditions of films preparation by the method of pulse laser sputtering and quasiequilibrium evaporation are determined.","PeriodicalId":276773,"journal":{"name":"Material Science and Material Properties for Infrared Optics","volume":"19 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1999-11-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Material Science and Material Properties for Infrared Optics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1117/12.368402","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
The given results of investigation are dealing with optical properties of zinctetratiogallate films, the influence of thermoprocessing and natural aging on them. It is demonstrated that transmission region of these films is 0.3- 25 mcm, the index of refraction increases to n equals 2.33 and band gap width is Eg equals 3.7 eV. In consequence of thermoprocessing at 473 K, the index of refraction increases to 2.40. The optimum technological conditions of films preparation by the method of pulse laser sputtering and quasiequilibrium evaporation are determined.